Anke Hellmich

38.5L: Late-News Paper: PVD SiO2 for Metal-Oxide TFT Application

IGZO TFTs are promising candidates to drive future high performance AM LCDs. Since IGZO is known to be sensitive to hydrogen new deposition processes for the adjacent dielectric thin films are needed. We developed a full-reactive hydrogen-free sputter process for SiO2 which shows a performance comparable to the state-of-art CVD dielectrics. We demonstrated that our sputtered SiO2 thin films are stable to electric fields of above 10 MV/cm and show leakage currents below 10−8 A/cm2 at 6 MV/cm.