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Featured researches published by Tetsuyosi Ogura.


internaltional ultrasonics symposium | 1997

A novel temperature compensation method for SAW devices using direct bonding techniques

Keiji Onishi; Akihiko Namba; Hiroki Sato; Tetsuyosi Ogura; Shunichi Seki; Yutaka Taguchi; Yosihiro Tomita; Osamu Kawasaki; Kazuo Eda

We have developed a novel temperature compensation method for SAW devices using a direct bonding technique. The SAW device applied this method was composed of a conventional piezoelectric substrate such as LiTaO/sub 3/ and LiNbO/sub 3/, directly bonded without any bonding agents to a glass substrate having a relatively low thermal expansion coefficient (TEC). The piezoelectric substrate and the glass substrate were bonded in an atomic scale and the interface was very uniform. Therefore, the thermal strain at the surface of the bonded substrate caused by the difference between the TECs of the substrates was quite uniform and stable. With this structure, the thermal expansion of the piezoelectric substrate was restrained and the elastic constant of the piezoelectric substrate was changed by the thermal strain. Using this technique, we have succeeded to improve the temperature coefficient of frequency (TCF) of the SAW devices without causing any deterioration in the frequency response. This novel temperature compensation method is very promising for RF-SAW device applications.


internaltional ultrasonics symposium | 1996

Shock sensors using direct bonding of LiNbO/sub 3/ crystals

T. Ohtsuchi; Masato Sugimoto; Tetsuyosi Ogura; Yosihiro Tomita; Osamu Kawasaki; Kazuo Eda

We have developed a shock sensor made with a bimorph type cantilever using by a technique of directly bonding piezoelectric single crystals. The cantilevers polarization-inverted structure was achieved by directly bonding LiNbO/sub 3/ single-crystal wafers having reverse polarization. This technique did not require any bonding agent. The basic characteristics of the shock sensor were evaluated. The resonance frequency of the cantilever having a length of 2 mm was 20 kHz. The sensor made from 140/spl deg/ rotated Y cut LiNbO/sub 3/ wafers had a high sensitivity of 6.4 mV/G, and excellent linearity.


Archive | 1998

Surface acoustic wave devices and their manufacturing method

Yutaka Taguchi; Kazuo Eda; Osamu Kawasaki; Yosihiro Tomita; Keiji Onishi; Shunichi Seki; Akihiko Namba; Hiroki Sato; Tetsuyosi Ogura


Archive | 2003

Semiconductor built-in millimeter-wave band module

Hideki Iwaki; Yutaka Taguchi; Tetsuyosi Ogura; Yasuhiro Sugaya; Toshiyuki Asahi; Tousaku Nishiyama; Yoshinobu Idogawa


Archive | 1999

Electric circuit and package for semiconductor

Tetsuyosi Ogura; Yukihiro Fukumoto; Hideki Iwaki; Yutaka Taguchi; Yoshihiro Bessho


Archive | 2003

Eingebautes Halbleitermodul im Millimeterwellenband

Toshiyuki Asahi; Yoshinobu Idogawa; Hideki Iwaki; Tousaku Nishiyama; Tetsuyosi Ogura; Yasuhiro Sugaya; Yutaka Taguchi


Archive | 2003

Eingebautes Halbleitermodul im Millimeterwellenband Built semiconductor module in the millimeter waveband

Hideki Iwaki; Yutaka Taguchi; Tetsuyosi Ogura; Yasuhiro Sugaya; Toshiyuki Asahi; Tousaku Nishiyama; Yoshinobu Idogawa


Archive | 2003

Built semiconductor module in the millimeter wave band

Hideki Iwaki; Yutaka Taguchi; Tetsuyosi Ogura; Yasuhiro Sugaya; Toshiyuki Asahi; Tousaku Nishiyama; Yoshinobu Idogawa


Archive | 1996

Verfahren zur Herstellung eines Verbundsubstrats und eine dieses Substrat benutzende piezoelektrischer Anordnung A method of manufacturing a composite substrate and a substrate-use this piezoelectric assembly

Akihiko Namba; Kazuo Eda; Tetsuyosi Ogura; Yosihiro Tomita


Archive | 1996

Verfahren zur Herstellung eines Verbundsubstrats und eine dieses Substrat benutzende piezoelektrischer Anordnung

Akihiko Namba; Kazuo Eda; Tetsuyosi Ogura; Yosihiro Tomita

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