Ahmad Al-Jabr

A General ADE-FDTD Algorithm for the Simulation of Dispersive Structures

A finite-difference time-domain general algorithm, based on the auxiliary differential equation (ADE) technique, for the analysis of dispersive structures is presented. The algorithm is suited for cases where materials having different types of dispersion are modeled together. While having the same level of accuracy, the proposed algorithm finds its strength in unifying the formulation of different dispersion models into one form. Consequently, savings in both memory and computational requirements, compared to other ADE-based methods that model each dispersion type separately, are possible. The algorithm is applied in the simulation of surface plasmon polaritons using the multipole Lorentz-Drude dispersion model of silver.

Analysis of CMOS Compatible Cu-Based TM-Pass Optical Polarizer

A transverse-magnetic-pass (TM-pass) optical polarizer based on Cu complementary metal-oxide-semiconductor technology platform is proposed and analyzed using the 2-D method-of-lines numerical model. In designing the optimum configuration for the polarizer, it was found that the metal-insulator-metal (MIM) polarizer structure is superior compared to the insulator-metal-insulator polarizer structure due to its higher polarization extinction ratio (PER) and low insertion loss. An optimized MIM TM-pass polarizer exhibits simulated long wavelength pass filter characteristics of >;~1.2 μ.m, with fundamental TM0 and TE0 mode transmissivity of >;70% and <;5%, respectively, and with PER ~11.5 dB in the wavelength range of 1.2-1.6 μ.m. The subwavelength and submicrometer features of this TM-polarizer are potentially suitable for compact and low power photonics integrated circuit implementation on silicon-based substrates.

A Simple FDTD Algorithm for Simulating EM-Wave Propagation in General Dispersive Anisotropic Material

In this paper, an finite-difference time-domain (FDTD) algorithm for simulating propagation of EM waves in anisotropic material is presented. The algorithm is based on the auxiliary differential equation and the general polarization formulation. In anisotropic materials, electric fields are coupled and elements in the permittivity tensor are, in general, multiterm dispersive. The presented algorithm resolves the field coupling using a formulation based on electric polarizations. It also offers a simple procedure for the treatment of multiterm dispersion in the FDTD scheme. The algorithm is tested by simulating wave propagation in 1-D magnetized plasma showing excellent agreement with analytical solutions. Extension of the algorithm to multidimensional structures is straightforward. The presented algorithm is efficient and simple compared to other algorithms found in the literature.

Large bandgap blueshifts in the InGaP/InAlGaP laser structure using novel strain-induced quantum well intermixing

We report on a novel quantum well intermixing (QWI) technique that induces a large degree of bandgap blueshift in the InGaP/InAlGaP laser structure. In this technique, high external compressive strain induced by a thick layer of SiO2 cap with a thickness ≥1 μm was used to enhance QWI in the tensile-strained InGaP/InAlGaP quantum well layer. A bandgap blueshift as large as 200 meV was observed in samples capped with 1-μm SiO2 and annealed at 1000 °C for 120 s. To further enhance the degree of QWI, cycles of annealing steps were applied to the SiO2 cap. Using this method, wavelength tunability over the range of 640 nm to 565 nm (∼250 meV) was demonstrated. Light-emitting diodes emitting at red (628 nm), orange (602 nm), and yellow (585 nm) wavelengths were successfully fabricated on the intermixed samples. Our results show that this new QWI method technique may pave the way for the realization of high-efficiency orange and yellow light-emitting devices based on the InGaP/InAlGaP material system.

Effective antireflection properties of porous silicon nanowires for photovoltaic applications

Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of <;5% span over wavelength 250 nm to 1050 nm has been measured. The finite-difference time-domain (FDTD) method has been employed to model the optical reflectance for both Si wafer and PSiNWs. Our calculation results are in agreement with the measured reflectance from nanowires length of 6 μm and 60% porosity. The low reflectance is attributed to the effective graded index of PSiNWs and enhancement of multiple optical scattering from the pores and nanowires. PSiNW structures with low surface reflectance can potentially serve as an antireflection layer for Sibased photovoltaic devices.

First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode.

Achieving Room Temperature Orange Lasing Using InGaP/InAlGaP Diode Laser

We demonstrated the first orange laser diode at room temperature with a decent total output power of ~46mW and lasing wavelength of 608nm, using a novel strain-induced quantum well intermixing in InGaP/InAlGaP red laser structure.

Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

Abstract. We achieved considerable laser diode (LD) improvement after annealing InGaP/InAlGaP laser structure at 950°C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from ∼30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (Ith), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (ηi), from 63% to 68%, and increased internal losses αi, from 14.3 to 18.6  cm−1. Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs.

An FDTD algorithm for simulating light propagation in anisotropic dynamic gain media

Simulating light propagation in anisotropic dynamic gain media such as semiconductors and solid-state lasers using the finite difference time-domain FDTD technique is a tedious process, as many variables need to be evaluated in the same instant of time. The algorithm has to take care of the laser dynamic gain, rate equations, anisotropy and dispersion. In this paper, to the best of our knowledge, we present the first algorithm that solves this problem. The algorithm is based on separating calculations into independent layers and hence solving each problem in a layer of calculations. The anisotropic gain medium is presented and tested using a one-dimensional set-up. The algorithm is then used for the analysis of a two-dimensional problem.

An FDTD algorithm for simulation of EM waves propagation in laser with static and dynamic gain models

This paper presents methods of simulating gain media in the finite difference time-domain (FDTD) algorithm utilizing a generalized polarization formulation. The gain can be static or dynamic. For static gain, Lorentzian and non-Lorentzian models are presented and tested. For the dynamic gain, rate equations for two-level and four-level models are incorporated in the FDTD scheme. The simulation results conform with the expected behavior of wave amplification and dynamic population inversion.