Bo-Yun Jang

Directional Solidification Behaviors of Polycrystalline Silicon by Electron-Beam Melting

The advanced electron beam melting (EBM) system with the combination of vacuum refining and directional solidification (DS) performed the purification of large amounts of metallurgical grade silicon (MG-Si). In order to increase grain size or to align columnar grains being parallel to DS pulling direction in Si ingots, non-irradiated inner diameters in an EB pattern in the DS process were varied at a range of 5–35 mm. Average grain size increased with increasing non-irradiated inner diameter due to a smaller temperature gradient during the solidification of Si melts. However, the slope of the grain boundary inclined towards the ingot axis, which led to the formation of a triple junction in the ingot center in the case of large non-irradiated inner diameter. This happened despite there being a large temperature gradient due to the turbulent flow in the pool. This work reported that a purity of 99.8% for MG-Si was improved to above 99.999% with an ingot yield of 90% for 1 h.

MIM capacitors using BaSm2Ti4O12 and Sm2Ti2O7 dielectrics

The dielectric properties of BaSm 2 Ti 4 O 12 (BST) and Sm 2 Ti 2 O 7 (ST) films were investigated in order to evaluate their potential for use in metal-insulator-metal (MIM) capacitors. The crystalline BST phase was formed when the film was grown at 700°C and subjected to rapid thermal annealing (RTA) at 900°C. The ST phase was formed in the film grown at 300°C and subjected to RTA at 900°C. A high capacitance density of 4.84 fF/μm 2 and a low leakage current density of 4.28 fA/pF V were obtained from the BST film with a thickness of 138 nm. The BST film has the linear and quadratic coefficients of capacitance of 684 ppm/V and -295 ppm/V 2 , respectively, and a temperature coefficient of capacitance of -136 ppm/°C at 100 kHz. The ST film has a high capacitance density (3.47 fF/μm 2 ) and a very low leakage current density (0.26 fA/pF V). The ST film also showed small voltage and temperature coefficients of capacitance. Therefore, both the BST and ST films are good candidate materials for MIM capacitors.

Impurity segregation behavior in polycrystalline silicon ingot grown with variation of electron-beam power

Electron beam melting (EBM) systems have been used to improve the purity of metallurgical grade silicon feedstock for photovoltaic application. Our advanced EBM system is able to effectively remove volatile impurities using a heat source with high energy from an electron gun and to continuously allow impurities to segregate at the top of an ingot solidified in a directional solidification (DS) zone in a vacuum chamber. Heat in the silicon melt should move toward the ingot bottom for the desired DS. However, heat flux though the ingot is changed as the ingot becomes longer due to low thermal conductivity of silicon. This causes a non-uniform microstructure of the ingot, finally leading to impurity segregation at its middle. In this research, EB power irradiated on the silicon melt was controlled during the ingot growth in order to suppress the change of heat flux. EB power was reduced from 12 to 6.6 kW during the growth period of 45 min with a drop rate of 0.125 kW/min. Also, the silicon ingot was grown under a constant EB power of 12 kW to estimate the effect of the drop rate of EB power. When the EB power was reduced, the grains with columnar shape were much larger at the middle of the ingot compared to the case of constant EB power. Also, the present research reports a possible reason for the improvement of ingot purity by considering heat flux behaviors.

Influence of Shell on the Electrochemical Properties of Si Nanoparticle

Effects of SiOx or C shells on electrochemical properties of Si nanoparticles were investigated. SiOx shells with thickness of 10~15 nm were formed on homogeneously crystalline Si nanoparticles. Incase of Si-C nanoparticles, there were 30~40 layers of C with a number of defects. Li-ion batteries were fabricated with the above-mentioned nanoparticles, and their electrochemical properties were measured. Pristine Si shows a high IRC (initial reversible capacity) of 2,517 mAh/g and ICE (initial columbic efficiency) of 87%, but low capacity retention of 22%, respectively. SiOx shells decreased IRC (1,534 mAh/g) and ICE (54%), while the retention increased up to 65%, which can be explained by irreversible phases such as LiO2 and Li2SiO3. C shells exhibited no differences in IRC and ICE compared to the pristine Si but an enhanced retention of 54%, which might be from proper defect structures.

Polycrystalline silicon wafer with columnar grain structure grown directly on silicon carbide coated graphite substrate

Concerning horizontally direct growth technology, graphite material with excellent thermal and chemical resistance is frequently used as both the crucible and the substrate in equipment operated at high temperatures. However, this can cause a major problem, namely, contamination due to the carbon and metallic impurities derived from graphite components. This study presents the experimental findings on a method of preventing the incorporation of unintended impurities into the silicon wafer by modifying the surface of the graphite. Coating the crucible and substrate with silicon carbide (SiC) could significantly reduce carbon (1.5 × 1017 atom/cm3) and metallic (undetected under analysis resolution) contamination by suppressing physical contact between the silicon melt and the graphite. It is expected that the purity of the silicon wafer will be improved to meet the demand for next-generation solar cell production with the optimum growth conditions required for obtaining the desired property of the silicon wafer.

Wire Electric Discharge Machining Process of Various Crystalline Silicon Wafers

Wire electrical discharge machining (WEDM) process was evaluated to slice Silicon (Si) for various applications. Specifically, various Si workpieces with various resistances, such as single and multi crystalline Si bricks and wafers were used. As conventional slicing processes, such as slurry-on or diamond-on wire slicing, are based on mechanical abrasions between Si and abrasive, there is a limitation to decrease the wafer thickness as well as kerf-loss. Especially, when the wafer thickness is less than 150 μm, wafer breakage increases dramatically during the slicing process. Single crystalline P-type Si bricks and wafers were successively sliced with considerable slicing speed regardless of its growth direction. Also, typical defects, such as microcracks, craters, microholes, and debris, were introduced when Si was sliced by electrical discharge. Also, it was found that defect type is also dependent on resistance of Si. Consequently, this study confirmed the feasibility of slicing single crystalline Si by WEDM.

Microstructure control of columnar-grained silicon substrate solidified from silicon melts using gas pressure

A silicon substrate with the dimensions of 100 × 140 × 0.3mm was grown directly from liquid silicon with gas pressure. The silicon melt in the sealed melting part was injected into the growth part at applied pressure of 780-850 Torr. The solidified silicon substrate was then transferred by the pull of the cooled dummy bar. A desirable structure with a liquid-solid interface perpendicular to the pulling direction was formed when the mold temperature in the solidification zone of the growth part was much higher than that of the dummy bar, as this technique should be able to overcome thermal loss through the molds and the limited heat flux derived from the very narrow contact area between the silicon melt and the dummy bar. In addition, because the metallic impurities and expansion of volume during solidification are preferably moved to a liquid phase, a high-quality silicon substrate, without defects such as cracks and impurities in the substrate, could be manufactured in the interface structure. The present study reports the experimental findings on a new and direct growth system for obtaining silicon substrates characterized by high quality and productivity, as a candidate for alternate routes for the fabrication of silicon substrates.

Effect of Processing Parameters on Thickness of Columnar Structured Silicon Wafers Directly Grown from Silicon Melts

In order to obtain optimum growth conditions for desired thickness and more effective silicon feedstock usage, effects of processing parameters such as preheated substrate temperatures, time intervals, moving velocity of substrates, and Ar gas blowing rates on silicon ribbon thickness were investigated in the horizontal growth process. Most of the parameters strongly affected in the control of ribbon thickness with columnar grain structure depended on the solidification rate. The thickness of the silicon ribbon decreased with an increasing substrate temperature, decreasing time interval, and increasing moving velocity of the substrate. However, the blowing of Ar gas onto a liquid layer existing on the surface of solidified ribbon contributed to achieving smooth surface roughness but did not closely affect the change of ribbon thickness in the case of a blowing rate of ≥0.65 Nm3/h because the thickness of the solidified layer was already determined by the exit height of the reservoir.

Study of Europium-activated Calcium Aluminium Silicate Phosphors

Europium-activated calcium aluminium silicate phosphors were synthesized for the first time and the structures and luminescence characteristics of these phosphors were investigated. The phosphors in this study emitted blue, green, and even red light depending on the starting milterials and annealing conditions for synthesis. In addition, the structure was also changed when the different starting materials were used. When was used as a starting material, tetragonal was formed. However, pure green light was emitted when the annealing was conducted in reduced atmosphere and red one was emitted by annealing in air. In the case of as a starting material, triclinic was formed and only pure blue emission was observed. Moreover, this blue phosphor exhibited higher intensity than that of commercial YAG:Ce phosphor, which showed the possibility of application on the phosphor for new light source such as a UV-LED.