Binghua Hu

A Rugged LDMOS for LBC5 Technology

This paper presents a new method of enhancing the SOA of n-channel Ldmos transistors. Attention is focused on those applications where “Electrical SOA” is important and where the power pulse time is typically a few µs or less. Typical applications include gate drives, H-bridge commutation, and self-protection against ESD pulses.

Analog Capacitor Integration Challenges

This paper discusses the challenges of making a MIM capacitor using a standard back end of line metal stack and a single additional mask. This required development of a capacitor dielectric would also serve as an antireflective coating for patterning 0.25 m metal interconnect lines or smaller. The paper also focuses on the characteristics of the analog capacitors. By improving this dual purpose oxide/SiON/oxide sandwich dielectric layer with special reflectivity properties, this novel integration forms a capacitor which possesses a combination of good voltage linearity or voltage coefficient, low dispersive behavior and hysteresis, and finally excellent matching with low leakage.