Alan W. Kleinsasser

Development of superconductor electronics technology for high-end computing

This paper describes our programme to develop and demonstrate ultra-high performance single flux quantum (SFQ) VLSI technology that will enable superconducting digital processors for petaFLOPS-scale computing. In the hybrid technology, multi-threaded architecture, the computational engine to power a petaFLOPS machine at affordable power will consist of 4096 SFQ multi-chip processors, with 50 to 100 GHz clock frequency and associated cryogenic RAM. We present the superconducting technology requirements, progress to date and our plan to meet these requirements. We improved SFQ Nb VLSI by two generations, to a 8 kA cm−2, 1.25 µm junction process, incorporated new CAD tools into our methodology, demonstrated methods for recycling the bias current and data communication at speeds up to 60 Gb s−1, both on and between chips through passive transmission lines. FLUX-1 is the most ambitious project implemented in SFQ technology to date, a prototype general-purpose 8 bit microprocessor chip. We are testing the FLUX-1 chip (5K gates, 20 GHz clock) and designing a 32 bit floating-point SFQ multiplier with vector-register memory. We report correct operation of the complete stripline-connected gate library with large bias margins, as well as several larger functional units used in FLUX-1. The next stage will be an SFQ multi-processor machine. Important challenges include further reducing chip supply current and on-chip power dissipation, developing at least 64 kbit, sub-nanosecond cryogenic RAM chips, developing thermally and electrically efficient high data rate cryogenic-to-ambient input/output technology and improving Nb VLSI to increase gate density.

High performance Nb Josephson devices for petaflops computing

The Hybrid Technology Multi-Threaded (HTMT) approach to petaflops computing includes large numbers of ultra-high performance Nb Rapid Single Flux Quantum (RSFQ) processor and memory chips, making it by far the largest active superconducting electronics project in the United States. In order to achieve petaflops, RSFQ circuits with 10/sup 5/ to 10/sup 6/ junctions per chip will be required to operate at clock speeds of 50 to 100 GHz, far beyond the current state of the art. In this paper, we review the state of the art of Nb circuit fabrication and discuss the requirements for significantly improving circuit density and speed.

Digital circuits using self-shunted Nb/NbxSi1-x/Nb Josephson junctions

Superconducting digital circuits based on Josephson junctions with amorphous niobium-silicon (a-NbSi) barriers have been designed, fabricated, and tested. Single-flux-quantum (SFQ) shift registers operated with ±30% bias margins, confirming junction reproducibility and uniformity. Static digital dividers operated up to 165 GHz for a single value of bias current, which was only marginally slower than circuits fabricated with externally shunted AlOx-barrier junctions having a comparable critical current density of 4.5u2002kA/cm2. In comparison, self-shunted a-NbSi junctions enabled a doubling in circuit density. This and their relatively thick 10 nm barriers could increase the yield of complex SFQ circuits.

Fabrication of high-T/sub c/ hot-electron bolometric mixers for terahertz applications

Superconducting hot-electron bolometers (HEB) represent a promising candidate for heterodyne mixing at frequencies exceeding 1 THz. Nb HEB mixers offer performance competitive with tunnel junctions without the frequency limit imposed by the superconducting energy gap. Although the performance of YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// HEB mixers is not projected to be superior to that of Nb devices, which operate at low temperatures, they introduce the possibility of sensitive, low power heterodyne detectors operating at temperatures approaching 90 K for applications requiring portability and closed-cycle refrigeration. We report on the fabrication and characterization, both DC and RF, of high-T/sub c/ mixers based on ultra-thin (/spl les/20 nm) YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// films patterned to micrometer dimensions and incorporated into 2.5 THz planar mixer circuits.

Direct measurement of the Josephson plasma resonance frequency from I-V Characteristics

The speed of Josephson circuits such as those required for rapid single flux quantum logic is limited by the Josephson plasma frequency, /spl omega//sub p/, which (with few exceptions) increases monotonically with increasing critical current density, J/sub c/. Here we describe a new technique for directly measuring /spl omega//sub p/, using the current-voltage characteristics of a simple structure based on externally-shunted, series-connected tunnel junctions. We present both experimental and theoretical demonstrations of the technique and describe its application to the determination of the junction capacitance, a property poorly characterized for high-J/sub c/ junctions.

Low-noise and wideband hot-electron superconductive mixer for terahertz frequencies

Superconductive hot-electron bolometer (HEB) mixers have been built and tested in the frequency range from 1.1 THz to 2.5 THz. The mixer device is a 0.15 - 0.3 micrometer microbridge made from a 10 nm thick Nb film. This device employs diffusion as a cooling mechanism for hot electrons. The double sideband noise temperature was measured to be less than or equal to 3000 K at 2.5 THz and the mixer IF bandwidth is expected to be at least 10 GHz for a 0.1 micrometer long device. The local oscillator (LO) power dissipated in the HEB microbridge was 20 - 100 nW. Further improvement of the mixer characteristics can be potentially achieved by using Al microbridges. The advantages and parameters of such devices are evaluated. The HEB mixer is a primary candidate for ground based, airborne and spaceborne heterodyne instruments at THz frequencies. HEB receivers are planned for use on the NASA Stratospheric Observatory for Infrared Astronomy (SOFIA) and the ESA Far Infrared and Submillimeter Space Telescope (FIRST). The prospects of a submicron-size YBa2Cu3O7-(delta ) (YBCO) HEB are discussed. The expected LO power of 1 - 10 (mu) W and SSB noise temperature of approximately equals 2000 K may make this mixer attractive for various remote sensing applications.

Submicrometer

We have developed a low Jc (100-1000 A/cm2) submicrometer Nb integrated circuit fabrication process for SQUID-based quantum computing applications. The baseline process consists of 7 masking steps including Pd-Au resistor, Nb/Al-AlOx/Nb trilayer, two Nb wiring layers and two sputtered SiO2 dielectric layers. We have also fabricated wafers with an Nb ground plane. Using deep-UV lithography, inductively coupled plasma etch tools, and self-aligned lift-off for device definition, we routinely achieve micrometer lines and spaces with 400 nm minimum junction dimensions. Room temperature testing is used to select wafers in process and junction annealing has been calibrated for trimming current density. We will describe the process which has been used to produce circuits with over 100 junctions.

{\rm Nb}/{\rm Al}{-}{\rm AlO}_{\rm x}/{\rm Nb}

Superconductive hot-electron bolometer (HEB) mixers have been built and tested in the frequency range 1.1-2.5 THz. The mixer device is a 0.15-03 /spl mu/m microbridge made from a 10 nm thick Nb film. This device employs diffusion as a cooling mechanism for hot electrons. The double sideband noise temperature was measured to be /spl les/3000 K at 2.5 THz and the mixer IF bandwidth is /spl ap/9-10 GHz for a 0.1 /spl mu/m long device. The local oscillator (LO) power dissipated in the HEB microbridge was 20-100 nW. Further improvement of the mixer characteristics can be potentially achieved by using Al microbridges. The advantages and parameters of such devices are evaluated The HEB mixer Is a primary candidate for ground based, airborne and spaceborne heterodyne instruments at THz frequencies. HEB receivers are planned for use on the NASA Stratospheric Observatory for Infrared Astronomy (SOFIA) and the ESA Far Infrared and Submillimeter Space Telescope (FIRST). The prospects of a submicron-size YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) HEB are also discussed. The expected LO power of 1-10 /spl mu/W and SSB noise temperature of /spl ap/2000 K may make this mixer attractive for various remote sensing applications.

Integrated Circuit Fabrication Process for Quantum Computing Applications

Single flux quantum (SFQ) electronics is extremely fast and has very low on-chip power dissipation. SFQ VLSI is an excellent candidate for high-performance computing and other applications requiring extremely high-speed signal processing. Despite this, SFQ technology has generally not been accepted for system implementation. We argue that this is due, at least in part, to the use of outdated tools to produce SFQ circuits and chips. Assuming the use of tools equivalent to those employed in the semiconductor industry, we estimate the density of Josephson junctions, circuit speed, and power dissipation that could be achieved with SFQ technology. Today, CMOS lithography is at 90?65?nm with about 20 layers. Assuming equivalent technology, aggressively increasing the current density above 100?kA?cm?2 to achieve junction speeds approximately 1000?GHz, and reducing device footprints by converting device profiles from planar to vertical, one could expect to integrate about 250?M Josephson junctions cm?2 into SFQ digital circuits. This should enable circuit operation with clock frequencies above 200?GHz and place approximately 20?K gates within a radius of one clock period. As a result, complete microprocessors, including integrated memory registers, could be fabricated on a single chip.

Low-noise and wideband hot-electron superconductive mixers for THz frequencies

Room temperature junction resistance measurements are commonly used for screening Josephson-based circuits because testing is much easier than at cryogenic temperatures and can even be carried out at the wafer level. The value of ambient testing depends on the existence of a strong correspondence between the measured resistance at room temperature and the resistance and critical current obtained at the ultimate operating temperature. We have systematically studied the temperature dependence of junction resistance in order to quantify the emergence, with increasing critical current density, of parasitic contributions from non-uniform currents flowing in the Nb films, which tend to limit the value of room temperature screening. We will describe our measurements and our approach to correcting for these parasitic effects.