Barry L. Chin
Applied Materials
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Publication
Featured researches published by Barry L. Chin.
international conference on solid state and integrated circuits technology | 2001
Peijun Ding; Ling Chen; Jianming Fu; Barry L. Chin; Roderick Craig Mosely; Zheng Xu; Gongda Yao
Advanced PVD technologies have been reviewed for copper barrier-seed applications for different device nodes. Each new device generation requires improved step coverage and reduced overhang. With each shift in deposition technology, there have been process and hardware advancements to meet decreasing feature sizes and increasing aspect ratios. The extension of PVD to 0.1 /spl mu/m has delayed the need for a CVD barrier and seed solution. However, PVDs limitations in step coverage, and the introduction of porous low-k dielectrics may necessitate a transition to CVD barriers below 0.10 /spl mu/m. The process integration of SIP-Cu and a proven barrier solution TDMAT (tetrakis dimethyl amino titanium)-based CVD TiSiN is also discussed in this paper.
Archive | 2004
Tony Chiang; Gongda Yao; Peijun Ding; Fusen E. Chen; Barry L. Chin; Gene Y. Kohara; Zheng Xu; Hong Zhang
Archive | 2001
Tony Chiang; Gongda Yao; Peijun Ding; Fusen E. Chen; Barry L. Chin; Gene Y. Kohara; Zheng Xu; Hong Zhang
Archive | 1997
Tony Chiang; Peijun Ding; Barry L. Chin
Archive | 1998
Tony Chiang; Peijun Ding; Barry L. Chin; Bingxi Sun
Archive | 1997
Peijun Ding; Tony Chiang; Barry L. Chin
Archive | 2002
Tony Chiang; Peijun Ding; Barry L. Chin
Archive | 2005
Peijun Ding; Zheng Xu; Hong Zhang; Xianmin Tang; Praburam Gopalraja; Suraj Rengarajan; John C. Forster; Jianming Fu; Tony Chiang; Gongda Yao; Fusen E. Chen; Barry L. Chin; Gene Y. Kohara
Archive | 2006
Tony Chiang; Gongda Yao; Peijun Ding; Fusen E. Chen; Barry L. Chin; Gene Y. Kohara; Zheng Xu; Hong Zhang
Archive | 2005
Peijun Ding; Zheng Xu; Hong Zhang; Xianmin Tang; Praburam Gopalraja; Suraj Rengarajan; John C. Forster; Jianming Fu; Tony Chiang; Gongda Yao; Fusen E. Chen; Barry L. Chin; Gene Y. Kohara