Bhadri N. Varadarajan

METHODS OF ENCAPSULATION

Methods of encapsulation are provided. Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300 DEG C are provided herein. The methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300 DEG C.

Interest of SiCO low k=4.5 spacer deposited at low temperature (400°C) in the perspective of 3D VLSI integration

For the first time, the interest of a new SiCO low-k spacer material deposited at 400°C is evaluated in the perspective of a 3D VLSI integration. The benefits of SiCO low-k (4.5 vs 7 for SiN) value is preserved throughout the whole integration and translates into a 5% decrease for both effective capacitance and delay of FO3 Ring Oscillators in a 14FDSOI technology. In addition, a NMOS breakdown voltage improvement of 3.5V and a decrease in leakage current of 0.7 decade is demonstrated on thick oxide devices. This electrical performance together with the low temperature deposition makes SiCO a very appealing candidate for 3D VLSI in a CoolCube™ integration scheme.