Amro M. Elshurafa

Microscale electrostatic fractional capacitors using reduced graphene oxide percolated polymer composites

We show that graphene-percolated polymer composites exhibit fractional capacitance response in the frequency range of 50 kHz–2 MHz. In addition, it is shown that by varying the loading of graphene within the matrix from 2.5% to 12%, the phase can be controllably tuned from −67° to −31°, respectively. The electrostatic fractional capacitors proposed herein are easy to fabricate and offer integration capability on electronic printed circuit boards.

Nonlinear Dynamics of Spring Softening and Hardening in Folded-MEMS Comb Drive Resonators

This paper studies analytically and numerically the spring softening and hardening phenomena that occur in electrostatically actuated microelectromechanical systems comb drive resonators utilizing folded suspension beams. An analytical expression for the electrostatic force generated between the combs of the rotor and the stator is derived and takes into account both the transverse and longitudinal capacitances present. After formulating the problem, the resulting stiff differential equations are solved analytically using the method of multiple scales, and a closed-form solution is obtained. Furthermore, the nonlinear boundary value problem that describes the dynamics of inextensional spring beams is solved using straightforward perturbation to obtain the linear and nonlinear spring constants of the beam. The analytical solution is verified numerically using a Matlab/Simulink environment, and the results from both analyses exhibit excellent agreement. Stability analysis based on phase plane trajectory is also presented and fully explains previously reported empirical results that lacked sufficient theoretical description. Finally, the proposed solutions are, once again, verified with previously published measurement results. The closed-form solutions provided are easy to apply and enable predicting the actual behavior of resonators and gyroscopes with similar structures.

Determination of maximum power transfer conditions of bimorph piezoelectric energy harvesters

In this paper, a method to find the maximum power transfer conditions in bimorph piezoelectric-based harvesters is proposed. Explicitly, we derive a closed form expression that relates the load resistance to the mechanical parameters describing the bimorph based on the electromechanical, single degree of freedom, analogy. Further, by taking into account the intrinsic capacitance of the piezoelectric harvester, a more descriptive expression of the resonant frequency in piezoelectric bimorphs was derived. In interest of impartiality, we apply the proposed philosophy on previously published experimental results and compare it with other reported hypotheses. It was found that the proposed method was able to predict the actual optimum load resistance more accurately than other methods reported in the literature.

RF MEMS Fractal Capacitors With High Self-Resonant Frequencies

This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS are discussed, including suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention.

All-pMOS 50-V Charge Pumps Using Low-Voltage Capacitors

In this paper, two high-voltage charge pumps (CPs) are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the CP, high-density capacitors have been utilized. Nonetheless, these high-density capacitors suffer from low breakdown voltage, which is not compatible with the targeted high-voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two CP circuits were fabricated in a 0.6- μm CMOS technology with poly0-poly1 capacitors. The output voltage of the two CPs reached 42.8 and 51 V, whereas the voltage across any capacitor did not exceed the value of the input voltage. Compared with other designs reported in the literature, the proposed CP provides the highest output voltage, which makes it more suitable for tuning MEMS devices.

Modeling of MEMS piezoelectric energy harvesters using electromagnetic and power system theories

This work proposes a novel methodology for estimating the power output of piezoelectric generators. An analytical model that estimates for the first time the loss ratio and output power of piezoelectric generators based on the direct mechanical-to-electrical analogy, electromagnetic theory, and power system theory is developed. The mechanical-to-electrical analogy and power system theory allow the derivation of an equivalent input impedance expression for the network, whereas electromagnetic transmission line theory allows deduction of the equivalent electromechanical loss of the piezoelectric generator. By knowing the mechanical input power and the loss of the network, calculation of the output power of the piezoelectric device becomes a straightforward procedure. Experimental results based on published data are also presented to validate the analytical solution. In order to fully benefit from the well-established electromagnetic transmission line and electric circuit theories, further analyses on the resonant frequency, bandwidth, and sensitivity are presented. Compared to the conventional modeling methods currently being adopted in the literature, the proposed method provides significant additional information that is crucial for enhanced device operation and quick performance optimization.

MEMS variable capacitance devices utilizing the substrate: I. Novel devices with a customizable tuning range

This paper, the first in a series of two, presents a paradigm shift in the design of MEMS parallel plate PolyMUMPS variable capacitance devices by proposing two structures that utilize the substrate and are able to provide predetermined, customizable, tuning ranges and/or ratios. The proposed structures can provide theoretical tuning ranges anywhere from 4.9 to 35 and from 3.4 to 26 respectively with a simple, yet effective, layout modification as opposed to the previously reported devices where the tuning range is fixed and cannot be varied. Theoretical analysis is carried out and verified with measurements of fabricated devices. The first proposed device possessed initially a tuning range of 4.4. Two variations of the structure having tuning ranges of 3 and 3.4, all at 1 GHz, were also successfully developed and tested. The second proposed variable capacitance device behaved as a switch.

Modeling and fabrication of an RF MEMS variable capacitor with a fractal geometry

In this paper, we model, fabricate, and measure an electrostatically actuated MEMS variable capacitor that utilizes a fractal geometry and serpentine-like suspension arms. Explicitly, a variable capacitor that possesses a top suspended plate with a specific fractal geometry and also possesses a bottom fixed plate complementary in shape to the top plate has been fabricated in the PolyMUMPS process. An important benefit that was achieved from using the fractal geometry in designing the MEMS variable capacitor is increasing the tuning range of the variable capacitor beyond the typical ratio of 1.5. The modeling was carried out using the commercially available finite element software COMSOL to predict both the tuning range and pull-in voltage. Measurement results show that the tuning range is 2.5 at a maximum actuation voltage of 10V.

MEMS variable capacitance devices utilizing the substrate: II. Zipping varactors

This paper, the second and last in this series, introduces PolyMUMPS zipping varactors that exploit the substrate and provide a high tuning range and a high quality factor. Building on the important findings of part I of this paper, the substrate was utilized effectively once again in the design and fabrication of zipping varactors to attain devices with very good performance. Two zipping varactors are proposed, analysed theoretically, simulated, fabricated and tested successfully. The tuning range, quality factor and actuation voltage of those varactors are 4.5, 16.4, 55 V and 4.2, 17, 55 V respectively. Finally, and based on one of the proposed zipping varactors, a very large capacitance value varactor array, with a tuning range of 5.3, was designed and tested. To the best of our knowledge, these zipping varactors exhibit the best reported characteristics in PolyMUMPS to date within their category in terms of tuning range, quality factor, required actuation voltage and total area consumed.

Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

In this paper, nanopillars with heights of 1μm to 5μm and widths of 250nm to 500nm have been fabricated with a near room temperature etching process. The nanopillars were achieved with a continuous deep reactive ion etching technique and utilizing PMMA (polymethylmethacrylate) and Chromium as masking layers. As opposed to the conventional Bosch process, the usage of the unswitched deep reactive ion etching technique resulted in nanopillars with smooth sidewalls with a measured surface roughness of less than 40nm. Moreover, undercut was nonexistent in the nanopillars. The proposed fabrication method achieves etch rates four times faster when compared to the state-of-the-art, leading to higher throughput and more vertical side walls. The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly along with the controlling transistors to build a complete bio-inspired smart CMOS image sensor on the same wafer.