Prabir Pal

Chemical potential shift and gap-state formation in SrTiO3−δ revealed by photoemission spectroscopy

In this study, we report on investigations of the electronic structure of SrTiO3 annealed at temperature ranging between 550 and 840 °C in an ultrahigh vacuum. Annealing induced oxygen vacancies (Ovac) impart considerable changes in the electronic structure of SrTiO3. Using core-level photoemission spectroscopy, we have studied the chemical potential shift (Δμ) as a function of annealing temperature. The result shows that the chemical potential monotonously increases with electron doping in SrTiO3−δ. The monotonous increase of the chemical potential rules out the existence of electronic phase separation in the sample. Using valence band photoemission, we have demonstrated the formation of a low density of states at the near Fermi level electronic spectrum of SrTiO3−δ. The gap-states were observed by spectral weight transfer over a large energy scale of the stoichiometric band gap of SrTiO3 system leading finally to an insulator-metal transition. We have interpreted our results from the point of structural...

Photoconductivity and photo-detection response of multiferroic bismuth iron oxide

We report visible light detection with in-plane BiFeO3 (BFO) thin films grown on pre-patterned inter-digital electrodes. In-plane configured BFO film displayed photocurrents with a 40:1 photo-to-dark-current ratio and improved photo-sensing ability for >15 000 s (4 h) under small bias voltage (42 V). Nearly, sixty percent of the photo-induced charge carriers decay in 1.0 s and follow a double-exponential decay model. At 373 K, the effect of light does not significantly increase the dark current, probably due to reduced mobility. Sub-bandgap weak monochromatic light (1 mw/cm2) shows one fold increase in photo-charge carriers.

Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes

A simplistic design of a self-powered UV-photodetector device based on hybrid reduced-graphene-oxide (r-GO)/gallium nitride (GaN) is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ∼85% while the ohmic contact GaN photodetector with an identical device structure exhibits only ∼5.3% photosensivity at 350 nm illumination (18 μW/cm2). The responsivity and detectivity of the hybrid device were found to be 1.54 mA/W and 1.45 × 1010 Jones (cm Hz½ W−1), respectively, at zero bias with fast response (60 ms), recovery time (267 ms), and excellent repeatability. Power density-dependent responsivity and detectivity revealed ultrasensitive behaviour under low light conditions. The source of the observed self-powered effect in the hybrid photodetector is attributed to the depletion region formed at the r-GO and GaN quasi-ohmic interface.

Novel optically active lead-free relaxor ferroelectric (Ba0.6Bi0.2Li0.2)TiO3.

We discovered a near-room-temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositionally disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano-regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld analysis indicates mixed crystal structure with 80% tetragonal structure (space group P4mm) and 20% orthorhombic structure (space group Amm2), which is confirmed by the high resolution transmission electron diffraction (HRTEM). Dielectric constant and tangent loss dispersion with and without illumination of light obey nonlinear Vogel-Fulcher (VF) relations. The material shows slim polarization-hysteresis (P-E) loops and excellent displacement coefficients (d 33 ~ 233 pm V(-1)) near room temperature, which gradually diminish near the maximum dielectric dispersion temperature (T m ). The underlying physics for light-sensitive dielectric dispersion was probed by x-ray photon spectroscopy (XPS), which strongly suggests that mixed valence of bismuth ions, especially Bi(5+) ions, comprise most of the optically active centers. Ultraviolet photoemission measurements showed most of the Ti ions are in 4 +  states and sit at the centers of the TiO6 octahedra; along with asymmetric hybridization between O 2p and Bi 6s orbitals, this appears to be the main driving force for net polarization. This BBLT material may open a new path for environmental friendly lead-free relaxor-ferroelectric research.

Structural and electronic properties of epitaxial GaN layer grown on sapphire (0001) using laser molecular beam epitaxy

Epitaxial GaN films were grown on sapphire (0001) substrates by an ultra-high vacuum laser assisted molecular beam epitaxy (MBE) system using GaN solid target with laser energy density of ~3 J cm−2 at various growth conditions. The influence of growth temperature, layer thickness and growth rate on the structural properties of the GaN layers have been studied using high resolution x-ray diffraction, field emission scanning electron microscopy and scanning tunneling microscopy at room temperature. The epitaxial GaN layers grown at 700 °C exhibited good crystalline properties with a screw dislocation density of 3.1 × 108 cm−2 as calculated from the x-ray rocking curve measurements. The electronic properties such as core levels and valence band of GaN film were examined using x-ray photoelectron spectroscopy. Chemical composition of the GaN layer was determined using core level spectroscopy.

Photo-resistive properties of LaAl0.6Cr0.4O3/SrTiO3 heterostructures: a comparative study with LaAlO3/SrTiO3.

We report photoconductivity measurements on LaAl(1-x)Cr(x)O3/SrTiO3 (x=0, 0.4) heterostructures. A polar layer modification of metallic LaAlO3/SrTiO3 heterostructure with Cr in the Al sites resulted in an increased photo-response (PR) and relaxation time, in addition to a distinct shift in the spectral weight toward the red end of the spectrum. The visible light photoconductivity is explained by d-d photoconductivity of Cr3+ valence states of the x=0.4 sample. Besides the established UV sensitivity, we observe a weak peak in PR around 690 nm possibly emanating from the mid-gap states arising from oxygen vacancies.

Binary Multifunctional Ultrabroadband Self‐Powered g‐C3N4/Si Heterojunction High‐Performance Photodetector

Compact optical detectors with fast binary photoswitching over a broad range of wavelength are essential as an interconnect for any light-based parallel, real-time computing. Despite of the tremendous technological advancements yet there is no such single device available that meets the specifications. Here we report a multifunctional self-powered high-speed ultrabroadband (250-1650 nm) photodetector based on g-C3N4/Si hybrid 2D/3D structure. The device shows a novel binary photoswitching (change in current from positive to negative) in response to OFF/ON light illumination at small forward bias (<0.1 V) covering 250-1350 nm. At zero bias, the device displays an extremely high ON/OFF ratio of 1.2 x 10^5 under 680 nm (49 microWcm-2) illumination. The device also shows an ultrasensitive behaviour over the entire operating range at low light illuminations, with highest responsivity (1.2 AW-1), detectivity (2.8 x 10^14 Jones) and external quantum efficiency (213%) at 680 nm. The response and recovery speeds are typically 0.23 and 0.60 ms, respectively, under 288 Hz light switching frequency. Dramatically improved performance of our device is attributed to the heterojunctions formed by the ultrathin g-C3N4 nanosheets embedded in the Si surface.

Mn-induced modifications of Ga 3d photoemission from (Ga, Mn) As: evidence for long range effects

Using synchrotron based photoemission, we have investigated the Mn-induced changes in Ga 3d core level spectra from as-grown Ga(1-x)Mn(x)As. Although Mn is located in Ga substitutional sites, and therefore does not have any Ga nearest neighbors, the impact of Mn on the Ga core level spectra is pronounced even at Mn concentrations in the region of 0.5%. The analysis shows that each Mn atom affects a volume corresponding to a sphere with around 1.4 nm diameter.

Engineering bright fluorescent nitrogen-vacancy (NV) nano-diamonds: Role of low-energy ion-irradiation parameters

Bright emission from fluorescent nanodiamonds (FNDs) is highly desirable for optical bio-imaging applications. Here we report about optimized ion-irradiation and heat treatment conditions for efficient creation of Nitrogen-vacancy (NV) centers in high pressure high temperature (HPHT) grown type Ib Nanodiamond samples irradiated in energy range (20-50 KeV) and at varying fluence (1012-1016 ions/cm2). Different low energy ion irradiations are not detrimental for the crystallinity of nanodiamonds as confirmed by X-ray diffraction and HRTEM. The concentration of defects near the outer surface (non-diamond carbon) has been increased for highest ion dose (50 KeV, 1016 ions/cm2) as compared to lower ion dose (50 KeV, 1013 ions/cm2). The relative emission intensity of characteristic Zero-phonon lines of NV°, NV- centers as compared to broad emission in the range 550-750 nm was monitored with varying NV creation conditions. Sample irradiated at 50 KeV and with fluence of 1013 ions/cm2 show maximum emission in the phonon side band (550-750 nm) with maxima at 680 nm. These optimized ion irradiation conditions leads to the fabrication of 12.5±0.8 ppm concentration of NV- centers in nanodiamonds. This is desirable for their use as biomarker. This work provides a recipe for creating bright nanodiamonds for optical imaging applications.Bright emission from fluorescent nanodiamonds (FNDs) is highly desirable for optical bio-imaging applications. Here we report about optimized ion-irradiation and heat treatment conditions for efficient creation of Nitrogen-vacancy (NV) centers in high pressure high temperature (HPHT) grown type Ib Nanodiamond samples irradiated in energy range (20-50 KeV) and at varying fluence (1012-1016 ions/cm2). Different low energy ion irradiations are not detrimental for the crystallinity of nanodiamonds as confirmed by X-ray diffraction and HRTEM. The concentration of defects near the outer surface (non-diamond carbon) has been increased for highest ion dose (50 KeV, 1016 ions/cm2) as compared to lower ion dose (50 KeV, 1013 ions/cm2). The relative emission intensity of characteristic Zero-phonon lines of NV°, NV- centers as compared to broad emission in the range 550-750 nm was monitored with varying NV creation conditions. Sample irradiated at 50 KeV and with fluence of 1013 ions/cm2 show maximum emission in the ...

Purification method dependent fluorescence from nitrogen-vacancy (NV) centers of nano-diamonds

Fluorescent nanodiamonds (FNDs) with high photo stability at a subwavelength scale are highly desirable for nano-photonics and bio-imaging applications. Nanodiamonds (NDs) with embedded fluorescent color centers made by ion-implantation need to be purified to remove the sp2 layer on their surfaces which significantly degrades the optical properties. In this work, we discuss the structural and photo physical properties of NDs containing nitrogen-vacancy (NV) centers prepared by two different purification methods; chemical etching (H2SO4:HNO3) and air oxidation (450 °C). Chemically etched NDs show better uniformity in their shape, de-aggregation and higher dispersibility in water as compared to air oxidized ones. On the other hand it is observed that air oxidation is more effective in removing the sp2 layer and allows a higher fluorescence photon flux. Therefore, we suggest that air oxidation is more appropriate for bright fluorescent sources, and chemical etching is more appropriate for fluorescent markers in bio-imaging applications with high uniformity in shape and good dispersibility.