B. Peng

Measurements of near-ultimate strength for multiwalled carbon nanotubes and irradiation-induced crosslinking improvements

The excellent mechanical properties of carbon nanotubes are being exploited in a growing number of applications from ballistic armour to nanoelectronics. However, measurements of these properties have not achieved the values predicted by theory due to a combination of artifacts introduced during sample preparation and inadequate measurements. Here we report multiwalled carbon nanotubes with a mean fracture strength >100 GPa, which exceeds earlier observations by a factor of approximately three. These results are in excellent agreement with quantum-mechanical estimates for nanotubes containing only an occasional vacancy defect, and are approximately 80% of the values expected for defect-free tubes. This performance is made possible by omitting chemical treatments from the sample preparation process, thus avoiding the formation of defects. High-resolution imaging was used to directly determine the number of fractured shells and the chirality of the outer shell. Electron irradiation at 200 keV for 10, 100 and 1,800 s led to improvements in the maximum sustainable loads by factors of 2.4, 7.9 and 11.6 compared with non-irradiated samples of similar diameter. This effect is attributed to crosslinking between the shells. Computer simulations also illustrate the effects of various irradiation-induced crosslinking defects on load sharing between the shells.

Elasticity Size Effects in ZnO Nanowires−A Combined Experimental-Computational Approach

Understanding the mechanical properties of nanowires made of semiconducting materials is central to their application in nano devices. This work presents an experimental and computational approach to unambiguously quantify size effects on the Youngs modulus, E, of ZnO nanowires and interpret the origin of the scaling. A micromechanical system (MEMS) based nanoscale material testing system is used in situ a transmission electron microscope to measure the Youngs modulus of [0001] oriented ZnO nanowires as a function of wire diameter. It is found that E increases from approximately 140 to 160 GPa as the nanowire diameter decreases from 80 to 20 nm. For larger wires, a Youngs modulus of approximately 140 GPa, consistent with the modulus of bulk ZnO, is observed. Molecular dynamics simulations are carried out to model ZnO nanowires of diameters up to 20 nm. The computational results demonstrate similar size dependence, complementing the experimental findings, and reveal that the observed size effect is an outcome of surface reconstruction together with long-range ionic interactions.

Materials science and fabrication processes for a new MEMS technology based on ultrananocrystalline diamond thin films

Most MEMS devices are currently based on silicon because of the available surface machining technology. However, Si has poor mechanical and tribological properties which makes it difficult to produce high performance Si based MEMS devices that could work reliably, particularly in harsh environments; diamond, as a superhard material with high mechanical strength, exceptional chemical inertness, outstanding thermal stability and superior tribological performance, could be an ideal material for MEMS. A key challenge for diamond MEMS is the integration of diamond films with other materials. Conventional CVD thin film deposition methods produce diamond films with large grains, high internal stress, poor intergranular adhesion and very rough surfaces, and are consequently ill-suited for MEMS applications. Diamond-like films offer an alternative, but are deposited using physical vapour deposition methods unsuitable for conformal deposition on high aspect ratio features, and generally they do not exhibit the outstanding mechanical properties of diamond. We describe a new ultrananocrystalline diamond (UNCD) film technology based on a microwave plasma technique using argon plasma chemistries that produce UNCD films with morphological and mechanical properties that are ideally suited for producing reliable MEMS devices. We have developed lithographic techniques for the fabrication of UNCD MEMS components, including cantilevers and multilevel devices, acting as precursors to micro-bearings and gears, making UNCD a promising material for the development of high performance MEMS devices. We also review the mechanical, tribological, electronic transport, chemical and biocompatibility properties of UNCD, which make this an ideal material for reliable, long endurance MEMS device use.

Experimental-Computational Investigation of ZnO nanowires Strength and Fracture

An experimental and computational approach is pursued to investigate the fracture mechanism of [0001] oriented zinc oxide nanowires under uniaxial tensile loading. A MEMS-based nanoscale material testing stage is used in situ a transmission electron microscope to perform tensile tests. Experiments revealed brittle fracture along (0001) cleavage plane at strains as high as 5%. The measured fracture strengths ranged from 3.33 to 9.53 GPa for 25 different nanowires with diameters varying from 20 to 512 nm. Molecular dynamic simulations, using the Buckingham potential, were used to examine failure mechanisms in nanowires with diameters up to 20 nm. Simulations revealed a stress-induced phase transformation from wurtzite phase to a body-centered tetragonal phase at approximately 6% strain, also reported earlier by Wang et al. (1) The transformation is partial in larger nanowires and the transformed nanowires fail in a brittle manner at strains as high as 17.5%. The differences between experiments and computations are discussed in the context of (i) surface defects observed in the ZnO nanowires, and (ii) instability in the loading mechanism at the initiation of transformation.

Fracture strength of ultrananocrystalline diamond thin films—identification of Weibull parameters

The fracture strength of ultrananocrystalline diamond (UNCD) has been investigated using tensile testing of freestanding submicron films. Specifically, the fracture strength of UNCD membranes, grown by microwave plasma chemical vapor deposition (MPCVD), was measured using the membrane deflection experiment developed by Espinosa and co-workers. The data show that fracture strength follows a Weibull distribution. Furthermore, we show that the Weibull parameters are highly dependent on the seeding process used in the growth of the films. When seeding was performed with microsized diamond particles, using mechanical polishing, the stress resulting in a probability of failure of 63% was found to be 1.74 GPa, and the Weibull modulus was 5.74. By contrast, when seeding was performed with nanosized diamond particles, using ultrasonic agitation, the stress resulting in a probability of failure of 63%, increased to 4.13 GPa, and the Weibull modulus was 10.76. The tests also provided the elastic modulus of UNCD, whi...

Mechanical properties of ultrananocrystalline diamond thin films relevant to MEMS/NEMS devices

The mechanical properties of ultrananocrystalline diamond (UNCD) thin films were measured using microcantilever deflection and membrane deflection techniques. Bending tests on several free-standing UNCD cantilevers, 0.5 μm thick, 20 μm wide and 80 μm long, yielded elastic modulus values of 916–959 GPa. The tests showed good reproducibility by repeated testing on the same cantilever and by testing several cantilevers of different lengths. The largest source of error in the method was accurate measurement of film thickness. Elastic modulus measurements performed with the novel membrane deflection experiment (MDE), developed by Espinosa and co-workers, gave results similar to those from the microcantilever-based tests. Tests were performed on UNCD specimens grown by both micro and nano wafer-seeding techniques. The elastic modulus was measured to be between 930–970 GPa for the microseeding and between 945–963 GPa for the nanoseeding technique. The MDE test also provided the fracture strength, which for UNCD was found to vary from 0.89 to 2.42 GPa for the microseeded samples and from 3.95 to 5.03 for the nanoseeded samples. The narrowing of the elastic modulus variation and major increase in fracture strength is believed to result from a reduction in surface roughness, less stress concentration, when employing the nanoseeding technique. Although both methods yielded reliable values of elastic modulus, the MDE was found to be more versatile since it yielded additional information about the structure and material properties, such as strength and initial stress state.

Effect of Growth Orientation and Diameter on the Elasticity of GaN Nanowires. A Combined in Situ TEM and Atomistic Modeling Investigation

We characterized the elastic properties of GaN nanowires grown along different crystallographic orientations. In situ transmission electron microscopy tensile tests were conducted using a MEMS-based nanoscale testing system. Complementary atomistic simulations were performed using density functional theory and molecular dynamics. Our work establishes that elasticity size dependence is limited to nanowires with diameters smaller than 20 nm. For larger diameters, the elastic modulus converges to the bulk values of 300 GPa for c-axis and 267 GPa for a- and m-axis.

Elasticity, strength, and toughness of single crystal silicon carbide, ultrananocrystalline diamond, and hydrogen-free tetrahedral amorphous carbon

In this work, the authors report the mechanical properties of three emerging materials in thin film form: single crystal silicon carbide (3C-SiC), ultrananocrystalline diamond, and hydrogen-free tetrahedral amorphous carbon. The materials are being employed in micro- and nanoelectromechanical systems. Several reports addressed some of the mechanical properties of these materials but they are based in different experimental approaches. Here, they use a single testing method, the membrane deflection experiment, to compare these materials’ Young’s moduli, characteristic strengths, fracture toughnesses, and theoretical strengths. Furthermore, they analyze the applicability of Weibull theory [Proc. Royal Swedish Inst. Eng. Res. 153, 1 (1939); ASME J. Appl. Mech. 18, 293 (1951)] in the prediction of these materials’ failure and document the volume- or surface-initiated failure modes by fractographic analysis. The findings are of particular relevance to the selection of micro- and nanoelectromechanical systems m...

A new methodology to investigate fracture toughness of freestanding MEMS and advanced materials in thin film form

This work presents a novel membrane deflection fracture experiment (MDFE) to investigate the fracture toughness of microelectromechanical systems (MEMS) and other advanced materials in thin film form. It involves the stretching of freestanding thin-film membranes, in a fixed-fixed configuration, containing preexisting cracks. The fracture behavior of ultrananocrystalline diamond (UNCD), a material developed at Argonne National Laboratory, is investigated to illustrate the methodology. When the fracture initiates from sharp cracks, produced by indentation, the fracture toughness was found to be 4.5/spl plusmn/0.25 MP m/sup 1/2/. When the fracture initiates from blunt notches with radii about 100 nm, machined by focused ion beam (FIB), the mean value of the apparent fracture toughness was found to be 6.9 MPa m/sup 1/2/. Comparison of these two values, using the model proposed by Drory et al., provides a correction factor of two-thirds, which corresponds to a mean value of /spl rho//2x=1/2.

Epitaxially influenced boundary layer model for size effect in thin metallic films

It is shown that the size effect recently observed by Espinosa et al., [J. Mech. Phys. Solids51, 47 (2003)] in pure tension tests on free thin metallic films can be explained by the existence of a boundary layer of fixed thickness, located at the surface of the film that was attached onto the substrate during deposition. The boundary layer is influenced by the epitaxial effects of crystal growth on the dislocation density and texture (manifested by prevalent crystal plane orientations). This influence is assumed to cause significantly elevated yield strength. Furthermore, the observed gradual postpeak softening, along with its size independence, which is observed in short film strips subjected to pure tension, is explained by slip localization, originating at notch-like defects, and by damage, which can propagate in a stable manner when the film strip under pure tension is sufficiently thin and short. For general applications, the present epitaxially influenced boundary layer model may be combined with th...