Bernd Eisener
Infineon Technologies
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Publication
Featured researches published by Bernd Eisener.
european microwave integrated circuits conference | 2006
Hans-Peter Forstner; Alfons Dehe; Bernd Eisener; Klaus Ettinger; Udo Gerlach; Andrea Jentzsch; Wolfgang Klein; Christian Lehrer
A dual band low noise and low cost wireless LAN amplifier has been fully integrated in a commercial SiGe:C bipolar technology using a highly doped silicon substrate. Outstanding low noise figures of 0.9dB at 2.4GHz and 1.45dB at 6GHz have been measured. Current consumption is 11mA in the low band and 17 mA in the high band, out off a voltage supply of 3.2V, and stabilized by a bandgap voltage reference. Low band gain is 13.5dB with an IP-1dB of -7dBm and IIP3 of +4dBm. High band gain is 20dB with an IP-1dB of -9dBm and IIP3 of +3dBm
Archive | 2008
Sven Albers; Klaus Diefenbeck; Bernd Eisener; Gernot Langguth; Christian Lehrer; Karlheinz Malek; Eberhard Rohrer
Archive | 2013
Detlef Wilhelm; Guenter Pfeifer; Bernd Eisener; Dieter Claeys
Archive | 2004
Cartens Ahrens; Ulf Bartl; Bernd Eisener; Wolfgang Hartung; Christian Herzum; Raidmund Peichl; Stefan Pompl; Hubert Werthmann
bipolar/bicmos circuits and technology meeting | 2007
Bernhard Sogl; Winfried Bakalski; Markus Zannoth; Michael Asam; Boris Kapfelsperger; Jorg Berkner; Bernd Eisener; Wilfried Osterreicher; Erwin Rampf; Arpad L. Scholtz; Bernd-Ulrich Klepser
Archive | 2003
Carsten Ahrens; Bernd Eisener; Wolfgang Hartung; Christian Herzum
Archive | 2013
Dieter Claeys; Bernd Eisener; Guenter Pfeifer; Detlef Wilhelm
Archive | 2012
Dieter Claeys; Bernd Eisener; Guenter Pfeifer; Detlef Wilhelm
Archive | 2012
Dieter Claeys; Bernd Eisener; Guenter Pfeifer; Detlef Wilhelm
bipolar/bicmos circuits and technology meeting | 2008
Winfried Bakalski; Bernhard Sogl; Markus Zannoth; Michael Asam; Boris Kapfelsperger; Jorg Berkner; Bernd Eisener; Wolfgang Thomann; Siegfried Marcon; Wilfried Osterreicher; Ewa Napieralska; Erwin Rampf; Arpad L. Scholtz; Bernd-Ulrich Klepser
