Ana-Maria Lepadatu

Stress-induced traps in multilayered structures

The trap parameters of defects in Si/CaF2 multilayered structures were determined from the analysis of optical charging spectroscopy measurements. Two kinds of maxima were observed. Some of them were rather broad, corresponding to “normal” traps, while the others, very sharp, were attributed to stress-induced traps. A procedure of optimal linear smoothing the noisy experimental data has been developed and applied. This procedure is based on finding the minimal value of the relative error with respect to the value of the smoothing window. In order to obtain a better accuracy for the description of the trapping-detrapping process, a Gaussian temperature dependence of the capture cross-sections characterizing the stress-induced traps was introduced. Both the normal and the stress-induced traps have been characterized, including some previously considered as only noise features.

The influence of shape and potential barrier on confinement energy levels in quantum dots

The influence of the shape of silicon quantum dots embedded in an amorphous silica matrix on the quantum confinement energy levels, as well as that of the Si/SiO2 potential barrier, are studied. The energy levels are computed using both the infinite and finite rectangular quantum well models for spherical quantum dots and the infinite rectangular quantum well for prolate spheroidal quantum dots. The results are compared with each other and also with the experimental activation energies obtained from the temperature dependence of the dark current. These activation energies are identified with the differences between the quantum confinement energies, subject to the selection rules. The finite rectangular quantum well model takes into account the experimental value of the finite potential barrier and the matrix-to-dot electron mass ratio. The energy levels are smaller than those for the infinite rectangular quantum well case; they decrease when the potential barrier decreases and the mass ratio increases. Di...

Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride

The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walled carbon nanotube network has an uniform spatial extension in the silicon nitride matrix. The current-voltage and resistance-temperature characteristics are both linear, proving the metallic behavior of the network. The I-V curves present oscillations that are further analyzed by computing the conductance-voltage characteristics. The conductance presents minima and maxima that appear at the same voltage for both bias polarities, at both 20 and 298 K, and that are not periodic. These oscillations are interpreted as due to percolation processes. The voltage percolation thresholds are identified with the conductance minima.

Effects produced by iodine irradiation on high resistivity silicon

The effects of 5 × 1011 cm−2 6+I127 ions of 28 MeV kinetic energy on high resistivity (100) Si were studied. The profile of primary defects was simulated. The defects produced by irradiation which act as traps were investigated. Thermally stimulated current measurements without externally applied bias were used, and for this the traps were charged by illuminating samples with 1000, 800, and 400 nm wavelengths. The discharge currents were recorded and modeled, and therefore the parameters of the traps were determined. The presence of I ions, heavier than Si, stopped into the target was modeled as a temperature independent electric field.

Percolation Phenomena in Silicon - Based Nanocrystalline Systems

The present paper analyzes the appearance of voltage percolation thresholds in the current-voltage characteristics measured on silicon-based nanocrystalline systems that present random space distribution of the nanocrystallites. This percolation phenomenon is explained on the basis of the probability of tunneling under applied bias and is related to the samples microstructure.

Temperature dependence of capture coefficients in trapping phenomena

The temperature dependence of the capture coefficients in trapping phenomena is investigated. It is proved that, besides the dependence induced by the thermal velocity of the carriers, the stress-induced traps at the interfaces of the multi-layered structures present a supplementary temperature dependence. This dependence is found to be of Gaussian type and is in a good agreement with the experimental results.

Influence of preparation method on structural properties of GeSiO nanosystems

GeSiO nanosystems were obtained using two different preparation methods, sol-gel and magnetron-sputtering. Transmission electron microscopy measurements were performed to investigate the films structure. Amorphous and crystalline Ge dots embedded in amorphous silicon dioxide were observed. The Ge concentration in the GeSiO films was by Energy-dispersive X-ray spectroscopy.

Charge storage properties of HfO 2 /Ge-HfO 2 /SiO 2 trilayer structures

We report on the charge storage properties of trilayer structures consisting in sputtered gate HfO2/co-sputtered Ge-HfO2 layer/rapid thermal tunneling SiO2 oxide. Investigations of transmission electron microscopy and X-ray diffraction evidence the formation of HfO2 with mixed structure of monoclinic and tetragonal in the annealed structures. Capacitance-voltage (C-V) characteristics were measured on Al/HfO2/Ge-HfO2/SiO2/Si/Al metal-oxide-semiconductor capacitors based on as-deposited and annealed structures. Large C-V hysteresis is observed for the as-deposited structures and is controlled by traps present in oxide and interface. The annealing yields a C-V hysteresis with smaller memory window being due to injected charges in Ge nanocrystals.

Conduction mechanism versus annealing in SiO 2 films with Ge nanoparticles

This paper analyses and discusses the effect of Ge/Si atomic ratio and annealing temperature on the conduction mechanisms governing the electrical behavior of Ge-SiO2 films containing Ge nanoparticles embedded in amorphous SiO2 matrix. For this, the experimental conductance-temperature curves are modeled in correlation with the microstructure findings for two types of films. One type of films has a lower Ge/Si ratio of 0.73 and was obtained by magnetron sputtering followed by annealing in H2, at 500 °C, while the second one has a higher ratio of 1.86 and was obtained also by sputtering, but was annealed in N2, at 800 °C. Both types of films show an electrical behavior with a T1/4 conductance dependence on temperature, typical for hopping mechanism.

Preparation and electrical characterization of SiGe nanostructures

This paper presents the preparation and investigation of structure and electrical properties of nanostructures consisting of Si1−xGex nanocrystals. Nanostructures were prepared by RF magnetron sputtering, followed by thermal annealing. X-ray diffraction, TEM, high resolution TEM and SAED measurements were performed. Current-voltage and current-temperature characteristics were taken. Nanostructures have different electrical behavior. Current-voltage curves are linear, while current-temperature curves are dependent on the annealing temperature. In films annealed at 650°C, electrical transport is controlled by quantum confinement effect and localized states (current-temperature characteristics), while in films annealed at 900°C it is controlled by tunneling of thermally activated carriers between neighboring nanocrystals.