Akihiko Namba

A novel temperature compensation method for SAW devices using direct bonding techniques

We have developed a novel temperature compensation method for SAW devices using a direct bonding technique. The SAW device applied this method was composed of a conventional piezoelectric substrate such as LiTaO/sub 3/ and LiNbO/sub 3/, directly bonded without any bonding agents to a glass substrate having a relatively low thermal expansion coefficient (TEC). The piezoelectric substrate and the glass substrate were bonded in an atomic scale and the interface was very uniform. Therefore, the thermal strain at the surface of the bonded substrate caused by the difference between the TECs of the substrates was quite uniform and stable. With this structure, the thermal expansion of the piezoelectric substrate was restrained and the elastic constant of the piezoelectric substrate was changed by the thermal strain. Using this technique, we have succeeded to improve the temperature coefficient of frequency (TCF) of the SAW devices without causing any deterioration in the frequency response. This novel temperature compensation method is very promising for RF-SAW device applications.

Direct bonding of piezoelectric crystal onto silicon

A method for bonding a piezoelectric crystal directly onto silicon, without any bonding agents, is reported. The interface microstructure, procedures of fabricating a lithium tantalate (LiTaO3■‐ on‐silicon resonator, and its resonant characteristics are described. This technique is very promising for miniaturizing electroacoustic integrated devices.