Anirudha V. Sumant

Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films

Ultrananocrystalline diamond (UNCD) films with up to 0.2% total nitrogen content were synthesized by a microwave plasma-enhanced chemical-vapor-deposition method using a CH4(1%)/Ar gas mixture and 1%–20% nitrogen gas added. The electrical conductivity of the nitrogen-doped UNCD films increases by five orders of magnitude (up to 143 Ω−1 cm−1) with increasing nitrogen content. Conductivity and Hall measurements made as a function of film temperature down to 4.2 K indicate that these films have the highest n-type conductivity and carrier concentration demonstrated for phase-pure diamond thin films. Grain-boundary conduction is proposed to explain the remarkable transport properties of these films.

Ultrananocrystalline diamond thin films for MEMS and moving mechanical assembly devices

MEMS devices are currently fabricated primarily in silicon because of the available surface machining technology. A major problem with the Si-based MEMS technology is that Si has poor mechanical and tribological properties J.J. Sniegowski, in: B.

All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor

In this article, we report only 10 atomic layer thick, high mobility, transparent thin film transistors (TFTs) with ambipolar device characteristics fabricated on both a conventional silicon platform as well as on a flexible substrate. Monolayer graphene was used as metal electrodes, 3-4 atomic layers of h-BN were used as the gate dielectric, and finally bilayers of WSe2 were used as the semiconducting channel material for the TFTs. The field effect carrier mobility was extracted to be 45 cm(2)/(V s), which exceeds the mobility values of state of the art amorphous silicon based TFTs by ∼100 times. The active device stack of WSe2-hBN-graphene was found to be more than 88% transparent over the entire visible spectrum and the device characteristics were unaltered for in-plane mechanical strain of up to 2%. The device demonstrated remarkable temperature stability over 77-400 K. Low contact resistance value of 1.4 kΩ-μm, subthreshold slope of 90 mv/decade, current ON-OFF ratio of 10(7), and presence of both electron and hole conduction were observed in our all two-dimensional (2D) TFTs, which are extremely desirable but rarely reported characteristics of most of the organic and inorganic TFTs. To the best of our knowledge, this is the first report of all 2D transparent TFT fabricated on flexible substrate along with the highest mobility and current ON-OFF ratio.

Macroscale superlubricity enabled by graphene nanoscroll formation

Slip sliding away Many applications would benefit from ultralow friction conditions to minimize wear on the moving parts such as in hard drives or engines. On the very small scale, ultralow friction has been observed with graphite as a lubricant. Berman et al. achieved superlubricity using graphene in combination with crystalline diamond nanoparticles and diamondlike carbon (see the Perspective by Hone and Carpick). Simulations showed that sliding of the graphene patches around the tiny nanodiamond particles led to nanoscrolls with reduced contact area that slide easily against the amorphous diamondlike carbon surface. Science, this issue p. 1118; see also p. 1087 Nanodiamonds wrapped with graphene sheets lead to ultralow friction against a diamondlike carbon surface. [Also see Perspective by Hone and Carpick] Friction and wear remain as the primary modes of mechanical energy dissipation in moving mechanical assemblies; thus, it is desirable to minimize friction in a number of applications. We demonstrate that superlubricity can be realized at engineering scale when graphene is used in combination with nanodiamond particles and diamondlike carbon (DLC). Macroscopic superlubricity originates because graphene patches at a sliding interface wrap around nanodiamonds to form nanoscrolls with reduced contact area that slide against the DLC surface, achieving an incommensurate contact and substantially reduced coefficient of friction (~0.004). Atomistic simulations elucidate the overall mechanism and mesoscopic link bridging the nanoscale mechanics and macroscopic experimental observations.

Microstructure of ultrananocrystalline diamond films grown by microwave Ar–CH4 plasma chemical vapor deposition with or without added H2

Ultrananocrystalline diamond (UNCD) films, grown using microwave plasma-enhanced chemical vapor deposition with gas mixtures of Ar–1%CH4 or Ar–1%CH4–5%H2, have been examined with transmission electron microscopy (TEM). The films consist of equiaxed nanograins (2–10 nm in diameter) and elongated twinned dendritic grains. The area occupied by dendritic grains increases with the addition of H2. High resolution electron microscopy shows no evidence of an amorphous phase at grain boundaries, which are typically one or two atomic layer thick (0.2–0.4 nm). Cross-section TEM reveals a noncolumnar structure of the films. The initial nucleation of diamond occurs directly on the Si substrate when H2 is present in the plasma. For the case of UNCD growth from a plasma without addition of H2, the initial nucleation occurs on an amorphous carbon layer about 10–15 nm thick directly grown on the Si substrate. This result indicates that hydrogen plays a critical role in determining the nucleation interface between the UNCD...

Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp2-on-sp3 Technology

Graphene demonstrated potential for practical applications owing to its excellent electronic and thermal properties. Typical graphene field-effect transistors and interconnects built on conventional SiO(2)/Si substrates reveal the breakdown current density on the order of 1 μA/nm(2) (i.e., 10(8) A/cm(2)), which is ~100× larger than the fundamental limit for the metals but still smaller than the maximum achieved in carbon nanotubes. We show that by replacing SiO(2) with synthetic diamond, one can substantially increase the current-carrying capacity of graphene to as high as ~18 μA/nm(2) even at ambient conditions. Our results indicate that graphenes current-induced breakdown is thermally activated. We also found that the current carrying capacity of graphene can be improved not only on the single-crystal diamond substrates but also on an inexpensive ultrananocrystalline diamond, which can be produced in a process compatible with a conventional Si technology. The latter was attributed to the decreased thermal resistance of the ultrananocrystalline diamond layer at elevated temperatures. The obtained results are important for graphenes applications in high-frequency transistors, interconnects, and transparent electrodes and can lead to the new planar sp(2)-on-sp(3) carbon-on-carbon technology.

Are Diamonds a MEMS' Best Friend?

Next-generation military and civilian communication systems will require technologies capable of handling data/ audio, and video simultaneously while supporting multiple RF systems operating in several different frequency bands from the MHz to the GHz range [1]. RF microelectromechani-cal/nanoelectromechanical (MEMS/NEMS) devices, such as resonators and switches, are attractive to industry as they offer a means by which performance can be greatly improved for wireless applications while at the same time potentially reducing overall size and weight as well as manufacturing costs.

Preventing Nanoscale Wear of Atomic Force Microscopy Tips Through the Use of Monolithic Ultrananocrystalline Diamond Probes

Nanoscale wear is a key limitation of conventional atomic force microscopy (AFM) probes that results in decreased resolution, accuracy, and reproducibility in probe-based imaging, writing, measurement, and nanomanufacturing applications. Diamond is potentially an ideal probe material due to its unrivaled hardness and stiffness, its low friction and wear, and its chemical inertness. However, the manufacture of monolithic diamond probes with consistently shaped small-radius tips has not been previously achieved. The first wafer-level fabrication of monolithic ultrananocrystalline diamond (UNCD) probes with <5-nm grain sizes and smooth tips with radii of 30-40 nm is reported, which are obtained through a combination of microfabrication and hot-filament chemical vapor deposition. Their nanoscale wear resistance under contact-mode scanning conditions is compared with that of conventional silicon nitride (SiN(x)) probes of similar geometry at two different relative humidity levels (approximately 15 and approximately 70%). While SiN(x) probes exhibit significant wear that further increases with humidity, UNCD probes show little measurable wear. The only significant degradation of the UNCD probes observed in one case is associated with removal of the initial seed layer of the UNCD film. The results show the potential of a new material for AFM probes and demonstrate a systematic approach to studying wear at the nanoscale.

Thermal stability and rehybridization of carbon bonding in tetrahedral amorphous carbon

We perform a quantitative investigation of the energetics of thermally induced sp3→sp2 conversion of carbon-carbon bonds in tetrahedral amorphous carbon (ta-C) films by using near-edge x-ray absorption fine structure (NEXAFS) and Raman spectroscopy. We investigate the evolution of the bonding configuration in ta-C thin films subjected to high temperature annealing in flowing Argon gas using a rapid thermal annealing furnace over the range of 200–1000 °C. We observe no substantial change in bonding structure below 600 °C. Changes in the NEXAFS and Raman spectra start to appear above 600 °C, and by 1000 °C a significant increase in the sp2 bonding in the film is observed. No oxygen bonding is detected in the NEXAFS spectra, but we do observe an isosbestic point, demonstrating that the thermally driven sp3→sp2 conversion reaction occurs without passing through an intermediate transition state. This allows us to use NEXAFS spectra of thermally annealed ta-C films to quantitatively determine that the activatio...

Ultrananocrystalline Diamond Film as a Wear-Resistant and Protective Coating for Mechanical Seal Applications

Mechanical shaft seals used in pumps are critically important to the safe operation of the paper, pulp, and chemical process industry, as well as petroleum and nuclear power plants. Specifically, these seals prevent the leakage of toxic gases and hazardous chemicals to the environment and final products from the rotating equipment used in manufacturing processes. Diamond coatings have the potential to provide negligible wear, ultralow friction, and high corrosion resistance for the sliding surfaces of mechanical seals, because diamond exhibits outstanding tribological, physical, and chemical properties. However, diamond coatings produced by conventional chemical vapor deposition (CVD) exhibit high surface roughness (Ra ≥ 1 μm), which results in high wear of the seal counterface, leading to premature seal failure. To avoid this problem, we have developed an ultrananocrystalline diamond (UNCD) film formed by a unique CH4/Ar microwave plasma CVD method. This method yields extremely smooth diamond coatings with surface roughness Ra = 20–30 nm and an average grain size of 2–5 nm. We report the results of a systematic test program involving uncoated and UNCD-coated SiC shaft seals. Results confirmed that the UNCD-coated seals exhibited neither measurable wear nor any leakage during long-duration tests that took 21 days to complete. In addition, the UNCD coatings reduced the frictional torque for seal rotation by five to six times compared with the uncoated seals. This work promises to lead to rotating shaft seals with much improved service life, reduced maintenance cost, reduced leakage of environmentally hazardous materials, and increased energy savings. This technology may also have many other tribological applications involving rolling or sliding contacts.