Bastien Bruneau

Ion flux asymmetry in radiofrequency capacitively-coupled plasmas excited by sawtooth-like waveforms

Using particle-in-cell simulations, we predict that it is possible to obtain a significant difference between the ion flux to the powered electrode and that to the grounded electrode—with about 50% higher ion flux on one electrode—in a geometrically symmetric, radiofrequency capacitively-coupled plasma reactor by applying a non-sinusoidal, ‘Tailored’ voltage waveform. This sawtooth-like waveform presents different rising and falling slopes over one cycle. We show that this effect is due to differing plasma sheath motion in front of each electrode, which induces a higher ionization rate in front of the electrode which has the fastest positive rising voltage. Together with the higher ion flux comes a lower voltage drop across the sheath, and therefore a reduced maximum ion bombardment energy; a result in contrast to typical process control mechanisms.

Growth mechanisms study of microcrystalline silicon deposited by SiH4/H2 plasma using tailored voltage waveforms

The use of Tailored Voltage Waveforms is a technique wherein one uses non-sinusoidal waveforms with a period equivalent to RF frequencies to excite a plasma. It has been shown to be an effective technique to decouple maximum Ion Bombardment Energy (IBE) from the ion flux at the surface of the electrodes. In this paper, we use it for the first time as a way to scan through the IBE in order to study the growth mechanism of hydrogenated microcrystalline silicon using a SiH4/H2 chemistry. We find that at critical energies, a stepwise increase in the amorphous to microcrystalline transition thickness is observed, as detected by Real Time Spectroscopic Ellipsometry. The same energy thresholds (30 eV and 70 eV) are found to be very influential on the final surface morphology of the samples, as observed by Atomic Force Microscopy. These thresholds correspond to SiHx+ bulk displacement (30 eV) and Hx+ (70 eV) surface displacement energies. A model is therefore proposed to account for the impact of these ions on th...

Ion Energy Threshold in Low-Temperature Silicon Epitaxy for Thin-Film Crystalline Photovoltaics

Plasma-enhanced chemical vapor deposition (PECVD) enables epitaxial silicon deposition for up to several micrometers and at low temperatures (as low as 150 °C). We present herein a detailed study of the effect of ion energy at high (above 2 torr) and low (below 1 torr) pressure, where the plasma and surface reactions are expected to be different, i.e., driven, respectively, by high-order and low-order silane precursors. We find a sharp energy threshold at low pressure, above which no epitaxy can be obtained, but this threshold is relaxed at high pressure. The occurrence of epitaxy breakdown is studied and compared in detail for these two different pressure regimes.

Tailored voltage waveform capacitively coupled plasmas in electronegative gases: frequency dependence of asymmetry effects

Capacitively coupled radio frequency plasmas operated in an electronegative gas (CF4) and driven by voltage waveforms composed of four consecutive harmonics are investigated for different fundamental driving frequencies using PIC/MCC simulations and an analytical model. As has been observed previously for electropositive gases, the application of peak- shaped waveforms (that are characterized by a strong amplitude asymmetry) results in the development of a DC self-bias due to the electrical asymmetry effect (EAE), which increases the energy of ions arriving at the powered electrode. In contrast to the electropositive case (Korolov et al 2012 J. Phys. D: Appl. Phys. 45 465202) the absolute value of the DC self- bias is found to increase as the fundamental frequency is reduced in this electronegative discharge, providing an increased range over which the DC self-bias can be controlled. The analytical model reveals that this increased DC self-bias is caused by changes in the spatial pro le and the mean value of the net charge density in the grounded electrode sheath. The spatio-temporally resolved simulation data show that as the frequency is reduced the grounded electrode sheath region becomes electronegative. The presence of negative ions in this sheath leads to very different dynamics of the power absorption of electrons, which in turn enhances the local electronegativity and plasma density via ionization and attachment processes. The ion ux to the grounded electrode (where the ion energy is lowest) can be up to twice that to the powered electrode. At the same time, while the mean ion energies at both electrodes are quite different, their ratio remains approximately constant for all base frequencies studied here.

Effect of Ion Energy on Microcrystalline Silicon Material and Devices: A Study Using Tailored Voltage Waveforms

The use of tailored voltage waveforms to excite a plasma has been shown to be an effective technique to decouple maximum ion energy from the ion flux on the electrode. We use it here as a way to scan through the maximum ion energy in order to study this quantitys role in the growth of μc-Si:H. We find that at critical energies (30 and 70 eV), a stepwise increase in the a-Si:H/μc-Si:H transition thickness is observed, together with change in the surface morphology. These thresholds correspond to SiHx+- and H3+ -induced displacement energies, respectively. A model is proposed to account for the impact of these ions on the morphology of μc-Si:H growth and is confirmed by comparison with epitaxial growth on a crystalline wafer.

Understanding the amorphous-to-microcrystalline silicon transition in SiF4/H2/Ar gas mixtures

We report on the growth of microcrystalline silicon films from the dissociation of SiF4/H2/Ar gas mixtures. For this growth chemistry, the formation of HF molecules provides a clear signature of the amorphous to microcrystalline growth transition. Depositing films from silicon tetrafluoride requires the removal of F produced by SiF4 dissociation, and this removal is promoted by the addition of H2 which strongly reacts with F to form HF molecules. At low H2 flow rates, the films grow amorphous as all the available hydrogen is consumed to form HF. Above a critical flow rate, corresponding to the full removal of F, microcrystalline films are produced as there is an excess of atomic hydrogen in the plasma. A simple yet accurate phenomenological model is proposed to explain the SiF4/H2 plasma chemistry in accordance with experimental data. This model provides some rules of thumb to achieve high deposition rates for microcrystalline silicon, namely, that increased RF power must be balanced by an increased H2 flow rate.

Capacitively coupled hydrogen plasmas sustained by tailored voltage waveforms: : excitation dynamics and ion flux asymmetry

Parallel plate capacitively coupled plasmas in hydrogen at relatively high pressure (n1 Torr) are excited with tailored voltage waveforms containing up to five frequencies. Predictions of a hybrid model combining a particle-in-cell simulation with Monte Carlo collisions and a fluid model are compared to phase resolved optical emission spectroscopy measurements, yielding information on the dynamics of the excitation rate in these discharges. When the discharge is excited with amplitude asymmetric waveforms, the discharge becomes electrically asymmetric, with different ion energies at each of the two electrodes. Unexpectedly, large differences in the H2+ fluxes to each of the two electrodes are caused by the different H3+ energies. When the discharge is excited with slope asymmetric waveforms, only weak electrical asymmetry of the discharge is observed. In this case, electron power absorption due to fast sheath expansion at one electrode is balanced by electron power absorption at the opposite electrode due to a strong electric field reversal.

Electron power absorption dynamics in capacitive radio frequency discharges driven by tailored voltage waveforms in CF4

The power absorption dynamics of electrons and the electrical asymmetry effect in capacitive radio-frequency plasmas operated in CF4 and driven by tailored voltage waveforms are investigated experimentally in combination with kinetic simulations. The driving voltage waveforms are generated as a superposition of multiple consecutive harmonics of the fundamental frequency of 13.56 MHz. Peaks/valleys and sawtooth waveforms are used to study the effects of amplitude and slope asymmetries of the driving voltage waveform on the electron dynamics and the generation of a DC self-bias in an electronegative plasma at different pressures. Compared to electropositive discharges, we observe strongly different effects and unique power absorption dynamics. At high pressures and high electronegativities, the discharge is found to operate in the drift-ambipolar (DA) heating mode. A dominant excitation/ionization maximum is observed during sheath collapse at the edge of the sheath which collapses fastest. High negative-ion densities are observed inside this sheath region, while electrons are confined for part of the RF period in a potential well formed by the ambipolar electric field at this sheath edge and the collapsed (floating potential) sheath at the electrode. For specific driving voltage waveforms, the plasma becomes divided spatially into two different halves of strongly different electronegativity. This asymmetry can be reversed electrically by inverting the driving waveform. For sawtooth waveforms, the discharge asymmetry and the sign of the DC self-bias are found to reverse as the pressure is increased, due to a transition of the electron heating mode from the α-mode to the DA-mode. These effects are interpreted with the aid of the simulation results.

Slope and amplitude asymmetry effects on low frequency capacitively coupled carbon tetrafluoride plasmas

We report investigations of capacitively coupled carbon tetrafluoride (CF4) plasmas excited with tailored voltage waveforms containing up to five harmonics of a base frequency of 5.5 MHz. The impact of both the slope asymmetry, and the amplitude asymmetry, of these waveforms on the discharge is examined by combining experiments with particle-in-cell simulations. For all conditions studied herein, the discharge is shown to operate in the drift-ambipolar mode, where a comparatively large electric field in the plasma bulk (outside the sheaths) is the main mechanism for electron power absorption leading to ionization. We show that both types of waveform asymmetries strongly influence the ion energy at the electrodes, with the particularity of having the highest ion flux on the electrode where the lowest ion energy is observed. Even at the comparatively high pressure (600 mTorr) and low fundamental frequency of 5.5 MHz used here, tailoring the voltage waveforms is shown to efficiently create an asymmetry of both the ion energy and the ion flux in geometrically symmetric reactors.

High efficiency thin film solar cells deposited at the amorphous-tomicrocrystalline transition using SiF 4 /H 2 /Ar gas mixtures

Microcrystalline silicon deposited from SiF4/H2/Ar gas mixtures is used as active absorbing layer in thin film solar cells. Best solar cells are made from active layers deposited at the amorphous-to-microcrystalline transition where only a few percent of amorphous phase is present. Based on mass spectrometry measurements, we propose a simple model which accounts for the relevant features of the complex plasma chemistry: namely the depletion of H2, the formation of HF molecules and the amorphous to microcrystalline silicon transition. The specificity of SiF4/H2/Ar plasma is the ability to tightly tune the transition irrespective of the control of the deposition rate. A high crystalline fraction allows thicknesses above 3 μm with a high short-circuit current and no deterioration of the open-circuit voltage.