Alfredo Moncayo

A 2.6-GByte/s multipurpose chip-to-chip interface

A 2.6 GByte/s megacell that interfaces to single or double byte wide DRAMs or logic chips is implemented using 0.35-0.18 /spl mu/m CMOS technologies. Special I/O circuits are used to guarantee 800 Mbit/s/pin data rate. Microwave PC board design methodologies are used to achieve the maximum possible interconnect bandwidth.

Physical layer design of a 1.6 GB/s DRAM bus

This paper describes an innovative design and modeling methodology for development of a high performance memory bus with data signaling bandwidth of up to 1.6 gigabytes per second. Data signals operate at 800 megabits per second transfer rate. The clock frequency is 400 MHz and the signal edge transition time is 200 ps. Due to the extremely high frequencies involved, overall system electrical performance must be optimized. By following the methodology outlined in this paper, good correlation was obtained between simulated and measured results.