Bo-Keun Kim | Researchain

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IEEE Journal of Solid-state Circuits | 2012

A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface

Chulbum Kim; Jinho Ryu; Taesung Lee; Hyung-Gon Kim; Jaewoo Lim; Jaeyong Jeong; Seonghwan Seo; Hong-Soo Jeon; Bo-Keun Kim; Inyoul Lee; Dooseop Lee; Pan-Suk Kwak; Seong-Soon Cho; Yong-Sik Yim; Chang-hyun Cho; Woopyo Jeong; Kwang-Il Park; Jinman Han; Du-Heon Song; Kye-Hyun Kyung; Young-Ho Lim; Young-Hyun Jun

A monolithic 64 Gb MLC NAND flash based on 21 nm process technology has been developed. The device consists of 4-plane arrays and provides page size of up to 32 KB. It also features a newly developed asynchronous DDR interface that can support up to the maximum bandwidth of 400 MB/s. To improve performance and reliability, on-chip randomizer, soft data readout, and incremental bit line pre-charge scheme have been developed.

Archive | 2009

APPARATUS AND METHOD FOR SPLITTING AND DISPLAYING SCREEN OF TOUCH SCREEN

Bo-Keun Kim; Se-Jin Kwak

symposium on vlsi circuits | 2011

A 21nm high performance 64Gb MLC NAND flash memory with 400MB/s asynchronous toggle DDR interface

Chulbum Kim; Jinho Ryu; Taesung Lee; Hyeonggon Kim; Jeawoo Lim; Jaeyong Jeong; Seonghwan Seo; Hong-Soo Jeon; Bo-Keun Kim; Inyoul Lee; Dooseop Lee; Pan-Suk Kwak; Seong-Soon Cho; Yong-Sik Yim; Chang-hyun Cho; Woopyo Jeong; Jinman Han; Dooheon Song; Kye-Hyun Kyung; Young-Ho Lim; Young-Hyun Jun

Archive | 2014