Brian M. Bersch

Bottom-up synthesis of vertically oriented two-dimensional materials

Understanding nucleation and growth of two-dimensional (2D) and layered materials is a challenging topic due to the complex van der Waals interactions between layers and substrate. The morphology of 2D materials is known vary depending on experimental conditions. For the case of MoS2, the morphology has been shown to vary from rounded (molybdenum rich) domains to equilateral triangular (sulfur rich) domains. These different morphologies can result in drastically different properties, which can be exploited for applications in catalytic reactions, digital electronics, optoelectronics, and energy storage. Powder vaporization (PV) synthesis of molybdenum disulfide (MoS2) can yield vertical domains, however, these domains are often ignored when the morphology evolution of MoS2 is discussed, thereby completely omitting a major part of the impact of the Mo:S ratio to the growth mode of MoS2 during PV. Combining experimental and numerical simulation methods, we reveal a vertical-to-horizontal growth mode transition for MoS2 that occurs in the presence of a molybdenum oxide partial pressure gradient. Transmission electron microscopy reveals that the growth of vertical MoS2 results from initial seeding of single crystalline molybdenum dioxide, followed by sulfurization from the substrate upward to form vertically oriented MoS2 domains.

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe2) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe2/sapphire exhibit ambipolar behavior with excellent on/off ratios (∼107), high current density (1-10 μA·μm-1), and good field-effect transistor mobility (∼30 cm2·V-1·s-1) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.

Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2

Evaluating and tuning the properties of two-dimensional (2D) materials is a major focus of advancing 2D science and technology. While many claim that the photonic properties of a 2D layer provide evidence that the material is “high quality”, this may not be true for electronic performance. In this work, we deconvolute the photonic and electronic response of synthetic monolayer molybdenum disulfide. We demonstrate that enhanced photoluminescence can be robustly engineered via the proper choice of substrate, where growth of MoS2 on r-plane sapphire can yield >100x enhancement in PL and carrier lifetime due to increased molybdenum-oxygen bonding compared to that of traditionally grown MoS2 on c-plane sapphire. These dramatic enhancements in optical properties are similar to those of super-acid treated MoS2, and suggest that the electronic properties of the MoS2 are also superior. However, a direct comparison of the charge transport properties indicates that the enhanced PL due to increased Mo-O bonding leads to p-type compensation doping, and is accompanied by a 2x degradation in transport properties compared to MoS2 grown on c-plane sapphire. This work provides a foundation for understanding the link between photonic and electronic performance of 2D semiconducting layers, and demonstrates that they are not always correlated.

Two-dimensional materials for low power and high frequency devices

In this paper, we present an overview of the current state-of-the-art in two-dimensional materials beyond graphene, and summarize device performance reported to-date. There is promise for these layered materials to be the foundation of a new area in low power and high frequency electronics, with early reports indicating 10s of gigahertz (GHz) operation without significant optimization of parasitic resistances or capacitances. In addition, we discuss the synthesis of transition metal dichalcogenides and the integration of as-grown material into heterostructures and electronic devices. Finally, we discuss the impact of surface preparation on the integration of dielectrics with MoS2 required to achieve GHz performance.