Abdullah Yesil

A new DDCC based memristor emulator circuit and its applications

Memristor is a new passive circuit element. The interaction of the memristor with other circuit elements is important for designers. In this paper, new memristor emulator circuit is designed using DDCC (differential difference current conveyor) based on CMOS. It is realized that the proposed emulator causes less complexity compared to other designed emulator circuits. Compatibility of memristor with CMOSs and its operation ability at high frequencies are very important for circuit design based on memristor. The emulator based on CMOS can manage to provide these two fundamental properties successfully. In order to test the proposed emulator, it is connected to memristor with both ways, serial and parallel, than MC circuit is analyzed and results are shown at the end of the paper.

Novel grounded parallel inductance simulators realization using a minimum number of active and passive components

In this paper novel lossless and lossy grounded parallel inductance simulators are reported. All grounded inductor simulator circuits employing only a single DXCCII and three passive components are proposed. The proposed topologies realized all grounded parallel inductance variations. To demonstrate the performance of the presented DXCCII based parallel inductance simulators, we used one of the circuits to construct a third order high-pass filter, a voltage-mode band-pass filter and LC oscillator. Simulation results are given to confirm the theoretical analysis. The proposed DXCCII and its applications are simulated using CMOS 0.35@mm technology.

FDCCII-based electronically tunable voltage-mode biquad filter

In this work, a voltage-mode biquad filter realizing low-pass, band-pass and high-pass characteristics is presented. The proposed filter, which employs two FDCCIIs, two grounded capacitors and two NMOS transistors, provides electronic tunability with the control voltage applied to the gate. NMOS transistors act as linear resistor. Furthermore, the proposed circuit still enjoys realization using a low number of active and passive components, no requirement with the component choice conditions to realize specific filtering functions, high input impedance, and low active and passive sensitivities performance. Simulation results using SPICE program are given to show the performance of the filter and verify the theory. Copyright

FDCCII-based FDNR simulator topologies

In this article, three new circuits for realising frequency-dependent negative resistance (FDNR) are proposed. All proposed circuits employ a single fully differential current conveyor, grounded capacitors and resistor. Proposed circuits consist of minimum number of passive and active elements. All proposed circuits are lossless FDNR. The performance of the proposed FDNR is demonstrated on the third-order Butterworth low-pass filter. Simulation results are included to verify the theory.

Design and Experimental Evaluation of Quadrature Oscillator Employing Single FB–VDBA

Abstract This paper presents an attractive and a new voltage-mode quadrature oscillator using a single Fully Balanced-Voltage Differencing Buffer Amplifier (FB-VDBA) as the active element. The circuit structure is very simple, consisting of merely one FB-VDBA, one resistor and two capacitors. The circuit is implemented using the commonly available OPA860 which results in low output impedance and high current drive capability. The proposed circuit also has a suitable architecture for IC production. Experimental results which are matched well with the theoretical assumptions are given.

A New Method for Increasing Quality Factor in Active Filters

In this paper, we present a new method increasing quality factor of active filter structure in the literature and a new designed filter. The new method is easily applied to all different filter modes with the proper feedback circuit. The center frequency of the filter remains constant as quality factor of filter increases. Also, quality factor can be also tuned electronically by changing the biasing current of the feedback circuit. Furthermore, the performance of the method is demonstrated by CMOS simulation of differential voltage current conveyor and transconductance amplifier. Quality factor value of the filter can also be easily adjusted electronically between 1 and 20 with the presented method. Finally, an application example of the presented method is presented for double tuned amplifier for intermediate frequency pre-amplifier of FM receiver.

VDBA-based lossless and lossy inductance simulators and its filter applications

In this conference paper, the voltage differencing buffered amplifier (VDBA) based three different grounded inductance simulators are proposed. The proposed circuits are lossless inductance simulator, serial R-L and parallel R-L inductance simulators. The proposed inductance simulators are employed single active element and two or three passive components. To test performance of the inductance simulators, current mode parallel RLC and voltage mode bandpass filters are used. The simulation results agree quite well with theoretical analysis.

High-order realisation of MOSFET-only band-pass filters for RF applications.

The authors present two new metal oxide semiconductor field effect transistor (MOSFET)-only second-order voltage and transadmittance-mode band-pass filters (BPFs) employing only five transistors without using any passive elements such as a resistor, a capacitor, and an inductor. As a result, both proposed circuits possess low-power consumption and occupy small chip area. The first proposed filter enjoys low output impedance and offset cancellation for voltage-mode operation while the second proposed filter has low supply voltage. The centre frequency of both proposed filters can be electronically tuned by varying biasing voltage. To demonstrate the performance of the proposed filters, effects of output transconductance of transistors have been investigated and equations of input referred noise have been obtained. Furthermore, fourth-order voltage and transadmittance-mode BPF which is derived the first proposed filter is presented and its simulation results are given. All proposed filters are laid-out in the Cadence environment using Taiwan semiconductor manufacturing company (TSMC) 0.18 μm complementary metal oxide semiconductor (CMOS) technology parameters. The required chip area of the fourth-order voltage and transadmittance-mode band-pass filter is 1100 μm 2 and the power consumption is about 436 μW.