Aleksey Dyskin

Quasi-Isotropic X-Band Inverted-F Antenna for Active RFID Tags

An X-band (10.5 GHz) inverted-F antenna (IFA) for an active radio frequency identification (RFID) tag is presented. The antenna consists of two parts. One part comprises a driven monopole and a ground plane. The second part is a metal casing mounted on the ground plane to provide enclosed space for housing the electronics of the tag. The antenna was studied by means of both numerical simulations and measurements. The numerical simulations reveal that the radiation pattern of the antenna is quasi-isotropic. They also show that the -10-dB return loss bandwidth of the antenna is nearly 15%. This predicted antenna bandwidth value has been confirmed by experimental measurement.

Ultra wideband cascaded low noise amplifier implemented in 100-nm GaAs metamorphic-HEMT technology

We present a state-of-the-art broadband (60 to 90 GHz, 40%) 4-stage low noise amplifier (LNA) in a GaAs metamorphic high electron mobility transistor (mHEMT) technology. The LNA, spanning several waveguide bands, is dedicated to radiometry, communication and instrumentation applications. It consumes 56 mW and exhibits a gain of more than 19 dB with flat frequency response and average noise figure of 2.5 dB. The design makes use of reactive feedback by source degeneration. Broadband matching was achieved by using enhanced L-C matching networks. Gate width was optimized for best noise figure and gain performance.

Analytical Approach for SiGe HBT Static Frequency Divider Design for Millimeter-Wave Frequency Operation

This paper presents a new analytic approach for static frequency divider design. It consists of derivations of analytic expressions for the self-oscillation frequency and frequency divider oscillation condition, based on the device-level circuit parameters only. Additionally, an analytic expression for frequency divider sensitivity is obtained based on injection-locking theory. The proposed approach is verified against measurement results of a static frequency divider, fabricated in SiGe BiCMOS 0.13-

A wideband phase detector SiGe HBT MMIC for multi-gigabit synchronous receivers

\mu \text{m}

Source degeneration as series-series feedback

process. This approach enables fast preliminary frequency divider design based on time- and resource-efficient simulations.

Performance comparison for millimeter-wave single-pole double throw switches

This paper reports a phase detector MMIC operating in the frequency range of DC to 40 GHz, with an average power conversion gain of 11 dB with wideband input matching. The MMIC is realized in 0.25 μm SiGe HBT technology. The phase detector is dedicated to form a Costas loop for broadband binary phase shift keyed signals.

An asymmetrical 60–90 GHz single-pole double throw switch MMIC

Field effect transistor (FET) or bipolar junction transistor (BJT) based circuits, involving emitter/source degeneration by any general impedance are widely known for their positive effects on circuit performance. The circuits behavior like input-output impedances, trans-admittance, voltage and power gains of such topologies are well known. In this paper, we propose to analyze the topology by looking at it as a local series-series feedback. The validity of the approach is demonstrated on RF CMOS 0.18 μm TowerJazz commercial process. This method, based on the negative feedback analysis, gives an instructive insight on the advantages of using source degeneration in analog and microwave circuits.

An Active 60-90 GHz Single Pole Double Throw Switch MMIC

In this paper we present the performance comparison of different single-pole double throw (SPDT) switch topologies realized in metamorphic high electron mobility transistor (mHEMT) technology. Conventional series-series and shunt-shunt topology switches designed for 60 GHz and 94 GHz are compared to the asymmetrical topology switch designed for broadband performance from 60 to 90 GHz. Parameters like insertion loss, isolation, power matching and linearity are considered in this paper.