Bruce A. Wooley

The design of sigma-delta modulation analog-to-digital converters

The author examines the practical design criteria for implementing oversampled analog/digital converters based on second-order sigma-delta ( Sigma Delta ) modulation. Behavioral models that include representation of various circuit impairments are established for each of the functional building blocks comprising a second-order Sigma 2gD modulator. Extensive simulations based on these models are then used to establish the major design criteria for each of the building blocks. As an example, these criteria are applied to the design of a modulator that has been integrated in a 3- mu m CMOS technology. An experimental prototype operates from a single 5-V supply, dissipates 12 mW, occupies an area of 0.77 mm/sup 2/, and has achieved a measured dynamic range of 89 dB. >

Experimental results and modeling techniques for substrate noise in mixed-signal integrated circuits

An experimental technique is described for observing the effects of switching transients in digital MOS circuits that perturb analog circuits integrated on the same die by means of coupling through the substrate. Various approaches to reducing substrate crosstalk (the use of physical separation of analog and digital circuits, guard rings, and a low-inductance substrate bias) are evaluated experimentally for a CMOS technology with a substrate comprising an epitaxial layer grown on a heavily doped bulk wafer. Observations indicate that reducing the inductance in the substrate bias is the most effective. Device simulations are used to show how crosstalk propagates via the heavily doped bulk and to predict the nature of substrate crosstalk in CMOS technologies integrated in uniform, lightly doped bulk substrates, showing that in such cases the substrate noise is highly dependent on layout geometry. A method of including substrate effects in SPICE simulations for circuits fabricated on epitaxial, heavily doped substrates is developed. >

A Two's Complement Parallel Array Multiplication Algorithm

An algorithm for high-speed, twos complement, m-bit by n-bit parallel array multiplication is described. The twos complement multiplication is converted to an equivalent parallel array addition problem in which each partial product bit is the AND of a multiplier bit and a multiplicand bit, and the signs of all the partial product bits are positive.

Design techniques for high-speed, high-resolution comparators

Precision techniques for the design of comparators used in high-performance analog-to-digital converters employing parallel conversion stages are described. Following a review of conventional offset cancellation techniques, circuit designs achieving 12-b resolution in both BiCMOS and CMOS 5-V technologies are presented. The BiCMOS comparator consists of a preamplifier followed by two regenerative stages and achieves an offset of 200 mu V at a 10-MHz clock rate while dissipating 1.7 mW. In the CMOS comparator offset cancellation is used in both a single-stage preamplifier and a subsequent latch to achieve an offset of less than 300 mu V at comparison rates as high as 10 MHz, with a power dissipation of 1.8 mW. >

A 1.8-V digital-audio sigma-delta modulator in 0.8-/spl mu/m CMOS

Oversampling techniques based on sigma-delta (/spl Sigma//spl Delta/) modulation offer numerous advantages for the realization of high-resolution analog-to-digital (A/D) converters in low-voltage environment. This paper examines the design and implementation of a CMOS /spl Sigma//spl Delta/ modulator for digital-audio A/D conversion that operates from a single 1.8-V power supply. A cascaded modulator that maintains a large full-scale input range while avoiding signal clipping at internal nodes is introduced. The experimental modulator has been designed with fully differential switched-capacitor integrators employing different input and output common-mode levels and boosted clock drivers in order to facilitate low voltage operation. Precise control of common-mode levels, high power supply noise rejection, and low power dissipation are obtained through the use of two-stage, class A/AB operational amplifiers. At a sampling rate of 4 MHz and an oversampling ratio of 80, an implementation of the modulator in a 0.8-/spl mu/m CMOS technology with metal-to-polycide capacitors and NMOS and PMOS threshold voltages of +0.65 V and -0.75 V, respectively, achieves a dynamic range of 99 dB at a Nyquist conversion rate of 50 kHz. The modulator can operate from supply voltages ranging from 1.5-2.5 V, occupies an active area of 1.5 mm/sup 2/, and dissipates 2.5 mW from a 1.8-V supply.

A 5-GHz CMOS transceiver for IEEE 802.11a wireless LAN systems

A 5-GHz transceiver comprising the RF and analog circuits of an IEEE 802.11a-compliant WLAN has been integrated in a 0.25-/spl mu/m CMOS technology. The IC has 22-dBm maximum transmitted power, 8-dB overall receive-chain noise figure and -112-dBc/Hz synthesizer phase noise at 1-MHz frequency offset.

A 50-MHz multibit sigma-delta modulator for 12-b 2-MHz A/D conversion

The authors examine the application of oversampling techniques to analog-to-digital conversion at rates exceeding 1 MHz. A cascaded multibit sigma-delta ( Sigma Delta ) modulator that substantially reduces the oversampling ratio required for 12-b conversion while avoiding stringent component matching requirements is introduced. Issues concerning the design and implementation of the modulator are presented. At a sampling rate of 50 MHz and an oversampling ratio of 24, an implementation of the modulator in a 1- mu m CMOS technology achieves a dynamic range of 74 dB at a Nyquist conversion rate of 2.1 MHz. The experimental modulator is a fully differential circuit that operates from a single 5-V power supply and does not require calibration or component trimming. >

A 2.5-V sigma-delta modulator for broadband communications applications

Oversampled sigma-delta (EA) modulators offer numerous advantages for the realization of high-resolution analog-to-digital (A/D) converters. This paper explores how oversampling and feedback can be employed in high-resolution /spl Sigma//spl Delta/ modulators to extend the signal bandwidth into the range of several megahertz when the oversampling ratio is constrained by technology limitations. A 2-2-1 cascaded multibit architecture suitable for operation from a 2.5-V power supply is presented, and a linearization technique referred to as partitioned data weighted averaging is introduced to suppress in-band digital-to-analog converter (DAC) errors. An experimental prototype based on the proposed topology has been integrated in a 0.5-/spl mu/m double-poly triple-metal CMOS technology. Fully differential double-sampled switched-capacitor integrators enable the modulator to achieve 95-dB dynamic range at a 4-Msample/s Nyquist conversion rate with an oversampling ratio of 16. The experimental modulator dissipates 150 mW from a 2.5-V supply.

A 900-MHz RF front-end with integrated discrete-time filtering

Discrete-time analog filters, rather than off-chip components, have been used to perform frequency selection and down conversion in the integrated front-end for a 900-MHz RF receiver. The first stage of frequency down conversion is implemented with a subsampling switched-capacitor sample-and-hold circuit clocked at 78 MHz. Subsequent stages of discrete-time filtering are realized using switched-capacitor biquadratic filters. An experimental prototype of the front-end had been integrated in a 0.6-/spl mu/m BiCMOS technology. The circuit provides a system gain of 36 dB and 32 dB suppression of interfering channels over a 40 MHz bandwidth. Referred to the system input, the third-order intercept-point is -16 dBm, and the spot input-referred noise is -82 dBm over a 30 kHz bandwidth. The experimental circuit dissipates 90 mW from a 3.3-V supply and occupies an active area of 1.9/spl times/1.9 mm/sup 2/.

A Digitally Modulated Polar CMOS Power Amplifier With a 20-MHz Channel Bandwidth

This paper presents a CMOS RF power amplifier that employs a digital polar architecture to improve the overall power efficiency when amplifying signals with high linearity requirements. The power amplifier comprises 64 parallel RF amplifiers that are driven by a constant envelope RF phase-modulated signal. The unit amplifiers are digitally activated by a 6-bit envelope code to construct a non-constant envelope RF output, thereby performing a digital-to-RF conversion. In order to suppress the spectral images resulting from the discrete-time to continuous-time conversion of the envelope, the use of oversampling and four-fold linear interpolation is explored. An experimental prototype of the polar amplifier has been integrated in a 0.18- mum CMOS technology, occupies a total die area of 1.8 mm2 , operates at a 1.6-GHz carrier frequency with a channel bandwidth of 20 MHz. For an OFDM signal, it achieves a power-added efficiency of 6.7% with an EVM of - 26.8 dB while delivering 13.6 dBm of linear output power and drawing 145 mA from a 1.7-V supply.