Angela Kok

First fabrication of full 3D-detectors at SINTEF

3D-detectors, with electrodes penetrating through the entire substrates have drawn great interests for high energy physics and medical imaging applications. Since its introduction by C. Kenney et al in 1995, many laboratories have begun research on different 3D-detector structures to simplify and industrialise the fabrication process. SINTEF MiNaLab joined the 3D collaboration in 2006 and started the first 3D fabrication run in 2007. This is the first step in an effort to fabricate affordable 3D-detectors in small to medium size production volumes. The first run was fully completed in February 2008 and preliminary results are promising. Good p-n junction characteristics have been shown on selected devices at the chip level with a leakage current of less than 0.5 nA per pixel. Thus SINTEF is the second laboratory in the world after the Stanford Nanofabrication Facility that has succeeded in demonstrating full 3D-detectors with active edge. A full 3D-stacked detector system were formed by bump-bonding the detectors to the ATLAS readout electronics, and successful particle hit maps using an Am-241 source were recorded. Most modules, however, showed largely increased leakage currents after assembly, which is due to the active edge and p-spray acting as part of the total chip pn-junction and not as a depletion stop. This paper describes the first fabrication and the encountered processing issues. The preliminary measurements on both the individual detector chips and the integrated 3D-stacked modules are discussed. A new lot has now been started on p-type wafers, which offers a more robust configuration with the active edge acting as depletion stop instead of part of the pn-junction.

Test beam results of 3D silicon pixel sensors for the ATLAS upgrade

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS inner detector solenoid field. Sensors were bump-bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

3D Active Edge Silicon Detector Tests With 120 GeV Muons

3D detectors with electrodes penetrating through the silicon wafer and covering the edges were tested in the SPS beam line X5 at CERN in autumn 2003. Detector parameters including efficiency, signal-to-noise ratio, and edge sensitivity were measured using a silicon telescope as a reference system. The measured sensitive width and the known silicon width were equal within less than 10 mum.

Increased Speed: 3D Silicon Sensors; Fast Current Amplifiers

The authors describe techniques to make fast, sub-nanosecond time resolution solid-state detector systems using sensors with 3D electrodes, current amplifiers, constant-fraction comparators or fast wave-form recorders, and some of the next steps to reach still faster results.

Recent developments and future perspectives in 3D silicon radiation sensors

In this paper we report on the most recent achievements of the ATLAS 3D Sensors Collaboration in the development of silicon 3D sensors. Results from 3D pixels production for the ATLAS Insertable B-Layer (IBL) are presented, showing the high quality and good process reproducibility of the technology. In view of the future detector upgrades at the LHC, a new generation of 3D pixel sensors will be developed. This will require some new ideas and the solution of technological challenges. Both will briefly be addressed in this paper.

3D Radiation Detectors: Charge Collection Characterisation and Applicability of Technology for Microdosimetry

A study of charge collection in SINTEF 3D active edge silicon detectors was carried out at ANSTO using Ion Beam Induced Charge (IBIC) technique. An IBIC study has shown that several different geometries of 3D detectors have full depletion under low applied bias. The effect of fast neutron and gamma radiation on their charge collection efficiency was also investigated. A 3D active edge silicon detector technology has demonstrated extremely promising performance for application of the 3D Sensitive Volumes (SVs) fabrication methods to SOI microdosimetry.

Results from the first prototype of large 3D active edge sensors

3D active edge sensors have advantages such as radiation hardness and edgeless capability. With the use of deep reactive ion etching and wafer bonding, 18.5 by 20.5 mm2 3D detectors with active edges have been successfully fabricated at SINTEF MiNaLab. These sensors are compatible with the ATLAS FE-I4 readout electronics. Fabrication process and difficulties are presented and the preliminary electrical measurements are also discussed.

Multi-strip silicon sensors for beam array monitoring in micro-beam radiation therapy

We present here the latest results from tests performed at the ESRF ID17 and ID21 beamlines for the characterization of novel beam monitors for Microbeam Radiation Therapy (MRT), which is currently being implemented at ID17. MRT aims at treating solid tumors by exploiting an array of evenly spaced microbeams, having an energy spectrum distributed between 27 and 600keV and peaking at 100keV. Given the high instantaneous dose delivered (up to 20kGy/s), the position and the intensity of the microbeams has to be precisely and instantly monitored. For this purpose, we developed dedicated silicon microstrip beam monitors. We have successfully characterized them, both with a microbeam array at ID17, and a submicron scanning beam at ID21. We present here the latest results obtained in recent tests along with an outlook on future developments.

Thin silicon strip detectors for beam monitoring in Micro-beam Radiation Therapy

Microbeam Radiation Therapy (MRT) is an emerging cancer treatment that is currently being developed at the European Synchrotron Radiation Facility (ESRF) in Grenoble, France. This technique uses a highly collimated and fractionated X-ray beam array with extremely high dose rate and very small divergence, to benefit from the dose-volume effect, thus sparing healthy tissue. In case of any beam anomalies and system malfunctions, special safety measures must be installed, such as an emergency safety shutter that requires continuous monitoring of the beam intensity profile. Within the 3DMiMic project, a novel silicon strip detector that can tackle the special features of MRT, such as the extremely high spatial resolution and dose rate, has been developed to be part of the safety shutter system. The first prototypes have been successfully fabricated, and experiments aimed to demonstrate their suitability for this unique application have been performed. Design, fabrication and the experimental results as well as any identified inadequacies for future optimisation are reported and discussed in this paper.

Electrical Characterization and Preliminary Beam Test Results of 3D Silicon CMS Pixel Detectors

The fabrication of 3D detectors which requires bulk micromachining of columnar electrodes has been realized with advancements in MEMS technology. Since the fabrication of the first 3D prototype in Stanford Nanofabrication Facility in 1997, a significant effort has been put forth to transfer the 3D detector technology to large scale manufacturing for future high luminosity collider experiments, in which the radiation hardness will be the primary concern, and other applications such as medical imaging and X-ray imaging for molecular biology. First, alternative 3D structures, single type column (STC) and double-side double type column (DDTC) 3D detectors, were produced at FBK-irst (Trento, Italy) and CNM-Barcelona (Spain), and assessed thoroughly to improve the production technology towards the standard full-3D detectors. The 3D collaboration has been extended to include SINTEF (Norway), which is committed to small to medium scale production of active edge full-3D silicon sensors. This paper focuses on p-type 3D detectors compatible with the CMS pixel front end electronics from the second run of fabrication at SINTEF clean room facilities. The sensors that passed the wafer level electrical characterization have been bump-bonded at IZM (Germany), assembled into modules and wire-bonded for functional characterization at Purdue University. We report the leakage current characteristics, bump-bond quality, threshold, noise, and gain measurement results of these 3D modules as well as the preliminary beam test data taken at Fermi National Accelerator Laboratory.