Tetsuro Makita
Mitsubishi
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Publication
Featured researches published by Tetsuro Makita.
international electron devices meeting | 1995
Akimasa Yuuki; Mikio Yamamuka; Tetsuro Makita; T. Horikawa; Teruo Shibano; N. Hirano; H. Maeda; Noboru Mikami; Kouichi Ono; H. Ogata; H. Abe
Simple stacked cell capacitors for 1 Gbit DRAMs have been constructed with a thick storage node of ruthenium (Ru) and high dielectric constant CVD-(Ba,Sr)TiO/sub 3/ films of equivalent oxide thickness teq=0.50 nm with an excellent step coverage. A storage capacitance of 30 fF/cell was shown to be realized for storage nodes 0.24 /spl mu/m wide, 0.60 /spl mu/m deep, and 0.20 /spl mu/m high, with a charge loss below 19% of the initial stored charge during a pause-refresh time of 10 s in 1 Gbit DRAMs.
Archive | 1995
Akimasa Yuuki; Takaaki Kawahara; Tetsuro Makita; Mikio Yamamuka; Koichi Ono; Tomonori Okudaira
Archive | 1997
Takaaki Kawahara; Mikio Yamamuka; Tetsuro Makita; Tsuyoshi Horikawa; Akimasa Yuuki; Teruo Shibano
Archive | 1996
T. Horikawa; Tetsuro Makita; Takeharu Kuroiwa; Noboru Mikami; Teruo Shibano
Archive | 1996
Takeharu Kuroiwa; Tsuyoshi Horikawa; Tetsuro Makita; Noboru Mikami; Teruo Shibano
Archive | 1992
Kohei Adachi; Hideaki Otsuki; Kenichi Niki; Hayato Takasago; Tetsuro Makita
Archive | 2012
Kenichi Niki; Tetsuro Makita; Hayato Takasago
Archive | 1998
Takeharu Kuroiwa; Tsuyoshi Horikawa; Noboru Mikami; Tetsuro Makita
Archive | 1997
Tsuyoshi Horikawa; Yoshikazu Tsunemine; Takeharu Kuroiwa; Tetsuro Makita; Noboru Mikami
Archive | 1993
Kenyu Haruta; Koichi Ono; Hitoshi Wakata; Mutsumi Tsuda; Yoshio Saito; Keisuke Nanba; Kazuyoshi Kojima; Tetsuya Takami; Akihiro Suzuki; Tomohiro Sasagawa; Kenichi Kuroda; Toshiyuki Oishi; Yukihiko Wada; Akihiko Furukawa; Yasuji Matsui; Akimasa Yuki; Takaaki Kawahara; Hideki Yabe; Taisuke Furukawa; Kouji Kise; Noboru Mikami; Tsuyoshi Horikawa; Tetsuro Makita; Kazuo Kuramoto; Naohiko Fujino; Hiroshi Kuroki; Tetsuo Ogama; Junji Tanimura
