Arno Wiedenhofer

Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

Device for producing and processing semiconductor substrates

Device for mounting a substrate and method for producing an insert for a susceptor

Method for producing an ohmic contact

Epitaxial growth of SiC in a single and a multi wafer vertical CVD system: a comparison.

Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide

Silicon carbide component, especially a Schottky diode, is produced by forming an ohmic contact before high temperature growth of an epitaxial layer

High temperature silicon carbide semiconductor substrate production and treatment apparatus, especially for silicon carbide epitaxy, has a susceptor completely covered by a cover plate and the substrate

Epitaxial Growth of SiC in a Vertical Multi-Wafer CVD System: Already Suited as Production Process?

SUBSTRATHALTERUNG FÜR SiC-EPITAXIE UND VERFAHREN ZUM HERSTELLEN EINES EINSATZES FÜR EINEN SUSZEPTOR