Behzad Razavi

Design considerations for direct-conversion receivers

This paper describes the issues and tradeoffs in the design and monolithic implementation of direct-conversion receivers and proposes circuit techniques that can alleviate the drawbacks of this architecture. Following a brief study of heterodyne and image-reject topologies, the direct-conversion architecture is introduced and effects such as dc offset, I/Q mismatch, even-order distortion, flicker noise, and oscillator leakage are analyzed. Related design techniques for amplification and mixing, quadrature phase calibration, and baseband processing are also described.

A study of phase noise in CMOS oscillators

This paper presents a study of phase noise in two inductorless CMOS oscillators. First-order analysis of a linear oscillatory system leads to a noise shaping function and a new definition of Q. A linear model of CMOS ring oscillators is used to calculate their phase noise, and three phase noise phenomena, namely, additive noise, high-frequency multiplicative noise, and low-frequency multiplicative noise, are identified and formulated. Based on the same concepts, a CMOS relaxation oscillator is also analyzed. Issues and techniques related to simulation of noise in the time domain are described, and two prototypes fabricated in a 0.5-/spl mu/m CMOS technology are used to investigate the accuracy of the theoretical predictions. Compared with the measured results, the calculated phase noise values of a 2-GHz ring oscillator and a 900-MHz relaxation oscillator at 5 MHz offset have an error of approximately 4 dB.

A study of injection locking and pulling in oscillators

Injection locking characteristics of oscillators are derived and a graphical analysis is presented that describes injection pulling in time and frequency domains. An identity obtained from phase and envelope equations is used to express the requisite oscillator nonlinearity and interpret phase noise reduction. The behavior of phase-locked oscillators under injection pulling is also formulated.

Principles of data conversion system design

This advanced text and reference covers the design and implementation of integrated circuits for analog-to-digital and digital-toanalog conversion. It begins with basic concepts and systematically leads the reader to advanced topics, describing design issues and techniques at both circuit and system level. Gain a system-level perspective of data conversion units and their trade-offs with this state-of-the art book. Topics covered include: sampling circuits and architectures, D/A and A/D architectures; comparator and op amp design; calibration techniques; testing and characterization; and more!

Design techniques for high-speed, high-resolution comparators

Precision techniques for the design of comparators used in high-performance analog-to-digital converters employing parallel conversion stages are described. Following a review of conventional offset cancellation techniques, circuit designs achieving 12-b resolution in both BiCMOS and CMOS 5-V technologies are presented. The BiCMOS comparator consists of a preamplifier followed by two regenerative stages and achieves an offset of 200 mu V at a 10-MHz clock rate while dissipating 1.7 mW. In the CMOS comparator offset cancellation is used in both a single-stage preamplifier and a subsequent latch to achieve an offset of less than 300 mu V at comparison rates as high as 10 MHz, with a power dissipation of 1.8 mW. >

A 900 MHz/1.8 GHz CMOS receiver for dual band applications

This dual-band CMOS receiver for GSM and DCS1800 applications incorporates hardware sharing between two paths to reduce the number of off-chip components. The receiver is an extension of the Weaver single-sideband architecture. The Weaver architecture performs two consecutive quadrature downconversion operations on the signal and the image such that if the final outputs are added, the signal is obtained and the image is suppressed and if they are subtracted, the reverse occurs. The fact that the addition or subtraction of the outputs in the Weaver architecture can select or reject two bands symmetrically located around a local oscillator (LO) frequency provides the foundation for the work reported here.

Stacked inductors and transformers in CMOS technology

A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 to 266 nH and self-resonance frequencies of 11.2 to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. Stacked transformers are also introduced that achieve voltage gains of 1.8 to 3 at multigigahertz frequencies. The structures have been fabricated in standard digital CMOS technologies with four and five metal layers.

A study of oscillator jitter due to supply and substrate noise

This paper investigates the timing jitter of single-ended and differential CMOS ring oscillators due to supply and substrate noise. We calculate the jitter resulting from supply and substrate noise, show that the concept of frequency modulation can be applied, and derive relationships that express different types of jitter in terms of the sensitivity of the oscillation frequency to the supply or substrate voltage. Using examples based on measured results, we show that thermal jitter is typically negligible compared to supply- and substrate-induced jitter in high-speed digital systems. We also discuss the dependence of the jitter of differential CMOS ring oscillators on transistor gate width, power consumption, and the number of stages.

A 10-Gb/s CMOS clock and data recovery circuit with a half-rate linear phase detector

A 10-Gb/s phase-locked clock and data recovery circuit incorporates an interpolating voltage-controlled oscillator and a half-rate phase detector. The phase detector provides a linear characteristic while retiming and demultiplexing the data with no systematic phase offset. Fabricated in a 0.18-/spl mu/m CMOS technology in an area of 1.1/spl times/0.9 mm/sup 2/, the circuit exhibits an RMS jitter of 1 ps, a peak-to-peak jitter of 14.5 ps in the recovered clock, and a bit-error rate of 1.28/spl times/10/sup -6/, with random data input of length 2/sup 23/-1. The power dissipation is 72 mW from a 2.5-V supply.

A 40-GHz frequency divider in 0.18-/spl mu/m CMOS technology

A frequency divider employs resonance techniques by means of on-chip spiral inductors to operate at high speeds. Configured as two cascaded /spl divide/2 stages, the circuit achieves a frequency range of 2.3 GHz at 40 GHz while consuming 31 mW from a 2.5-V supply.