Ahmed Ben Slimane

Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

We report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been observed from PSiNW samples etched using the optimum hydrofluoric acid (HF) concentration. The strongest photoluminescence (PL) signal has been measured from samples etched with 4.8 M of HF, beyond which a significant decreasing in PL emission intensity has been observed. A qualitative model is proposed for the formation of PSiNWs in the presence of Ag catalyst. This model affirms our observations in PL enhancement for samples etched using HF < 4.8 M and the eventual PL reduction for samples etched beyond 4.8 M of HF concentration. The enhancement in PL signals has been associated to the formation of PSiNWs and the quantum confinement effect in the Si nanocrystallites. Compared to PSiNWs without Si-Ox, the HF treated samples exhibited significant blue PL peak shift of 1...

On the phenomenon of large photoluminescence red shift in GaN nanoparticles

We report on the observation of broad photoluminescence wavelength tunability from n-type gallium nitride nanoparticles (GaN NPs) fabricated using the ultraviolet metal-assisted electroless etching method. Transmission and scanning electron microscopy measurements performed on the nanoparticles revealed large size dispersion ranging from 10 to 100 nm. Nanoparticles with broad tunable emission wavelength from 362 to 440 nm have been achieved by exciting the samples using the excitation power-dependent method. We attribute this large wavelength tunability to the localized potential fluctuations present within the GaN matrix and to vacancy-related surface states. Our results show that GaN NPs fabricated using this technique are promising for tunable-color-temperature white light-emitting diode applications.

Red to Near-Infrared Emission from InGaN/GaN Quantum-Disks-in-Nanowires LED

The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ∼830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.

A possible approach on optical analogues of gravitational attractors

In this paper we report on the feasibility of light confinement in orbital geodesics on stationary, planar, and centro-symmetric refractive index mappings. Constrained to fabrication and [meta]material limitations, the refractive index, n, has been bounded to the range: 0.8 ≤ n(r[combining arrow]) ≤ 3.5. Mappings are obtained through the inverse problem to the light geodesics equations, considering trappings by generalized orbit conditions defined a priori. Our simulation results show that the above mentioned refractive index distributions trap light in an open orbit manifold, both perennial and temporal, in regards to initial conditions. Moreover, due to their characteristics, these mappings could be advantageous to optical computing and telecommunications, for example, providing an on-demand time delay or optical memories. Furthermore, beyond their practical applications to photonics, these mappings set forth an attractive realm to construct a panoply of celestial mechanics analogies and experiments in the laboratory.

Generation of J 0 -Bessel-Gauss beam by a heterogeneous refractive index map

In this paper, we present the theoretical studies of a refractive index map to implement a Gauss to a J(0)-Bessel-Gauss convertor. We theoretically demonstrate the viability of a device that could be fabricated on a Si/Si(1-y)O(y)/Si(1-x-y)Ge(x)C(y) platform or by photo-refractive media. The proposed device is 200 μm in length and 25 μm in width, and its refractive index varies in controllable steps across the light propagation and transversal directions. The computed conversion efficiency and loss are 90%, and -0.457 dB, respectively. The theoretical results, obtained from the beam conversion efficiency, self-regeneration, and propagation through an opaque obstruction, demonstrate that a two-dimensional (2D) graded index map of the refractive index can be used to transform a Gauss beam into a J(0)-Bessel-Gauss beam. To the best of our knowledge, this is the first demonstration of such beam transformation by means of a 2D index-mapping that is fully integrable in silicon photonics based planar lightwave circuits (PLCs). The concept device is significant for the eventual development of a new array of technologies, such as micro optical tweezers, optical traps, beam reshaping and nonlinear beam diode lasers.

Effective antireflection properties of porous silicon nanowires for photovoltaic applications

Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of <;5% span over wavelength 250 nm to 1050 nm has been measured. The finite-difference time-domain (FDTD) method has been employed to model the optical reflectance for both Si wafer and PSiNWs. Our calculation results are in agreement with the measured reflectance from nanowires length of 6 μm and 60% porosity. The low reflectance is attributed to the effective graded index of PSiNWs and enhancement of multiple optical scattering from the pores and nanowires. PSiNW structures with low surface reflectance can potentially serve as an antireflection layer for Sibased photovoltaic devices.