Alexis Rochas

Design and characterization of a CMOS 3-D image sensor based on single photon avalanche diodes

The design and characterization of an imaging system is presented for depth information capture of arbitrary three-dimensional (3-D) objects. The core of the system is an array of 32 /spl times/ 32 rangefinding pixels that independently measure the time-of-flight of a ray of light as it is reflected back from the objects in a scene. A single cone of pulsed laser light illuminates the scene, thus no complex mechanical scanning or expensive optical equipment are needed. Millimetric depth accuracies can be reached thanks to the rangefinders optical detectors that enable picosecond time discrimination. The detectors, based on a single photon avalanche diode operating in Geiger mode, utilize avalanche multiplication to enhance light detection. On-pixel high-speed electrical amplification can therefore be eliminated, thus greatly simplifying the array and potentially reducing its power dissipation. Optical power requirements on the light source can also be significantly relaxed, due to the arrays sensitivity to single photon events. A number of standard performance measurements, conducted on the imager, are discussed in the paper. The 3-D imaging system was also tested on real 3-D subjects, including human facial models, demonstrating the suitability of the approach.

Single photon detector fabricated in a complementary metal-oxide-semiconductor high-voltage technology

In this article, a fully integrated single photon detector including a silicon avalanche photodiode and a quenching circuit is presented. The low doping concentrations, inherent to the complementary metal–oxide–semiconductor (CMOS) high-voltage technology used, favor the absorption of red and infrared photons at the depletion region. The detection probability rapidly increases with excess bias voltages up to 5 V. At this value, the detection probability is larger than 20% between 420 nm and 620 nm and still 7% at 750 nm. The photosensitive area is 7 μm in diameter. Cointegration of the diode and the quenching resistor allows a drastic reduction of parasitic capacitances. Though passively quenched, the single photon detector exhibits a dead time as low as 75 ns. The avalanche current is quickly quenched in less than 3.5 ns leading to a relatively low afterpulsing probability of 7.5% at 5 V excess bias voltage. The afterpulses are located in the first microseconds after the avalanche event. At room temperature, the dark count rate is about 900 Hz at 5 V excess bias voltage. Cooling of the sensor below 0 °C is of minor interest since the tunneling process becomes dominant. A remarkably short timing resolution has been obtained with values lower than 50 ps for excess bias voltage higher than 5 V. The industrial CMOS high-voltage technology used guarantees low production costs. In applications where the light can be focused on the small photosensitive area using a high magnification objective, the fabricated single photon avalanche photodiode overcomes the features of standard photomultiplier tubes. The CMOS integration opens the way to the fabrication of an extremely compact array. The design can be easily fitted to a dedicated application. Furthermore, by using an industrial CMOS process, the cointegration of data processing electronics to produce a smart sensor would be a feasible task.

Low-noise silicon avalanche photodiodes fabricated in conventional CMOS technologies

We present a simple design technique that allows the fabrication of UV/blue-selective avalanche photodiodes in a conventional CMOS process. The photodiodes are fabricated in a twin tub 0.8 /spl mu/m CMOS technology. An efficient guard-ring structure is created using the lateral diffusion of two n-well regions separated by a gap of 0.6 /spl mu/m. When operated at a multiplication gain of 20, our photodiodes achieve a very low dark current of only 400 pA/mm/sup 2/, an excess noise factor F=7 at /spl lambda/=400 nm and a good gain uniformity. At zero bias voltage, the responsivity peaks at /spl lambda/=470 nm, with 180 mA/W. It corresponds to a 50% quantum efficiency. Successive process steps are simulated to provide a comprehensive understanding of this technique.

First fully integrated 2-D array of single-photon detectors in standard CMOS technology

A two-dimensional (2-D) array (4 by 8) of single-photon avalanche diodes integrated in an industrial complementary metal-oxide-semiconductor (CMOS) process is presented. Each pixel combines a photodiode biased above its breakdown voltage in the so-called Geiger mode, a quenching resistor, and a simple comparator. The pitch between the pixels is 75 /spl mu/m and the diameter of each pixel is 6.4 /spl mu/m. The full integration allows reducing the number of charge carriers in a Geiger pulse. The electroluminescence responsible for optical crosstalks between pixels is then reduced leading to a negligible optical crosstalk probability. Thanks to the cleanness of the fabrication process, no afterpulsing effects are noticed. At room temperature, most of the pixels exhibit a dark-count rate of about 50 Hz. The detection probability is almost identical for all 32 pixels of the array with relative variation in the range of a few percents. This letter demonstrates the feasibility of an array of single-photon detectors sensitive in the visible part of the spectrum. Besides low production costs and compactness, an undeniable benefit lies in the potential to easily modify the design to fit a specific application. Furthermore, the CMOS integration opens the way to on-chip data processing.

Long-term performance of the SwissQuantum quantum key distribution network in a field environment

In this paper, we report on the performance of the SwissQuantum quantum key distribution (QKD) network. The network was installed in the Geneva metropolitan area and ran for more than one-and-a-half years, from the end of March 2009 to the beginning of January 2011. The main goal of this experiment was to test the reliability of the quantum layer over a long period of time in a production environment. A key management layer has been developed to manage the key between the three nodes of the network. This QKD-secure network was utilized by end-users through an application layer.

SiPM for fast Photon-Counting and Multiphoton Detection

We demonstrate fast counting and multiphoton detection abilities of a Silicon Photo Multiplier (SiPM). In fast counting mode we are able to detect two consecutive photons separated by only 2.3 ns corresponding to 430 MHz. The counting efficiency for small optical intensities at lambda= 532 nm was found to be around 16% with a dark count rate of 52 kHz at T= -5 masculine C. Using the SiPM in multiphoton detection mode, we find a good signal discrimination for different numbers of simultaneously detected photons.

Parallel single molecule detection with a fully integrated single-photon 2X2 CMOS detector array

We present parallel single molecule detection (SMD) and fluorescence correlation spectroscopy (FCS) experiments with a fully integrated complementary metal oxide semiconductor (CMOS) single-photon 2x2 detector array. Multifocal excitation is achieved with a diffractive optical element (DOE). Special emphasis is placed on parallelization of the total system. The performance of the novel single-photon CMOS detector is investigated and compared to a state-of-the-art single-photon detecting module [having an actively quenched avalanche photodiode (APD)] by measurements on free diffusing molecules at different concentrations. Despite the order of magnitude lower detection efficiency of the CMOS detector compared to the state-of-the-art single-photon detecting module, we achieve single molecule sensitivity and reliably determine molecule concentrations. In addition, the CMOS detector performance for the determination of the fraction of slowly diffusing molecules in a primer solution (two-component analysis) is demonstrated. The potential of this new technique for high-throughput confocal-detection-based systems is discussed.

Toward a 3-D camera based on single photon avalanche diodes

A three-dimensional (3-D) imager is presented, capable of computing the depth map as well as the intensity scale of a given scene. The heart of the system is a two-dimensional array of single photon avalanche diodes fabricated in standard CMOS technology. The diodes exhibit low-noise equivalent-power high-dynamic range, and superior linearity. The 3-D imager achieves submillimetric precision at a depth-of-field of a few meters. This precision was achieved by averaging over 10 000 measurements. The imager operates using a standard laser source pulsed at 50 MHz with 40-mW peak power and requires no mechanical scanning mechanisms or expensive optical equipment.

A CMOS single photon avalanche diode array for 3D imaging

An 8x4 avalanche diode array in a 0.8/spl mu/m CMOS process uses single photon counting for time-of-flight range finding with 100ps 40mW decollimated laser pulses. An accuracy of 618/spl mu/m is achieved from 15cm to 1 m with 10/sup 4/ pulses.

A CMOS 3D camera with millimetric depth resolution

A 3D imager is presented, capable of capturing the depth map of an arbitrary scene. Depth is measured by computing the time-of-flight of a ray of light as it leaves the source and is reflected by the objects in the scene. The round-trip time is converted to a digital code independently for each pixel using a CMOS time-to-digital converter. To reach millimetric accuracies an array of 32/spl times/32 highly sensitive, ultra-low jitter CMOS detectors capable of detecting a single photon is used. The scene is illuminated using a cone of low power pulsed laser light, thus no mechanical scanning devices or expensive optical equipment are required.