Andreja Erbes

Impact of mode localization on the motional resistance of coupled MEMS resonators

This paper investigates the effect of mode-localization that arises from structural asymmetry induced by manufacturing tolerances in mechanically coupled, electrically transduced Si MEMS resonators. We demonstrate that in the case of such mechanically coupled resonators, the achievable series motional resistance (Rx) is dependent not only on the quality factor (Q) but also on the variations in the eigenvector of the chosen mode of vibration induced by mode localization due to manufacturing tolerances during the fabrication process. We study this effect of mode-localization both theoretically and experimentally in two pairs of coupled double-ended tuning fork resonators with different levels of initial structural asymmetry. The measured series Rx is minimal when the system is close to perfect symmetry and any deviation from structural symmetry induced by fabrication tolerances leads to a degradation in the effective Rx. Mechanical tuning experiments of the stiffness of one of the coupled resonators was also conducted to study variations in Rx as a function of structural asymmetry within the system, the results of which demonstrated consistent variations in motional resistance with predictions.

Vacuum packaged low-power resonant MEMS strain gauge

This paper describes a technical approach toward the realization of a low-power temperature-compensated micromachined resonant strain sensor. The sensor design is based on two identical and orthogonally-oriented resonators where the differential frequency is utilized to provide an output proportional to the applied strain with temperature compensation achieved to first order. Interface circuits comprising of two front-end oscillators, a mixer, and low-pass filter are designed and fabricated in a standard 0.35-

Low power MEMS oscillators for sensor applications

\mu \text{m}

Numerical Study of the Impact of Vibration Localization on the Motional Resistance of Weakly Coupled MEMS Resonators

CMOS process. The characterized devices demonstrate a scale factor of 2.8 Hz/

Vacuum Packaged Low-Power Resonant MEMS Strain Sensor

\mu \varepsilon

Investigating the impact of stuctural symmetry in coupled resonator arrays on the frequency stability of A CMOS-MEMS oscillator

over a strain range of 1000

Numerical study of the impact of process variations on the motional resistance of weakly coupled MEMS resonators

\mu \varepsilon

Acoustic mode confinement using coupled cavity structures in UHF unreleased MEMS resonators

with excellent linearity over the measurement range. The compensated frequency drift due to temperature is reduced to 4% of the uncompensated value through this scheme. The total continuous power consumption of the strain sensor is 3

High-frequency piezoelectric-on-Si MEMS resonator and numerical method for parameter extraction

\mu \text{W}

MEMS-based mechanical AGC for oscillator circuits

from a 1.2 V supply. This low power implementation is essential to enable battery-powered or energy harvesting enabled monitoring applications. [2015-0328]