Binn Kim
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Publication
Featured researches published by Binn Kim.
IEEE Electron Device Letters | 2012
Binn Kim; Hyung Nyuck Cho; Woo Seok Choi; Seung-Hee Kuk; Yong Ho Jang; Juhn-Suk Yoo; Soo Young Yoon; Myungchul Jun; Yong-Kee Hwang; Min-Koo Han
We proposed and fabricated a depletion-mode amorphous indium-gallium-zinc-oxide thin-film transistor gate driver without any additional signals. The proposed gate driver successfully exhibited a high-voltage output pulse without distortion at a clock frequency of 100 kHz, which is enough to drive a high-frequency panel with a frame rate of ~360 Hz and a resolution of full high definition. The experimental and simulation results showed that the gate driver would be highly reliable under light illumination. Also, the output waveform of the gate driver was not distorted after 240-h driving under 450-nm illumination with an intensity of 1 mW/ cm2 at 60°C.
IEEE Electron Device Letters | 2012
Binn Kim; Hyung Nyuck Cho; Woo Seok Choi; Seung-Hee Kuk; Juhn-Suk Yoo; Soo Young Yoon; Myungchul Jun; Yong-Kee Hwang; Min-Koo Han
We proposed and fabricated a new depletion-mode amorphous indium-gallium-zinc-oxide thin-film-transistor (TFT) shift register with a node-shared structure. The proposed shift register requires 14 TFTs, 3 clock lines, and 3 power source lines for two output pulses, whereas the previous shift registers consisted of more than 22 TFTs, 4 clock lines, and 6 power source lines. The experimental results showed that the proposed shift register successfully generated two output pulses at one stage without any distortion. The circuit area of the proposed shift register is reduced by about 30%, as compared with that of the previous one.
SID Symposium Digest of Technical Papers | 2008
Yong Ho Jang; Soo Young Yoon; Kwon-Shik Park; Hae Yeol Kim; Binn Kim; Mindoo Chun; Hyung Nyuck Cho; Seung Chan Choi; Taewoong Moon; Chang il Ryoo; Nam Wook Cho; Sung Ki Kim; Chang-Dong Kim; In Byeong Kang
A novel integrated gate driver with a simple logic circuit (SLC) using 5 a-Si TFTs has been developed. The noise voltage owing to clock coupling is eliminated effectively with an overlapped clock controlled transistor. The SLC gate driver, successfully integrated in 14.1-in. XGA TFT-LCDs, shows marked stability despite the extremely simple structure.
SID Symposium Digest of Technical Papers | 2009
Yong Ho Jang; Hae Yeol Kim; Binn Kim; Seung Chan Choi; Hyung Nyuck Cho; Chang il Ryoo; Wooseok Choi; Soo Young Yoon; Kwon-Shik Park; Taewoong Moon; Nam Wook Cho; Chang-Dong Kim
The characteristic feature of an optimum design of a-Si gate driver circuits and its scaling properties are presented. The delay time of the output pulse of gate driver circuits with different layout characteristics was analyzed by a distributed-load modeling. The effect of TFT properties, clock phase and the output load on the optimum condition is given. Finally, scaling has been found to give apparent power law dependence on the circuit area, signifying higher performance of the circuits with smaller area.
Archive | 2004
Yong Ho Jang; Binn Kim; Soo Young Yoon
Archive | 2007
Binn Kim; Kwon Shik Park; Soo Young Yoon; Min Doo Chun
Archive | 2005
Yong Ho Jang; Binn Kim; Su Hwan Moon; Soo Young Yoon
Archive | 2005
Yong Ho Jang; Binn Kim; Hyung Nyuck Cho
Archive | 2006
Yong Ho Jang; Binn Kim; Soo Young Yoon
SID Symposium Digest of Technical Papers | 2016
Young Kwan Jung; Hong-Seok Choi; So Yeon Ahn; Seunghyun Kim; Heedong Choi; Chang Wook Han; Binn Kim; Se June Kim; Jong-Moo Kim; Jeong Hyeon Choi; Soo Young Yoon; Yoon Heung Tak; Hyun Chul Choi; Byung Chul Ahn; In Byeong Kang