Anton Mauder

Influence of buffer structures on static and dynamic ruggedness of high voltage FWDs

It is required to design free wheeling diodes (FWDs) to be robust against static and dynamic avalanche. Therefore we investigate the effect of different buffer structures and the influence of various bulk parameters. By numerical device simulation the effect of the buffer doping, base doping and base width on the static and dynamic behaviour of FWDs is analysed. We show the promising features of well designed buffers for ruggedness and their coherences to the static reverse characteristics.

1700 V-IGBT3: field stop technology with optimized trench structure

The IGBT3 technology, which combines a specific trench cell and the field stop concept, was first introduced for devices with 1200 V blocking voltage. It is now transferred to higher blocking voltage ratings. A new series of 1700 V devices is introduced, which compared with conventional NPT (= non punch through) devices has greatly reduced static and dynamic losses and preserves the well known ruggedness of NPT devices. With this new 1700 V chip generation a new product line of modules with up to 50% higher current capability in the same housing is available.

trend setting for the high power applications in industry and traction

The paper presents the latest developments of IGBTs and fast switching diodes. A detailed investigation of repetitive short circuit behaviour of the trench and field stop IGBT is discussed. The new field stop IGBT was developed with almost MOS-like (tail-less) turn-off behaviour. Driven by these new IGBT technologies an increased stress on the free wheeling diodes is exerted. The paper shows in detail the switching performance and electric stress of a diode turned off by an ultra-fast switching IGBT. Based on the internal processes during commutation requirements for the application are concluded.

Dynamic behaviour and ruggedness of advanced fast switching IGBTs and diodes

A new IGBT module generation with a so called field stop IGBT in combination with a new freewheeling diode, based on the same principle of a vertical shrink by means of ultrathin wafer technology, is discussed. The results are very robust devices with almost ideal carrier concentrations for minimum on state voltages and switching losses.

The new IGBT generation a great improvement potential for motor drive systems

An electronic over current breaker (OCB) for DC-grids without the need of additional sensing circuitry is presented. The OCB consists of standard Si-MOSFETs and is cascoded with SiC-JFETs for increased blocking capability. The over current detection threshold can be adjusted in a wide range. Due to the lack of additional sensing circuitry, the detection and clearing of a fault current is extremely fast compared to conventional electronic circuit breakers and fail-safe with respect to the control.