Ahrum Sohn

Transparent Flexible Graphene Triboelectric Nanogenerators

S. Kim, Dr. M. K. Gupta, K. Y. Lee, K.-S. Shin, S. K. Kim, K. H. Lee, Prof. S.-W. Kim School of Advanced Materials Science and Engineering Sungkyunkwan University (SKKU) Suwon 440–746 , Republic of Korea E-mail: kimsw1@skku.edu A. Sohn, Prof. D.-W. Kim School of Department of Physics Ewha Womens University Seoul 120–750 , Republic of Korea T. Y. Kim, D. Kim, Prof. S.-W. Kim SKKU Advanced Institute of Nanotechnology (SAINT) Center for Human Interface Nanotechnology (HINT) SKKU-Samsung Graphene Center Sungkyunkwan University (SKKU) Suwon 440–746 , Republic of Korea Dr. H.-J. Shin Samsung Advanced Institute of Technology Yongin 446–712 , Republic of Korea

Evolution of local work function in epitaxial VO2 thin films spanning the metal-insulator transition

Transport and Kelvin probe force microscopy measurements were simultaneously conducted on epitaxial VO2 thin films. The samples work function abruptly dropped from 4.88 eV to 4.70 eV during heating from 333 K to 353 K, suggesting a significant change in its electronic band structure spanning the metal insulator transition. The work function showed nearly no statistical deviation across the films surface during the transition, likely due to band bending at the boundaries of the small domains. Resistance profiles confirmed that the local work function corresponded closely to the resistance of the corresponding area.

Plasmonic coupling in three-dimensional Au nanoparticle assemblies fabricated by anodic aluminum oxide templates

We investigated optical properties of three-dimensional (3D) assemblies of Au nanoparticles (NPs), which were fabricated by dewetting of thin Au layers on anodic aluminum oxides (AAO). The NP assembly had hexagonal array of repeated multiparticle structures, which consisted of six trimers on the AAO surface and one large NP in the AAO pore (pore-NP). We performed finite difference time-domain simulation to explain the optical response of the NP assemblies and compared the calculation results with experimental data. Such complementary studies clearly revealed how the plasmonic coupling between the constituent NPs influenced the spectral response of our NP assemblies. In particular, comparison of the assemblies with and without pore-NPs suggested that strong plasmonic coupling between trimers and pore-NP significantly affected the spectra and the field distribution of the NP assemblies. Plasmonic multi-NP assemblies could provide us new platforms to realize novel optoelectronic devices.

Fractal Nature of Metallic and Insulating Domain Configurations in a VO2 Thin Film Revealed by Kelvin Probe Force Microscopy

We investigated the surface work function (WS) and its spatial distribution for epitaxial VO2/TiO2 thin films using Kelvin probe force microscopy (KPFM). Nearly grain-boundary-free samples allowed observation of metallic and insulating domains with distinct WS values, throughout the metal–insulator transition. The metallic fraction, estimated from WS maps, describes the evolution of the resistance based on a two-dimensional percolation model. The KPFM measurements also revealed the fractal nature of the domain configuration.

Mie Resonance-Modulated Spatial Distributions of Photogenerated Carriers in Poly(3-hexylthiophene-2,5-diyl)/Silicon Nanopillars

Organic/silicon hybrid solar cells have great potential as low-cost, high-efficiency photovoltaic devices. The superior light trapping capability, mediated by the optical resonances, of the organic/silicon hybrid nanostructure-based cells enhances their optical performance. In this work, we fabricated Si nanopillar (NP) arrays coated with organic semiconductor, poly(3-hexylthiophene-2,5-diyl), layers. Experimental and calculated optical properties of the samples showed that Mie-resonance strongly concentrated incoming light in the NPs. Spatial mapping of surface photovoltage, i.e., changes in the surface potential under illumination, using Kelvin probe force microscopy enabled us to visualize the local behavior of the photogenerated carriers in our samples. Under red light, surface photovoltage was much larger (63 meV) on the top surface of a NP than on a planar sample (13 meV), which demonstrated that the confined light in the NPs produced numerous carriers within the NPs. Since the silicon NPs provide pathways for efficient carrier transportation, high collection probability of the photogenerated carriers near the NPs can be expected. This suggests that the optical resonance in organic/silicon hybrid nanostructures benefits not only broad-band light trapping but also efficient carrier collection.

Photoheat-induced Schottky nanojunction and indirect Mott transition in VO2: photocurrent analysis

In order to elucidate a mechanism of the insulator-to-metal transition (IMT) for a Mott insulator VO2 (3d(1)), we present Schottky nanojunctions and the structural phase transition (SPT) by simultaneous nanolevel measurements of photocurrent and Raman scattering in microlevel devices. The Schottky nanojunction with the monoclinic metallic phase between the monoclinic insulating phases is formed by the photoheat-induced IMT not accompanied with the SPT. The temperature dependence of the Schottky junction reveals that the Mott insulator has an electronic structure of an indirect subband between the main Hubbard d bands. The IMT as reverse process of the Mott transition occurs by temperature-induced excitation of bound charges in the indirect semiconductor band, most likely formed by impurities such as oxygen deficiency. The metal band (3d(1)) for the Mott insulator is screened (trapped) by the indirect band (impurities).

Optical and electrical properties of Cu-based all oxide semi-transparent photodetector

Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu2O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu2O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route of high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.

Plasmon-Enhanced Surface Photovoltage of ZnO/Ag Nanogratings.

We investigated the surface photovoltage (SPV) behaviors of ZnO/Ag one-dimensional (1D) nanogratings using Kelvin probe force microscopy (KPFM). The grating structure could couple surface plasmon polaritons (SPPs) with photons, giving rise to strong light confinement at the ZnO/Ag interface. The larger field produced more photo-excited carriers and increased the SPV. SPP excitation influenced the spatial distribution of the photo-excited carriers and their recombination processes. As a result, the SPV relaxation time clearly depended on the wavelength and polarization of the incident light. All of these results suggested that SPV measurement using KPFM should be very useful for studying the plasmonic effects in nanoscale metal/semiconductor hybrid structures.

Influence of Gas Adsorption and Gold Nanoparticles on the Electrical Properties of CVD-Grown MoS2 Thin Films

Molybdenum disulfide (MoS2) has increasingly attracted attention from researchers and is now one of the most intensively explored atomic-layered two-dimensional semiconductors. Control of the carrier concentration and doping type of MoS2 is crucial for its application in electronic and optoelectronic devices. Because the MoS2 layers are atomically thin, their transport characteristics may be very sensitive to ambient gas adsorption and the resulting charge transfer. We investigated the influence of the ambient gas (N2, H2/N2, and O2) choice on the resistance (R) and surface work function (WF) of trilayer MoS2 thin films grown via chemical vapor deposition. We also studied the electrical properties of gold (Au)-nanoparticle (NP)-coated MoS2 thin films; their R value was found to be 2 orders of magnitude smaller than that for bare samples. While the WF largely varied for each gas, R was almost invariant for both the bare and Au-NP-coated samples regardless of which gas was used. Temperature-dependent transport suggests that variable range hopping is the dominant mechanism for electrical conduction for bare and Au-NP-coated MoS2 thin films. The charges transferred from the gas adsorbates might be insufficient to induce measurable R change and/or be trapped in the defect states. The smaller WF and larger localization length of the Au-NP-coated sample, compared with the bare sample, suggest that more carriers and less defects enhanced conduction in MoS2.

Visualization of local phase transition behaviors near dislocations in epitaxial VO2/TiO2 thin films

We investigated local phase transition behaviors in epitaxial VO2/TiO2 thin films using variable-temperature Kelvin probe force microscopy while spanning the metal–insulator transition (MIT). Fully strained thin films were almost free of grain boundaries. In contrast, thicker films had cracks (dislocations) caused by strain relaxation. The surface area fraction of the insulating phase near the dislocations was higher than that in other regions. Thicker films have complicated domain patterns; hence, the three-dimensional percolation model properly described the MIT behaviors. In contrast, the two-dimensional percolation model well explained the transition behaviors of uniformly strained thinner films.