Akimasa Yuuki

Novel stacked capacitor technology for 1 Gbit DRAMs with CVD-(Ba,Sr)TiO/sub 3/ thin films on a thick storage node of Ru

Simple stacked cell capacitors for 1 Gbit DRAMs have been constructed with a thick storage node of ruthenium (Ru) and high dielectric constant CVD-(Ba,Sr)TiO/sub 3/ films of equivalent oxide thickness teq=0.50 nm with an excellent step coverage. A storage capacitance of 30 fF/cell was shown to be realized for storage nodes 0.24 /spl mu/m wide, 0.60 /spl mu/m deep, and 0.20 /spl mu/m high, with a charge loss below 19% of the initial stored charge during a pause-refresh time of 10 s in 1 Gbit DRAMs.

23.3: Characterization of 3D Image Quality on Autostereoscopic Displays — Proposal of Interocular 3D Purity —

We propose “Interocular 3D Purity”; a quantitative measure of the image quality of stereoscopic displays. This measure expresses how well stereopsis-disturbing images are excluded. We apply this measure to three types of display and find it to be effective in analyzing not only the dimensions of stereoscopic viewing spaces but also the smoothness of motion parallax.

44.3: Characterization of Motion Parallax on Multi-view/Integral-imaging Displays

Multi-view and integral imaging displays have a significant feature that allows people to induce better stereopsis due to motion parallax. Base on the analysis of the mechanism, we propose characterization methods of the displays. Our methods evaluate change in luminance of stereoscopic images when observers eye positions are displaced. The results show that our methods are good for showing smoothness of the motion parallax.