Benjamin J. Wieder

Dirac Line Nodes in Inversion-Symmetric Crystals

We propose and characterize a new Z2 class of topological semimetals with a vanishing spin-orbit interaction. The proposed topological semimetals are characterized by the presence of bulk one-dimensional (1D) Dirac line nodes (DLNs) and two-dimensional (2D) nearly flat surface states, protected by inversion and time-reversal symmetries. We develop the Z2 invariants dictating the presence of DLNs based on parity eigenvalues at the parity-invariant points in reciprocal space. Moreover, using first-principles calculations, we predict DLNs to occur in Cu_{3}N near the Fermi energy by doping nonmagnetic transition metal atoms, such as Zn and Pd, with the 2D surface states emerging in the projected interior of the DLNs. This Letter includes a brief discussion of the effects of spin-orbit interactions and symmetry breaking as well as comments on experimental implications.

Double Dirac Semimetals in Three Dimensions

We study a class of Dirac semimetals that feature an eightfold-degenerate double Dirac point. We show that 7 of the 230 space groups can host such Dirac points and argue that they all generically display linear dispersion. We introduce an explicit tight-binding model for space groups 130 and 135. Space group 135 can host an intrinsic double Dirac semimetal with no additional states at the Fermi energy. This defines a symmetry-protected topological critical point, and we show that a uniaxial compressive strain applied in different directions leads to topologically distinct insulating phases. In addition, the double Dirac semimetal can accommodate topological line defects that bind helical modes. Connections are made to theories of strongly interacting filling-enforced semimetals, and potential materials realizations are discussed.

Filling-Enforced Magnetic Dirac Semimetals in Two Dimensions

Filling-enforced Dirac semimetals, or those required at specific fillings by the combination of crystalline and time-reversal symmetries, have been proposed in numerous materials. However, Dirac points in these materials are not generally robust against breaking or modifying time-reversal symmetry. We present a new class of two-dimensional Dirac semimetal protected by the combination of crystal symmetries and a special, antiferromagnetic time-reversal symmetry. Systems in this class of magnetic layer groups, while having broken time-reversal symmetry, still respect the operation of time-reversal followed by a half-lattice translation. In contrast to 2D time-reversal-symmetric Dirac semimetal phases, this magnetic Dirac phase is capable of hosting just a single isolated Dirac point at the Fermi level, one that can be stabilized solely by symmorphic crystal symmetries. We find that this Dirac point represents a new quantum critical point, existing at the boundary between Chern insulating, antiferromagnetic topological crystalline insulating, and trivial insulating phases, and we discuss its relationship with condensed matter fermion doubling theorems. We present density functional theoretic calculations which demonstrate the presence of these 2D magnetic Dirac points in FeSe monolayers and discuss the implications for engineering quantum phase transitions in these materials.

Signatures of Majorana fermions in topological insulator Josephson junction devices

We study theoretically the electrical current and low-frequency noise for a linear Josephson junction structure on a topological insulator, in which the superconductor forms a closed ring and currents are injected from normal regions inside and outside the ring. We find that this geometry offers a signature for the presence of gapless 1D Majorana fermion modes that are predicted in the channel when the phase difference \phi, controlled by the magnetic flux through the ring, is \pi. We show that for low temperature the linear conductance jumps when \phi\ passes through \pi, accompanied by non-local correlations between the currents from the inside and outside of the ring. We compute the dependence of these features on temperature, voltage and linear dimensions, and discuss the implications for experiments.

Critical behavior of four-terminal conductance of bilayer graphene domain walls

Bilayer graphene in a perpendicular electric field can host domain walls between regions of reversed field direction or interlayer stacking. The gapless modes propagating along these domain walls, while not strictly topological, nevertheless have interesting physical properties, including valley-momentum locking. A junction where two domain walls intersect forms the analog of a quantum point contact. We study theoretically the critical behavior of this junction near the pinch-off transition, which is controlled by two separate classes of nontrivial quantum critical points. For strong interactions, the junction can host phases of unique charge and valley conductances. For weaker interactions, the low-temperature charge conductance can undergo one of two possible quantum phase transitions, each characterized by a specific critical exponent and a collapse to a universal scaling function, which we compute.