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Publication
Featured researches published by Bertrand M. Grossman.
Solid-state Electronics | 1984
Bertrand M. Grossman; Wei Hwang; Frank Fu Fang
Abstract A design for an ultra-small MOSFET is presented. MOSFETs with submicron channel lengths ( L ≲ 0.25 μm ) that operate with controlled punchthrough current are analyzed by two-dimensional numerical modeling. Current-voltage characteristics for subthreshold, nonsaturated and saturated regions of operation were obtained at various temperatures for devices of different channel length. The results indicate that device current is due to barrier-limited, space-charge-limited and surface-inversion conduction processes.
Archive | 1997
Bertrand M. Grossman; Clifford A. Pickover; Michael Stephen Schwartz
Archive | 1994
Bertrand M. Grossman; Clifford A. Pickover
Archive | 1995
Bertrand M. Grossman; Clifford A. Pickover
Archive | 1984
Frank Fu Fang; Bertrand M. Grossman; Wei Hwang
Archive | 1998
Calvin J. Bittner; Bertrand M. Grossman; Richard D. Jenks; Stephen M. Watt; Richard Q. Williams
Archive | 1985
Frank Fu Fang; Bertrand M. Grossman
Archive | 1999
Bertrand M. Grossman; James Gordon McLean; Clifford A. Pickover; Michael Stephen Schwartz; Daniel James Winarski; クリフォード・エイ・ピックオーバー; ジェームス・ゴードン・マックリーン; ダニエル・ジェームス・ワイナルスキー; バートランド・エム・グロスマン; マイケル・ステファン・シュワルツ
Archive | 1985
Frank Fu Fang; Bertrand M. Grossman; Wei Hwang
Archive | 1986
Frank Fu Fang; Bertrand M. Grossman
