Brian G. Bush

Low Temperature Plasma for Compositional Depth Profiling of Crosslinking Organic Multilayers: Comparison with C60 and Giant Argon Gas Cluster Sources

RATIONALE For organic electronics, device performance can be affected by interlayer diffusion across interfaces. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) can resolve buried structures with nanometer resolution, but instrument artifacts make this difficult. Low-temperature plasma (LTP) is suggested as a way to prepare artifact-free surfaces for accurate determination of chemical diffusion. METHODS A model organic layer system consisting of three 1 nm delta layers of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) separated by three 30 nm layers of tris(8-hydroxyquinolinato)aluminum (Alq3) was used to evaluate the effectiveness of LTP etching for the preparation of crater edge surfaces for subsequent compositional depth profile analysis. This was compared with depth profiles obtained using an instrument equipped with an argon cluster sputter source. RESULTS The quality of the depth profiles was determined by comparing the depth resolutions of the BCP delta layers. The full width at half maximum gave depth resolutions of 6.9 nm and 6.0 nm using LTP, and 6.2 nm and 5.8 nm using argon clusters. In comparison, the 1/e decay length of the trailing edge gave depth resolutions of 2.0 nm and 1.8 nm using LTP, and 3.5 nm and 3.4 nm using argon clusters. CONCLUSIONS The comparison of the 1/e decay lengths showed that LTP can determine the thickness and composition of the buried structures without instrument artifacts. Although it does suffer from contaminant deposition, LTP was shown to be a viable option for preparing crater edges for a more accurate determination of buried structures.

Characteristics of graphene for quantized hall effect measurements

This paper describes concepts and measurement techniques necessary for characterization of graphene in the development of graphene-based quantized Hall effect (QHE) devices and resistance standards. We briefly contrast the properties of graphene produced by three common processing methods and discuss the conditions necessary for well-developed resistance plateaus to be observed. Methods used to determine the graphene layer thickness are presented. The metrologically relevant characteristics of graphene are correlated with electrical transport measurements in strong magnetic fields.

Two-dimensional strain-mapping by electron backscatter diffraction and confocal Raman spectroscopy

The strain field surrounding a spherical indentation in silicon is mapped in two dimensions (2-D) using electron backscatter diffraction (EBSD) cross-correlation and confocal Raman spectroscopy techniques. The 200 mN indentation created a 4 μm diameter residual contact impression in the silicon (001) surface. Maps about 50 μm × 50 μm area with 128 pixels × 128 pixels were generated in several hours, extending, by comparison, assessment of the accuracy of both techniques to mapping multiaxial strain states in 2-D. EBSD measurements showed a residual strain field dominated by in-surface normal and shear strains, with alternating tensile and compressive lobes extending about three to four indentation diameters from the contact and exhibiting two-fold symmetry. Raman measurements showed a residual Raman shift field, dominated by positive shifts, also extending about three to four indentation diameters from the contact but exhibiting four-fold symmetry. The 2-D EBSD results, in combination with a mechanical-sp...

Frictional properties of native and functionalized type I collagen thin films

Frictional properties of native and fibronectin (FN)-functionalized type I collagen (COL) thin films were studied via atomic force microscopy. The COL lateral contact stiffness was dependent only on the hydration state, indicating that shear deformation was invariant with FN. In contrast, the COL coefficient of friction and shear strength varied with both functionalization and hydration state. The changes in shear strength were found to correlate well with changes in mean cell spread area on the same thin films, suggesting that shear strength is a better indicator of cell spreading than heretofore considerations of film, and thus extracellular matrix, stiffness alone.

Low-temperature plasma for compositional depth profiling of crosslinking organic multilayers

RATIONALE For organic electronics, device performance can be affected by interlayer diffusion across interfaces. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) can resolve buried structures with nanometer resolution, but instrument artifacts make this difficult. Low-temperature plasma (LTP) is suggested as a way to prepare artifact-free surfaces for accurate determination of chemical diffusion. METHODS A model organic layer system consisting of three 1 nm delta layers of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) separated by three 30 nm layers of tris(8-hydroxyquinolinato)aluminum (Alq3) was used to evaluate the effectiveness of LTP etching for the preparation of crater edge surfaces for subsequent compositional depth profile analysis. This was compared with depth profiles obtained using an instrument equipped with an argon cluster sputter source. RESULTS The quality of the depth profiles was determined by comparing the depth resolutions of the BCP delta layers. The full width at half maximum gave depth resolutions of 6.9 nm and 6.0 nm using LTP, and 6.2 nm and 5.8 nm using argon clusters. In comparison, the 1/e decay length of the trailing edge gave depth resolutions of 2.0 nm and 1.8 nm using LTP, and 3.5 nm and 3.4 nm using argon clusters. CONCLUSIONS The comparison of the 1/e decay lengths showed that LTP can determine the thickness and composition of the buried structures without instrument artifacts. Although it does suffer from contaminant deposition, LTP was shown to be a viable option for preparing crater edges for a more accurate determination of buried structures.

Low-temperature plasma for compositional depth profiling of crosslinking organic multilayers: comparison with C60and giant argon gas cluster sources: Low-temperature plasma for crater edge depth profiling

RATIONALE For organic electronics, device performance can be affected by interlayer diffusion across interfaces. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) can resolve buried structures with nanometer resolution, but instrument artifacts make this difficult. Low-temperature plasma (LTP) is suggested as a way to prepare artifact-free surfaces for accurate determination of chemical diffusion. METHODS A model organic layer system consisting of three 1 nm delta layers of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) separated by three 30 nm layers of tris(8-hydroxyquinolinato)aluminum (Alq3) was used to evaluate the effectiveness of LTP etching for the preparation of crater edge surfaces for subsequent compositional depth profile analysis. This was compared with depth profiles obtained using an instrument equipped with an argon cluster sputter source. RESULTS The quality of the depth profiles was determined by comparing the depth resolutions of the BCP delta layers. The full width at half maximum gave depth resolutions of 6.9 nm and 6.0 nm using LTP, and 6.2 nm and 5.8 nm using argon clusters. In comparison, the 1/e decay length of the trailing edge gave depth resolutions of 2.0 nm and 1.8 nm using LTP, and 3.5 nm and 3.4 nm using argon clusters. CONCLUSIONS The comparison of the 1/e decay lengths showed that LTP can determine the thickness and composition of the buried structures without instrument artifacts. Although it does suffer from contaminant deposition, LTP was shown to be a viable option for preparing crater edges for a more accurate determination of buried structures.