Arun Barvat

Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes

A simplistic design of a self-powered UV-photodetector device based on hybrid reduced-graphene-oxide (r-GO)/gallium nitride (GaN) is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ∼85% while the ohmic contact GaN photodetector with an identical device structure exhibits only ∼5.3% photosensivity at 350 nm illumination (18 μW/cm2). The responsivity and detectivity of the hybrid device were found to be 1.54 mA/W and 1.45 × 1010 Jones (cm Hz½ W−1), respectively, at zero bias with fast response (60 ms), recovery time (267 ms), and excellent repeatability. Power density-dependent responsivity and detectivity revealed ultrasensitive behaviour under low light conditions. The source of the observed self-powered effect in the hybrid photodetector is attributed to the depletion region formed at the r-GO and GaN quasi-ohmic interface.

Novel optically active lead-free relaxor ferroelectric (Ba0.6Bi0.2Li0.2)TiO3.

We discovered a near-room-temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositionally disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano-regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld analysis indicates mixed crystal structure with 80% tetragonal structure (space group P4mm) and 20% orthorhombic structure (space group Amm2), which is confirmed by the high resolution transmission electron diffraction (HRTEM). Dielectric constant and tangent loss dispersion with and without illumination of light obey nonlinear Vogel-Fulcher (VF) relations. The material shows slim polarization-hysteresis (P-E) loops and excellent displacement coefficients (d 33 ~ 233 pm V(-1)) near room temperature, which gradually diminish near the maximum dielectric dispersion temperature (T m ). The underlying physics for light-sensitive dielectric dispersion was probed by x-ray photon spectroscopy (XPS), which strongly suggests that mixed valence of bismuth ions, especially Bi(5+) ions, comprise most of the optically active centers. Ultraviolet photoemission measurements showed most of the Ti ions are in 4 +  states and sit at the centers of the TiO6 octahedra; along with asymmetric hybridization between O 2p and Bi 6s orbitals, this appears to be the main driving force for net polarization. This BBLT material may open a new path for environmental friendly lead-free relaxor-ferroelectric research.

Binary Multifunctional Ultrabroadband Self‐Powered g‐C3N4/Si Heterojunction High‐Performance Photodetector

Compact optical detectors with fast binary photoswitching over a broad range of wavelength are essential as an interconnect for any light-based parallel, real-time computing. Despite of the tremendous technological advancements yet there is no such single device available that meets the specifications. Here we report a multifunctional self-powered high-speed ultrabroadband (250-1650 nm) photodetector based on g-C3N4/Si hybrid 2D/3D structure. The device shows a novel binary photoswitching (change in current from positive to negative) in response to OFF/ON light illumination at small forward bias (<0.1 V) covering 250-1350 nm. At zero bias, the device displays an extremely high ON/OFF ratio of 1.2 x 10^5 under 680 nm (49 microWcm-2) illumination. The device also shows an ultrasensitive behaviour over the entire operating range at low light illuminations, with highest responsivity (1.2 AW-1), detectivity (2.8 x 10^14 Jones) and external quantum efficiency (213%) at 680 nm. The response and recovery speeds are typically 0.23 and 0.60 ms, respectively, under 288 Hz light switching frequency. Dramatically improved performance of our device is attributed to the heterojunctions formed by the ultrathin g-C3N4 nanosheets embedded in the Si surface.

Emerging photoluminescence from bilayer large-area 2D MoS2 films grown by pulsed laser deposition on different substrates

We report the growth of continuous large area bilayer films of MoS2 on different substrates by pulsed laser deposition (PLD). The growth parameters for PLD were modified in such a way that results in bilayer 2D-MoS2 films on both c-Al2O3 (0001) (sapphire) and SiO2/Si (SO) substrates. The bilayer large area crystalline nature of growth in the 2 H-phase is determined by Raman spectroscopy. Cross-sectional transmission electron microscopy confirms the distinct thinnest ordered layered structure of MoS2. Chemical analysis reveals an almost stoichiometric 2 H-phase on both the substrates. The photoluminescence intensities of both the films match very well with those of the corresponding exfoliated flakes, as well as chemical vapor deposited (CVD) films as reported in the literature. The in-situ post growth annealing with optimal film thickness acts as a solid phase epitaxy process which provides continuous crystalline layers with a smooth interface and regulates the photoluminescence properties. In contrast, t...

Polaron-electron assisted giant dielectric dispersion in SrZrO3 high-k dielectric

The SrZrO3 is a well known high-k dielectric constant (∼22) and high optical bandgap (∼5.8 eV) material and one of the potential candidates for future generation nanoelectronic logic elements (8 nm node technology) beyond silicon. Its dielectric behavior is fairly robust and frequency independent till 470 K; however, it suffers a strong small-polaron based electronic phase transition (Te) linking 650 to 750 K. The impedance spectroscopy measurements revealed the presence of conducting grains and grain boundaries at elevated temperature which provide energetic mobile charge carriers with activation energy in the range of 0.7 to 1.2 eV supporting the oxygen ions and proton conduction. X-ray photoemission spectroscopy measurements suggest the presence of weak non-stoichiometric O2− anions and hydroxyl species bound to different sites at the surface and bulk. These thermally activated charge carriers at elevated temperature significantly contribute to the polaronic based dielectric anomaly and conductivity. O...

Effect of substrate nitridation temperature on the persistent photoconductivity of unintentionally-doped GaN layer grown by PAMBE

The surface roughness and defect density of GaN epitaxial layers grown on c-plane sapphire substrate are investigated and found to be dependent on nitridation temperature. GaN epitaxial layers grown after nitridation of sapphire at 200°C have a higher defect density and higher surface roughness compared to the GaN layers grown at 646°C nitridation as confirmed by atomic force microscopy (AFM). The persistent photoconductivity (PPC) was observed in both samples and it was found to be decreasing with decreasing temperature in the range 150-300°C due to long carrier lifetime and high electron mobility at low temperature. The photoresponse of the GaN films grown in this study exhibit improved PPC due to their better surface morphology at 646°C nitrided sample. The point defects or extended microstructure defects limits the photocarrier lifetime and electron mobility at 200°C nitrided sample.