Alessandro Tomasino

Design and development of a fNIRS system prototype based on SiPM detectors

Functional Near Infrared Spectroscopy (fNIRS) uses near infrared sources and detectors to measure changes in absorption due to neurovascular dynamics in response to brain activation. The use of Silicon Photomultipliers (SiPMs) in a fNIRS system has been estimated potentially able to increase the spatial resolution. Dedicated SiPM sensors have been designed and fabricated by using an optimized process. Electrical and optical characterizations are presented. The design and implementation of a portable fNIRS embedded system, hosting up to 64 IR-LED sources and 128 SiPM sensors, has been carried out. The system has been based on a scalable architecture whose elementary leaf is a flexible board with 16 SiPMs and 4 couples of LEDs each operating at two wavelengths. An ARM based microcontroller has been joined with a multiplexing interface, able to control power supply for the LEDs and collect data from the SiPMs in a time-sharing fashion and with configurable temporal slots. The system will be validated by using a phantom made by materials of different scattering and absorption indices layered to mimic a human head. A preliminary characterization of the optical properties of the single material composing the phantom has been performed using the SiPM in the diffuse radial reflectance measurement technique. The first obtained results confirm the high sensitivity of such kind of detector in the detection of weak light signal even at large distance between the light source and the detector.

Silicon Photomultipliers Signal-to-Noise Ratio in the Continuous Wave Regime

We report on signal-to-noise ratio measurements carried out in the continuous wave regime, at different bias voltages, frequencies, and temperatures, on a class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal-to-noise ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the root mean square deviation of the same current. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of signal-to-noise ratio, as a function of the temperature of the SiPM package and at different bias voltages. Our results show the outstanding performance of this class of SiPMs even without the need of any cooling system.

Parametrical study of multilayer structures for CIGS solar cells

In this paper, a numerical analysis of relevant electrical parameters of multilayer structures for CIGS-based solar cells was carried out, employing the simulation software wxAMPS. In particular, we have focused on thin film cells having a ZnO:Al/ZnO/CdS/CIGS structure with a Molybdenum back contact. The aim of this work is to establish good theoretical reference values for an ongoing experimental activity, where our technology of choice is the single-step electrodeposition. In detail, we have analyzed how the main electrical properties change with the bang gap and the thickness of the absorber layer, for such a type of solar cell structure. Our results show that both efficiency and fill factor strongly depend on the energy gap. Instead, the absorber thickness plays a role up to a few microns, after which the cell parameters remain almost constant. As expected, the theoretical peak efficiency was found for a band gap value of 1.40 eV, corresponding to a Ga/(In+Ga) ratio of 0.66.

Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring

We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 μm device pitch exhibits the best results, being the best compromise in terms of full depletion and space-strip width ratio.

PPG embedded system for blood pressure monitoring

In this work, we have designed and implemented a microcontroller-based embedded system for blood pressure monitoring through a PhotoPlethysmoGraphic (PPG) technique. In our system, it is possible to perform PPG measurements via reflectance mode. Hardware novelty of our system consists in the adoption of Silicon PhotoMultiplier detectors. The signal received from the photodetector is used to calculate the instantaneous heart rate and therefore the heart rate variability. The obtained results show that, by using our system, it is possible to easily extract both the PPG and the breath signal. These signals can be used to monitor the patients during the convalescence both in hospital and at home.

Design and Implementation of a Portable fNIRS Embedded System

We report on the design, development and operation of a portable, low cost, battery-operated, multi-channel, functional Near Infrared Spectroscopy embedded system, hosting up to 64 optical sources and 128 Silicon PhotoMultiplier optical detectors. The system is realized as a scalable architecture, whose elementary leaf consists of a probe board provided with 16 SiPMs, 4 couples of bi-color LED, and a temperature sensor, built on a flexible stand. The hardware structure is very versatile because it is possible to handle both the switching time of the LED and the acquisition of the photodetectors, via an ARM based microcontroller.

Design and realization of a portable multichannel continuous wave fNIRS

A design and implementation of a portable functional Near InfraRed Spectroscopy embedded system prototype is described. In this theoretical and experimental work, we present an embedded system hosting 64 LED sources and 128 Silicon PhotoMultiplier detectors (SiPM). The elementary part of the structure is a flexible probe “leaf” consisting of 16 SiPMs, 4 couples of LEDs, each operating at two wavelengths, and a temperature sensor. The hardware system is based on an ARM main microcontroller that allows to perform both the switching time of LEDs and the acquisition of the SiPM outputs. The performed preliminary experimental tests achieved very promising results, thus demonstrating the effectiveness of our fNIRS system.

Backward frequency doubling of near infrared picosecond pulses.

We report on backward second-harmonic generation using ps laser pulses in congruent lithium niobate with 3.2 µm periodic poling. Three resonant peaks were measured between 1530 and 1730 nm, corresponding to 16th, 17th and 18th quasi-phase-matching orders in the backward configuration, with a conversion efficiency of 4.75 x 10(-5%)/W for the 16th order. We could also discriminate the contributions from inverted domains randomized in duty-cycle.

CIGS PV module characteristic curves under chemical composition and thickness variations

This paper analyzes how the electrical characteristics of a CIGS photovoltaic module are affected by the chemical composition and by the thickness variations of the CIGS absorber. The electrical characteristics here considered are the short circuit current, the open circuit voltage, the efficiency and the power peak. The chemical composition is varied by tuning the ratio between gallium and indium. This analysis has been performed by means of the wxAMPS software, developed by the University of Illinois. The above variations have been taken into account on a PV module made of 72 cells. This analysis has been carried out employing a PV module mathematical model developed and implemented by the Authors in Matlab environment.

Electrooptical Characterization of New Classes of Silicon Carbide UV Photodetectors

In this paper, we present the fabrication process steps and the characterization of 4H-SiC vertical Schottky UV detectors, where interdigitated strips, acting as top metal contacts, have been realized in Ni2Si. These devices exploit the pinch-off surface effect. I-V and C-V characteristics, as functions of temperature, were measured in dark conditions. In addition, we have carried out responsivity measurements, for wavelengths ranging from 200 to 400 nm, at varying package temperature and applied reverse bias. A comparison among devices having different strip pitch sizes has been performed, thus finding out that the 10-μm pitch class demonstrates the top performances as regards the tradeoff between exposed surface area and complete merge of adjacent depleted regions under top contacts.