Adam W. Welch

CuSbSe2 photovoltaic devices with 3% efficiency

Recent technical and commercial successes of existing thin film solar cell technologies motivates exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds like CuSbSe

Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications

_2

Comparison of Cu 2 SnS 3 and CuSbS 2 as potential solar cell absorbers

, which do not have the conventional tetrahedral semiconductor bonding. Here, we demonstrate 1.5 {\mu}m thick CuSbSe

Conduction band position tuning and Ga-doping in (Cd,Zn)S alloy thin films

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Thermal treatment improvement of CuSbS2 absorbers

PV prototypes prepared at 380-410°C by a self-regulated sputtering process using the conventional substrate device architecture. The p-type CuSbSe

Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2

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Copper antimony chalcogenide thin film PV device development

absorber has a 1.1 eV optical absorption onset, ~

Self-Regulated Growth and Tunable Properties of CuSbS2 Solar Absorbers

10^{5}

Accelerated development of CuSbS2 thin film photovoltaic device prototypes

cm

Effects of Thermochemical Treatment on CuSbS2 Photovoltaic Absorber Quality and Solar Cell Reproducibility

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