Bob Y. Zheng

Narrowband photodetection in the near-infrared with a plasmon-induced hot electron device

In gratings, incident light can couple strongly to plasmons propagating through periodically spaced slits in a metal film, resulting in a strong, resonant absorption whose frequency is determined by the nanostructure periodicity. When a grating is patterned on a silicon substrate, the absorption response can be combined with plasmon-induced hot electron photocurrent generation. This yields a photodetector with a strongly resonant, narrowband photocurrent response in the infrared, limited at low frequencies by the Schottky barrier, not the bandgap of silicon. Here we report a grating-based hot electron device with significantly larger photocurrent responsivity than previously reported antenna-based geometries. The grating geometry also enables more than three times narrower spectral response than observed for nanoantenna-based devices. This approach opens up the possibility of plasmonic sensors with direct electrical readout, such as an on-chip surface plasmon resonance detector driven at a single wavelength.

Embedding Plasmonic Nanostructure Diodes Enhances Hot Electron Emission

When plasmonic nanostructures serve as the metallic counterpart of a metal-semiconductor Schottky interface, hot electrons due to plasmon decay are emitted across the Schottky barrier, generating measurable photocurrents in the semiconductor. When the plasmonic nanostructure is atop the semiconductor, only a small percentage of hot electrons are excited with a wavevector permitting transport across the Schottky barrier. Here we show that embedding plasmonic structures into the semiconductor substantially increases hot electron emission. Responsivities increase by 25× over planar diodes for embedding depths as small as 5 nm. The vertical Schottky barriers created by this geometry make the plasmon-induced hot electron process the dominant contributor to photocurrent in plasmonic nanostructure-diode-based devices.

Distinguishing between plasmon-induced and photoexcited carriers in a device geometry.

The use of surface plasmons, charge density oscillations of conduction electrons of metallic nanostructures, to boost the efficiency of light-harvesting devices through increased light-matter interactions could drastically alter how sunlight is converted into electricity or fuels. These excitations can decay directly into energetic electron–hole pairs, useful for photocurrent generation or photocatalysis. However, the mechanisms behind plasmonic carrier generation remain poorly understood. Here we use nanowire-based hot-carrier devices on a wide-bandgap semiconductor to show that plasmonic carrier generation is proportional to internal field-intensity enhancement and occurs independently of bulk absorption. We also show that plasmon-induced hot electrons have higher energies than carriers generated by direct excitation and that reducing the barrier height allows for the collection of carriers from plasmons and direct photoexcitation. Our results provide a route to increasing the efficiency of plasmonic hot-carrier devices, which could lead to more efficient devices for converting sunlight into usable energy.

Color‐Selective and CMOS‐Compatible Photodetection Based on Aluminum Plasmonics

A color-selective, band-engineered photodetector is demonstrated. The device uses two Schottky junctions to accumulate charge in an energy well, which results in photocurrent gain and a plasmonic aluminum grating for photocurrent enhancement and red-green-blue color selectivity. This work provides a more intelligent way to design imaging sensors by integrating amplifiers and color filters directly into pixels.

Fan-Shaped Gold Nanoantennas above Reflective Substrates for Surface-Enhanced Infrared Absorption (SEIRA)

Here, we report a new nanoantenna for surface-enhanced infrared absorption (SEIRA) detection, consisting of a fan-shaped Au structure positioned at a well-specified distance above a reflective plane with an intervening silica spacer layer. We examine how to optimize both the antenna dimensions and the spacer layer for optimal SEIRA enhancement of the C-H stretching mode. This tunable 3D geometry yields a theoretical SEIRA enhancement factor of 10(5), corresponding to the experimental detection of 20-200 zeptomoles of octadecanethiol, using a standard commercial FTIR spectrometer. Experimental studies illustrate the sensitivity of the observed SEIRA signal to the gap dimensions. The optimized antenna structure exhibits an order of magnitude greater SEIRA sensitivity than previous record-setting designs.

High Chromaticity Aluminum Plasmonic Pixels for Active Liquid Crystal Displays.

Chromatic devices such as flat panel displays could, in principle, be substantially improved by incorporating aluminum plasmonic nanostructures instead of conventional chromophores that are susceptible to photobleaching. In nanostructure form, aluminum is capable of producing colors that span the visible region of the spectrum while contributing exceptional robustness, low cost, and streamlined manufacturability compatible with semiconductor manufacturing technology. However, individual aluminum nanostructures alone lack the vivid chromaticity of currently available chromophores because of the strong damping of the aluminum plasmon resonance in the visible region of the spectrum. In recent work, we showed that pixels formed by periodic arrays of Al nanostructures yield far more vivid coloration than the individual nanostructures. This progress was achieved by exploiting far-field diffractive coupling, which significantly suppresses the scattering response on the long-wavelength side of plasmonic pixel resonances. In the present work, we show that by utilizing another collective coupling effect, Fano interference, it is possible to substantially narrow the short-wavelength side of the pixel spectral response. Together, these two complementary effects provide unprecedented control of plasmonic pixel spectral line shape, resulting in aluminum pixels with far more vivid, monochromatic coloration across the entire RGB color gamut than previously attainable. We further demonstrate that pixels designed in this manner can be used directly as switchable elements in liquid crystal displays and determine the minimum and optimal numbers of nanorods required in an array to achieve good color quality and intensity.

A room-temperature mid-infrared photodetector for on-chip molecular vibrational spectroscopy

Infrared (IR) photodetection is of major scientific and technical interest since virtually all molecules exhibit characteristic vibrational modes in the mid-infrared region of the spectrum, giving rise to molecular spectroscopy and chemical imaging in this wavelength range. High-resolution IR spectroscopies, such as Fourier Transform IR spectroscopy, typically require large, bulky optical measurement systems and expensive photodetector components. Here, we present a high-responsivity photodetector for the mid-IR spectral region which operates at room temperature. Fabricated from silicon and aluminum, the photodetection mechanism is based on free carrier absorption, giving rise to a photoresponse rivalling commercially available cooled IR photodetectors. We demonstrate that infrared spectra of molecules deposited on this detector can be obtained by a direct electrical read-out. This work could pave the way for simple, fully integrated chemical sensors and other applications, such as chemical imaging, which would benefit from the combination of mid-IR detection, room-temperature operation, and ultracompact portability.Infrared (IR) photodetection is of major scientific and technical interest since virtually all molecules exhibit characteristic vibrational modes in the mid-infrared region of the spectrum, giving rise to molecular spectroscopy and chemical imaging in this wavelength range. High-resolution IR spectroscopies, such as Fourier Transform IR spectroscopy, typically require large, bulky optical measurement systems and expensive photodetector components. Here, we present a high-responsivity photodetector for the mid-IR spectral region which operates at room temperature. Fabricated from silicon and aluminum, the photodetection mechanism is based on free carrier absorption, giving rise to a photoresponse rivalling commercially available cooled IR photodetectors. We demonstrate that infrared spectra of molecules deposited on this detector can be obtained by a direct electrical read-out. This work could pave the way for simple, fully integrated chemical sensors and other applications, such as chemical imaging, which...

Distinguishing between plasmon-induced and photo-excited carriers in a device geometry (Presentation Recording)

The use of surface plasmons, charge density oscillations of conduction electrons of metallic nanostructures, could drastically alter how sunlight is converted into electricity or fuels by increasing the efficiency of light-harvesting devices through enhanced light-matter interactions. Surface plasmons can decay directly into energetic electron-hole pairs, or “hot” carriers, which can be used for photocurrent generation or photocatalysis. However, little has been understood about the fundamental mechanisms behind plasmonic carrier generation. Here we use metallic nano-wire based hot carrier devices on a wide-bandgap semiconductor substrate to show that plasmonic hot carrier generation is proportional to field intensity enhancement instead of bulk material absorption. We also show that interband carrier generation results in less energetic carriers than plasmon-induced generation, and a plasmon is required to inject electrons over a large energy barrier. Finite Difference Time Domain (FDTD) method is used for theoretical calculations, which match well with experimental results. This work points to a clear route to increasing the efficiency of plasmonic hot carrier devices and drastically simplifies the theoretical framework for understanding the mechanisms of hot carrier generation.

Fan-shaped gold nanoantennas above reflective substrates for surface-enhanced infrared absorption (SEIRA) (Presentation Recording)

Surface-enhanced infrared absorption (SEIRA) has been gaining substantial attention by using plasmonic nanoantennas to amplify near-field intensities so that it can extend IR spectroscopy to zeptomolar quantities and ultimately to the sigle-molecule level. Here we report a new nanoantenna for SEIRA detection, consisting of a fan-shaped Au structure positioned at a well-specified distance above a reflective plane with an intervening silica spacer layer. This antenna can be easily tuned to overlap vibrational modes within a broad spectral range from the near-IR into terahertz regimes. Our finite difference time domain (FDTD) simulations reveal a maximum SEIRA enhancement factor of 105 in the antenna junction area, which is corresponding to the experimental detection of 20-200 zeptomoles of octadecanethiol, using a standard commercial FTIR spectrometer. Our optimized antenna exhibits an order of magnitude greater SEIRA sensitivity than previous record-setting designs, which opens new opportunities for using infrared spectroscopy to analyze exceptionally small quantities of molecules.