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Dive into the research topics where Adrien Lavoie is active.

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Featured researches published by Adrien Lavoie.


ACS Applied Materials & Interfaces | 2014

Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride

Ciarán A. Murray; Simon D. Elliott; Dennis M. Hausmann; Jon Henri; Adrien Lavoie

Atomic layer deposition (ALD) of highly conformal, silicon-based dielectric thin films has become necessary because of the continuing decrease in feature size in microelectronic devices. The ALD of oxides and nitrides is usually thought to be mechanistically similar, but plasma-enhanced ALD of silicon nitride is found to be problematic, while that of silicon oxide is straightforward. To find why, the ALD of silicon nitride and silicon oxide dielectric films was studied by applying ab initio methods to theoretical models for proposed surface reaction mechanisms. The thermodynamic energies for the elimination of functional groups from different silicon precursors reacting with simple model molecules were calculated using density functional theory (DFT), explaining the lower reactivity of precursors toward the deposition of silicon nitride relative to silicon oxide seen in experiments, but not explaining the trends between precursors. Using more realistic cluster models of amine and hydroxyl covered surfaces, the structures and energies were calculated of reaction pathways for chemisorption of different silicon precursors via functional group elimination, with more success. DFT calculations identified the initial physisorption step as crucial toward deposition and this step was thus used to predict the ALD reactivity of a range of amino-silane precursors, yielding good agreement with experiment. The retention of hydrogen within silicon nitride films but not in silicon oxide observed in FTIR spectra was accounted for by the theoretical calculations and helped verify the application of the model.


Journal of Vacuum Science and Technology | 2018

In situ XPS study of low temperature atomic layer deposition of B2O3 films on Si using BCl3 and H2O precursors

Aparna Pilli; Jessica Jones; Veronica Lee; Natasha Chugh; Jeffry A. Kelber; Frank L. Pasquale; Adrien Lavoie

In this study, atomic layer deposition (ALD) of nanoscale boron oxide (B2O3) films on Si using BCl3/H2O precursors at room temperature was investigated using in situ x-ray photoelectron spectroscopy (XPS). B2O3 thin films are of considerable interest in ultra-shallow Si doping applications, including high aspect ratio FinFET structures, where film conformality and precise thickness control are crucial. ALD is therefore of particular interest for such applications. XPS data demonstrate that initial BCl3 exposures on Si at room temperature are self-limiting and are accompanied by partial B-Cl dissociation and Cl-Si formation. H2O exposures >1.7 × 108 Langmuir at room temperature removed Cl from B sites, but failed to remove Cl from the Cl-Si species. ALD-type growth of B2O3 was observed with an average growth rate of ∼2.5 A/cycle and without further increase in the Cl content. The initial Cl contamination was due to Cl-Si bond formation at the interface, without Cl incorporation into the oxide film. The role of Cl in the inhibition of oxide film growth was further investigated by the reactions of BCl3/O2 on SiO2 at room temperature and 650 K. BCl3/O2 precursors exhibit negligible B2O3 growth at room temperature. At 650 K, B2O3 growth was observed with a decreasing growth rate per BCl3/O2 cycle, corresponding to an increase in the Cl:B atomic ratio. These data indicate that room temperature ALD using BCl3/H2O precursors is a potential route toward the formation of uniform B2O3 films for shallow Si doping applications, but that Cl-Si formation significantly impacts initial oxide nucleation and growth.In this study, atomic layer deposition (ALD) of nanoscale boron oxide (B2O3) films on Si using BCl3/H2O precursors at room temperature was investigated using in situ x-ray photoelectron spectroscopy (XPS). B2O3 thin films are of considerable interest in ultra-shallow Si doping applications, including high aspect ratio FinFET structures, where film conformality and precise thickness control are crucial. ALD is therefore of particular interest for such applications. XPS data demonstrate that initial BCl3 exposures on Si at room temperature are self-limiting and are accompanied by partial B-Cl dissociation and Cl-Si formation. H2O exposures >1.7 × 108 Langmuir at room temperature removed Cl from B sites, but failed to remove Cl from the Cl-Si species. ALD-type growth of B2O3 was observed with an average growth rate of ∼2.5 A/cycle and without further increase in the Cl content. The initial Cl contamination was due to Cl-Si bond formation at the interface, without Cl incorporation into the oxide film. The rol...


Archive | 2011

Plasma activated conformal film deposition

Adrien Lavoie; Shankar Swaminathan; Hu Kang; Ramesh Chandrasekharan; Tom Dorsh; Dennis M. Hausmann; Jon Henri; Thomas Jewell; Ming Li; Bryan Schlief; Antonio Xavier; Thomas W. Mountsier; Bart van Schravendijk; Easwar Srinivasan; Mandyam Sriram


Archive | 2012

Conformal doping via plasma activated atomic layer deposition and conformal film deposition

Shankar Swaminathan; Mandyam Sriram; Bart van Schravendijk; Pramod Subramonium; Adrien Lavoie


Archive | 2012

Methods for uv-assisted conformal film deposition

Adrien Lavoie; Bhadri N. Varadarajan; Jon Henri; Dennis M. Hausmann


Archive | 2013

SEQUENTIAL PRECURSOR DOSING IN AN ALD MULTI-STATION/BATCH REACTOR

Ramesh Chandrasekharan; Adrien Lavoie; Damien Slevin; Karl Leeser


Archive | 2013

Gapfill of variable aspect ratio features with a composite PEALD and PECVD method

Hu Kang; Shankar Swaminathan; Jun Qian; Wanki Kim; Dennis M. Hausmann; Bart van Schravendijk; Adrien Lavoie


Archive | 2013

High pressure, high power plasma activated conformal film deposition

Shankar Swaminathan; Frank L. Pasquale; Adrien Lavoie; Karl Leeser


Archive | 2013

Methods for depositing films on sensitive substrates

Hu Kang; Shankar Swaminathan; Adrien Lavoie; Jon Henri


Archive | 2013

Sub-saturated atomic layer deposition and conformal film deposition

Shankar Swaminathan; Hu Kang; Adrien Lavoie

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