Gabriele Adamo

Opals infiltrated with a stimuli-responsive hydrogel for ethanol vapor sensing

We report on a novel class of optical materials for ethanol vapor sensing, based on polystyrene opals infiltrated with an innovative stimuli-responsive hydrogel. We describe the fabrication process of the bare polystyrene opals and their subsequent infiltration. The optical characterization of the photonic crystal templates was performed to prove the good quality of the samples. Measurements on the infiltrated opals showed that the transmission spectra in the visible range strongly change at varying concentrations of ethanol vapor. The fabricated structures show a linear optical response in the visible range, for high values of ethanol concentration.

Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340-820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.

Responsivity measurements of N-on-P and P-on-N silicon photomultipliers in the continuous wave regime

We report the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon P-type and N-type substrate respectively. Responsivity measurements have been performed with an incident optical power from tenths of picowatts to hundreds of nanowatts and on a broad spectrum, ranging from ultraviolet to near infrared (340-820 nm). For both classes of investigated SiPMs, responsivity shows flat response versus the optical incident power, when a preset overvoltage and wavelength is applied . More in detail, this linear behavior extends up to about 10 nW for lower overvoltages, while a shrink is observed when the reverse bias voltage increases. With regards to our responsivity measurements, carried out in the abovementioned spectral range, we have found a peak around 669 nm for the N-on-P and a peak at 417 nm for the P-on-N SiPM. A physical explanation of the all experimental results is also provided in the paper.

Design and development of a fNIRS system prototype based on SiPM detectors

Functional Near Infrared Spectroscopy (fNIRS) uses near infrared sources and detectors to measure changes in absorption due to neurovascular dynamics in response to brain activation. The use of Silicon Photomultipliers (SiPMs) in a fNIRS system has been estimated potentially able to increase the spatial resolution. Dedicated SiPM sensors have been designed and fabricated by using an optimized process. Electrical and optical characterizations are presented. The design and implementation of a portable fNIRS embedded system, hosting up to 64 IR-LED sources and 128 SiPM sensors, has been carried out. The system has been based on a scalable architecture whose elementary leaf is a flexible board with 16 SiPMs and 4 couples of LEDs each operating at two wavelengths. An ARM based microcontroller has been joined with a multiplexing interface, able to control power supply for the LEDs and collect data from the SiPMs in a time-sharing fashion and with configurable temporal slots. The system will be validated by using a phantom made by materials of different scattering and absorption indices layered to mimic a human head. A preliminary characterization of the optical properties of the single material composing the phantom has been performed using the SiPM in the diffuse radial reflectance measurement technique. The first obtained results confirm the high sensitivity of such kind of detector in the detection of weak light signal even at large distance between the light source and the detector.

Silicon Photomultipliers Signal-to-Noise Ratio in the Continuous Wave Regime

We report on signal-to-noise ratio measurements carried out in the continuous wave regime, at different bias voltages, frequencies, and temperatures, on a class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal-to-noise ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the root mean square deviation of the same current. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of signal-to-noise ratio, as a function of the temperature of the SiPM package and at different bias voltages. Our results show the outstanding performance of this class of SiPMs even without the need of any cooling system.

Parametrical study of multilayer structures for CIGS solar cells

In this paper, a numerical analysis of relevant electrical parameters of multilayer structures for CIGS-based solar cells was carried out, employing the simulation software wxAMPS. In particular, we have focused on thin film cells having a ZnO:Al/ZnO/CdS/CIGS structure with a Molybdenum back contact. The aim of this work is to establish good theoretical reference values for an ongoing experimental activity, where our technology of choice is the single-step electrodeposition. In detail, we have analyzed how the main electrical properties change with the bang gap and the thickness of the absorber layer, for such a type of solar cell structure. Our results show that both efficiency and fill factor strongly depend on the energy gap. Instead, the absorber thickness plays a role up to a few microns, after which the cell parameters remain almost constant. As expected, the theoretical peak efficiency was found for a band gap value of 1.40 eV, corresponding to a Ga/(In+Ga) ratio of 0.66.

SNR measurements of silicon photomultipliers in the continuous wave regime

We report on our Signal-to-Noise Ratio (SNR) measurements carried out, in the continuous wave regime, at different frequencies and at various temperatures, on a novel class of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon p-type substrate. SNR of SiPMs is given by the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square (RMS) deviation of the same current. In our measurements, we have employed a 10 Hz equivalent noise bandwidth, around the lock-in amplifier reference frequency. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current, while background light is not present in our setup. We have found that the SNR is independent from frequency in the evaluated range 1 - 100 kHz. Our measurements highlight a quasi-flat trend of the SiPM SNR up to an overvoltage of about 5 V (with respect to the breakdown voltage of 28.0 V). At higher overvoltages (OV), we have observed a SNR decrease, mainly because of the strong increase of the shot noise. We have also performed a comparison between the SiPM and the PhotoMultiplier Tube (PMT) SNR as a function of the temperature of the SiPM package and at different bias voltages. Our results show the outstanding performance of this novel class of SiPMs even without the need of any cooling system. Indeed, their SNR is only a few dBs below the PMT SNR at room temperature. Furthermore, cooling the SiPM at a package cell temperature of 3 °C, it reaches the PMT SNR values at room temperature despite the SiPM is biased in the range 28.7 – 33.5 V, while the PMT has a bias value up to 950 V.

Time Of Flight measurements via two LiDAR systems with SiPM and APD

In this paper, we present an experimental comparison of two LiDAR systems, employing the SiPM and the APD as photodetectors, in terms of TOF measurements differing for the distance of the target and at different intensities of ambient light. The use of the APD represents the conventional approach, while the implementation of the SiPM is innovative. The performed measurements achieved very promising results, thus demonstrating the effectiveness of our LiDAR based on SiPM.

Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring

We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 μm device pitch exhibits the best results, being the best compromise in terms of full depletion and space-strip width ratio.

PPG embedded system for blood pressure monitoring

In this work, we have designed and implemented a microcontroller-based embedded system for blood pressure monitoring through a PhotoPlethysmoGraphic (PPG) technique. In our system, it is possible to perform PPG measurements via reflectance mode. Hardware novelty of our system consists in the adoption of Silicon PhotoMultiplier detectors. The signal received from the photodetector is used to calculate the instantaneous heart rate and therefore the heart rate variability. The obtained results show that, by using our system, it is possible to easily extract both the PPG and the breath signal. These signals can be used to monitor the patients during the convalescence both in hospital and at home.