Bo-Yong Chung
Samsung
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Featured researches published by Bo-Yong Chung.
SID Symposium Digest of Technical Papers | 2011
Yong-sung Park; Bo-Yong Chung; Chul-Kyu Kang; Seoung-Il Park; Ki-Ju Im; Jong Han Jeong; Byung-hee Kim; Sang Soo Kim
Oxide TFTs have a negative threshold voltage (Vth), which can become even more negative in response to DC or AC stress. Therefore, these voltage stresses can cause severe leakage current in a scan driver. In this paper, a scan driver with dynamic threshold voltage control (DTVC) is proposed to minimize the leakage current and enlarge operating margin. Effectiveness of DTVC was verified with a 14-inch AMOLED.
Journal of The Society for Information Display | 2011
Dong-Wook Park; Chul-Kyu Kang; Yong-sung Park; Bo-Yong Chung; Kyung-hoon Chung; Keum-Nam Kim; Byung-hee Kim; Sang Soo Kim
— Large-sized active-matrix organic light-emitting diode (AMOLED) displays require high-frame-rate driving technology to achieve high-quality 3-D images. However, higher-frame-rate driving decreases the time available for compensating Vth in the pixel circuit. Therefore, a new method needs to be developed to compensate the pixel circuit in a shorter time interval. In this work, image quality of a 14-in. quarter full-high-definition (qFHD) AMOLED driven at a frame rate of over 240 Hz was investigated. It was found that image degradation is related to the time available for compensation of the driving TFT threshold voltage. To solve this problem, novel AMOLED pixel circuits for high-speed operation are proposed to compensate threshold-voltage variation at frame rates above 240 Hz. When Vth is varied over ±1.0 V, conventional pixel circuits showed current deviations of 22.8 and 39.8% at 240 and 480 Hz, respectively, while the new pixel circuits showed deviations of only 2.6 and 5.4%.
SID Symposium Digest of Technical Papers | 2011
Bo-Yong Chung; Dong-Wook Park; Yong-sung Park; Deok-Young Choi; Keum-Nam Kim; Byung-hee Kim; Sang Soo Kim
A driving method has been developed for a 2D-3D switchable AMOLED using progressive emission PE or simultaneous emission SE. The proposed method is implemented by selecting PE mode for 2D to improve light emission ratio and SE mode for 3D to reduce left-right crosstalk without sacrificing luminance. This method also improves the contrast ratio by removing unnecessary light emission and can offer better uniformity by increasing the threshold voltage compensation time. A 240Hz-driven 30″ 3D AMOLED display was built and it was confirmed that there is no ELVDD surge current in the SE mode.
SID Symposium Digest of Technical Papers | 2010
Dong-Wook Park; Chul-Kyu Kang; Yong-sung Park; Bo-Yong Chung; Kyung-hoon Chung; Byung-hee Kim; Sang Soo Kim
An active matrix organic light emitting diode pixel circuit and its driving scheme for high frame frequency are proposed for implementation of a 3D display. The proposed pixel circuit can compensate the threshold voltage distribution of low temperature poly silicon-thin film transistors at high-speed operation of 240Hz or more. According to the simulation, current deviation of 1.73% and 3.94% are obtained at frame rates of 240Hz and 480Hz when Vth distribution is ±0.5 V.
SID Symposium Digest of Technical Papers | 2011
Kyung-hoon Chung; Bo-Yong Chung; Seong-Il Park; Dong-Wook Park; Sang-Moo Choi; Keum-Nam Kim; Byung-hee Kim; Sang Soo Kim
Simultaneous Emission with Active Voltage control (SEAV) is a strong candidate for crosstalk-free driving of 3D Active Matrix Organic Light Emitting Diode (AMOLED) displays. A gate driver for a SEAV 3D AMOLED panel needs two operating modes: the simultaneous switching mode and the progressive scanning mode. However, conventional gate drivers can operate in only progressive scanning mode. In this paper, a new integrated gate driver to support both of these modes is proposed and applied to a prototype 3D AMOLED display panel.
SID Symposium Digest of Technical Papers | 2010
Deok-Young Choi; Yong-sung Park; Bo-Yong Chung; Byung-hee Kim; Sang Soo Kim
A new method to reduce leakage current and a new pixel circuit based on super grain silicon (SGS) backplane are proposed. This method has three strong points. First, it is possible to reduce random mura caused by leakage current. Second, the number of gates to reduce leakage current can be minimized. Finally, it is also possible to decrease the storage capacitor size.
Archive | 2009
Bo-Yong Chung; Chul-Kyu Kang
Archive | 2010
Bo-Yong Chung; Keum-Nam Kim
Archive | 2010
Bo-Yong Chung; Keum-Nam Kim
Archive | 2010
Bo-Yong Chung; Keum-Nam Kim