Alexander Svetlitza

The TeraMOS sensor for monolithic passive THz imagers

We report of a new sensor, which is based on several leading technologies: THz photonics, CMOS-SOI (Silicon-on-Insulator) and MEMS/NEMS (Micro/Nano Electro Mechanical Systems). By introducing the TeraMOS sensor, which may be directly integrated with the CMOS-SOI readout circuitry, we expect to achieve a breakthrough in Terahertz passive imaging (0.5–1.5 THz) both in performance and cost. NEP (Noise Equivalent Power) of the order of 1 pW/Hz1/2 and NETD (Noise Equivalent Temperature Difference) of ∼0.5K is expected at room temperature. Preliminary electro-optical measurements are presented.

CMOS DC to DC switched converter with On Chip inductors

In this study we report a monolithic buck converter power IC with on-chip ferrite core inductors. The power IC is designed and fabricated with a standard 0.18μm CMOS process. On-chip inductor with ferrite epoxy core is used as the filter inductor in the buck converter. A 5V/500mA prototype system in package (SiP) buck converter is designed to operate at frequencies up to 10MHz.

The TeraMOS sensing pixel for monolithic passive uncooled THz imagers

We report a novel THz sensor, based on several leading technologies: THz photonics, CMOS-SOI and NEMS. By integrating the TeraMOS sensor with “thermal antenna”, we expect to achieve a breakthrough in uncooled Terahertz passive imaging.

CMOS-SOI-MEMS Thermal Antenna and Sensor for Uncooled THz Imaging

We report the design (electrical, mechanical, and thermal) and characterization of an improved performance uncooled thermal sensor for THz radiation based on thermal antenna. The 2-D imager pixel array provides the periodicity and constitutes a frequency-selective surface tuned to the desired THz wavelength band. The focal-plane array is first fabricated in a matured 0.18-μm CMOS-Silicon Over Insulator (SOI) process. By applying MEMS postprocessing using the CMOS metallization layers as built-in masks, micromachined-suspended directly absorbing resistive antennae integrated with thermal sensors are obtained, thus achieving good thermal isolation as well as low thermal mass. Characterization is performed using blackbody operating at 900-1200 K and THz filters. In contrast to the earlier published results, the reported device is characterized with a fully blocking set of three THz filters. With the current responsivity of ~2.6 A/W, Noise Equivalent Power (NEP) of the order of NEP/√Hz|1 Hz = 6.1 pW/√Hz, D* of 0.41·1010 cm√Hz/W, this uncooled THz sensor in the standard CMOS-SOI technology may enable monolithic uncooled passive THz imagers.

Modeling of CMOS-SOI-MEMS Thermal Antenna for Monolithic Passive Uncooled THz Imagers

We present modeling and simulations of uncooled passive THz imaging sensor based on a thermal antenna. The 2D CMOS-SOI-MEMS imager pixel array constitutes a frequency selective surface tuned to the desired wavelength band.

Modeling of CMOS-SOI-MEMS thermal antenna for monolithic passive uncooled THz imagers

We present electromagnetic, thermal, electrical, and mechanical modeling and simulations of uncooled passive THz imaging sensor based on a thermal antenna. The 2-D CMOS-SOI-MEMS imager pixel array constitutes a frequency selective surface tuned to the desired wavelength band. The modeling predicts enhanced performance of the symmetric design in terms of electromagnetic absorption, mechanical planarity, thermal response, and electrical signal.

Design and simulations of CMOS-SOI-NEMS thermal antenna and sensors for passive uncooled THz imaging

The paper presents design considerations of an innovative uncooled passive THz imaging sensor based on thermal antenna. The 2D imager pixel array, where each pixel size is of the order of the THz wavelength, provides the periodicity and constitutes a frequency selective surface tuned to the desired THz wavelength band. The uncooled passive THz sensors are implemented in cost-effective CMOS-SOI-NEMS technology. The focal plane array is first fabricated in a matured 0.18μm CMOS-SOI process. By applying NEMS post-processing using the CMOS metallization layers as built-in masks, nano-machined suspended directly-absorbing resistive antennas integrated with thermal sensors are obtained, thus achieving good thermal isolation as well as low thermal mass.

Revisiting thermal effects in submicron CMOS-SOI transistors

In this study we report measurements and modeling of true channel temperature of CMOS-SOI transistors. It is shown that the temperature rise is significant, above 100K, for transistors with applied power of ∼0.1 milliwatt. The CMOS-SOI transistors were designed and fabricated with a standard partially depleted CMOS — SOI 0.18μm process. It is shown that the local heating of the channel carriers may result in higher temperatures than predicted by the conventional steady-state thermal analysis. Modeling based on channels thermoelectric effects is applied to account for the observed local-heating. The results of this study have impact on circuit design and may be extended to regular CMOS submicron technology.