Hong Zhou

Tin-assisted growth of ε-Ga 2 O 3 film and the fabrication of photodetectors on sapphire substrate by PLD

The growth of single crystal e-Ga2O3 films under the assistance of Sn element was studied using pulsed laser deposition (PLD). The crystal structure, optical properties and chemical state of the element were investigated to analyze the influence of tin during the film epitaxy. There is a transition layer at the substrate and the e-Ga2O3 film interface. Increase in Sn atomic ratio will cause a rise in the transition layer thickness and the growth rate. In addition, due to the Sn atoms aggregation and the formation of clusters, the higher dark current (Idark), photocurrent (Iphoto) and responsivity (R) were achieved for the enhanced electron transportation in the e-Ga2O3 metal-semiconductor-metal (MSM) photodetectors. The optical bandgap Eg determined from R increased from 4.81eV to 4.88eV and 4.94eV with Sn contents increasing from 0.9% to 1.2% and 1.5%, consistent with the transmittance results.

A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V

In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier diode (SBD) on a silicon substrate with a low turn- ON voltage (<inline-formula> <tex-math notation=LaTeX>

Investigation of temperature dependent electrical characteristics on Au/Ni/β-Ga 2 O 3 Schottky diodes

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High-performance quasi-vertical GaN Schottky diode with low turn-on voltage

</tex-math></inline-formula>) of 0.35 V and tungsten (W) as the anode. Non-field-plated lateral GaN SBDs with the anode–cathode distances (<inline-formula> <tex-math notation=LaTeX>

Research on the growth of β-(AlGa)2O3 film and the analysis of electrical characteristics of Ni/Au Schottky contact using Tung's model

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Band alignments of SiO 2 and HfO 2 dielectrics with (Al x Ga 1-x ) 2 O 3 film (0≤ x ≤0.53) grown on Ga 2 O 3 buffer layer on sapphire

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Lateral

25~mu text{m}

\beta

</tex-math></inline-formula> demonstrate the reverse breakdown voltages of 0.6, 1.1, 1.25, 1.5, and 1.9 kV with the differential specific ON-resistances (<inline-formula> <tex-math notation=LaTeX>

-Ga 2 O 3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

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Integration and Electrical Properties of Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Film on Bulk

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