Bernat Bozzo

Strain-induced perpendicular magnetic anisotropy in La2CoMnO6−ε thin films and its dependence on film thickness

Ferromagnetic insulating La

Strain-induced perpendicular magnetic anisotropy in La

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CoMnO

CoMnO

_{6-\epsilon}

_{6-\epsilon}

(LCMO) epitaxial thin films grown on top of SrTiO

thin films and its dependence with film thickness

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Critical current determination of artificially welded HTS samples by in-field Hall mapping technique

(001) substrates presents a strong magnetic anisotropy favoring the out of plane orientation of the magnetization with a strong anisotropy field (

One-Step Route to Iron Oxide Hollow Nanocuboids by Cluster Condensation: Implementation in Water Remediation Technology

\sim 70

Oxygenation Thermogravimetry of TSMG YBCO Bulk Superconductor

kOe for film thickness of about 15 nm) and with a coercive field of about 10 kOe. The anisotropy can be tuned by modifying the oxygen content of the film which indirectly has two effects on the unit cell: i) change of the orientation of the LCMO crystallographic axis over the substrate (from c in-plane to c out-of-plane) and ii) shrinkage of the out of plane cell parameter, which implies increasing tensile strain of the films. In contrast, LCMO films grown on (LaAlO

Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element

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