Brian Skinner

Theory of hopping conduction in arrays of doped semiconductor nanocrystals

The resistivity of a dense crystalline array of semiconductor nanocrystals (NCs) depends in a sensitive way on the level of doping as well as on the NC size and spacing. The choice of these parameters determines whether electron conduction through the array will be characterized by activated nearest-neighbor hopping or variable-range hopping (VRH). Thus far, no general theory exists to explain how these different behaviors arise at different doping levels and for different types of NCs. In this paper, we examine a simple theoretical model of an array of doped semiconductor NCs that can explain the transition from activated transport to VRH. We show that in sufficiently small NCs, the fluctuations in donor number from one NC to another provide sufficient disorder to produce charging of some NCs, as electrons are driven to vacate higher shells of the quantum confinement energy spectrum. This confinement-driven charging produces a disordered Coulomb landscape throughout the array and leads to VRH at low temperature. We use a simple computer simulation to identify different regimes of conduction in the space of temperature, doping level, and NC diameter. We also discuss the implications of our results for large NCs with external impurity charges and for NCs that are gated electrochemically.

Ionic conductivity on a wetting surface

Recent experiments measuring the electrical conductivity of DNA molecules highlight the need for a theoretical model of ion transport along a charged surface. Here we present a simple theory based on the idea of unbinding of ion pairs. The strong humidity dependence of conductivity is explained by the decrease in the electrostatic self-energy of a separated pair when a layer of water (with high dielectric constant) is adsorbed to the surface. We compare our prediction for conductivity to experiment and discuss the limits of its applicability.

Coulomb disorder in three-dimensional Dirac systems

In three-dimensional materials with a Dirac spectrum, weak short-ranged disorder is essentially irrelevant near the Dirac point. This is manifestly not the case for Coulomb disorder, where the long-ranged nature of the potential produced by charged impurities implies large fluctuations of the disorder potential even when impurities are sparse, and these fluctuations are screened by the formation of electron/hole puddles. In this paper I present a theory of such nonlinear screening of Coulomb disorder in three-dimensional Dirac systems, and I derive the typical magnitude of the disorder potential, the corresponding density of states, and the size and density of electron/hole puddles. The resulting conductivity is also discussed.

Effect of dielectric response on the quantum capacitance of graphene in a strong magnetic field

The quantum capacitance of graphene can be negative when the graphene is placed in a strong magnetic field, which is a clear experimental signature of positional correlations between electrons. Here we show that the quantum capacitance of graphene is also strongly affected by its dielectric polarizability, which in a magnetic field is wave vector-dependent. We study this effect both theoretically and experimentally. We develop a theory and numerical procedure for accounting for the graphene dielectric response, and we present measurements of the quantum capacitance of high-quality graphene capacitors on boron nitride. Theory and experiment are found to be in good agreement.

Effects of bulk charged impurities on the bulk and surface transport in three-dimensional topological insulators

In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultrarelativistic Dirac fermions. This unusual pairing creates a novel playground for studying the interplay between disorder and electronic transport. In this mini-review, we focus on the disorder caused by the three-dimensionally distributed charged impurities that are ubiquitous in TIs, and we outline the effects it has on both the bulk and surface transport in TIs. We present self-consistent theories for Coulomb screening both in the bulk and at the surface, discuss the magnitude of the disorder potential in each case, and present results for the conductivity. In the bulk, where the band gap leads to thermally activated transport, we show how disorder leads to a smaller-than-expected activation energy that gives way to variable-range hopping at low temperatures. We confirm this enhanced conductivity with numerical simulations that also allow us to explore different degrees of impurity compensation. For the surface, where the TI has gapless Dirac modes, we present a theory of disorder and screening of deep impurities, and we calculate the corresponding zero-temperature conductivity. We also comment on the growth of the disorder potential in passing from the surface of the TI into the bulk. Finally, we discuss how the presence of a gap at the Dirac point, introduced by some source of time-reversal symmetry breaking, affects the disorder potential at the surface and the mid-gap density of states.

Coulomb gap in the one-particle density of states in three-dimensional systems with localized electrons

The one-particle density of states (1P-DOS) in a system with localized electron states vanishes at the Fermi level due to the Coulomb interaction between electrons. Derivation of the Coulomb gap uses stability criteria of the ground state. The simplest criterion is based on the excitonic interaction of an electron and a hole and leads to a quadratic 1P-DOS in the three-dimensional (3D) case. In 3D, higher stability criteria, including two or more electrons, were predicted to exponentially deplete the 1P-DOS at energies close enough to the Fermi level. In this paper we show that there is a range of intermediate energies where this depletion is strongly compensated by the excitonic interaction between single-particle excitations, so that the crossover from quadratic to exponential behavior of the 1P-DOS is retarded. This is one of the reasons why such exponential depletion was never seen in computer simulations.

A Method for Using Player Tracking Data in Basketball to Learn Player Skills and Predict Team Performance

Player tracking data represents a revolutionary new data source for basketball analysis, in which essentially every aspect of a player’s performance is tracked and can be analyzed numerically. We suggest a way by which this data set, when coupled with a network-style model of the offense that relates players’ skills to the team’s success at running different plays, can be used to automatically learn players’ skills and predict the performance of untested 5-man lineups in a way that accounts for the interaction between players’ respective skill sets. After developing a general analysis procedure, we present as an example a specific implementation of our method using a simplified network model. While player tracking data is not yet available in the public domain, we evaluate our model using simulated data and show that player skills can be accurately inferred by a simple statistical inference scheme. Finally, we use the model to analyze games from the 2011 playoff series between the Memphis Grizzlies and the Oklahoma City Thunder and we show that, even with a very limited data set, the model can consistently describe a player’s interactions with a given lineup based only on his performance with a different lineup.

Electrostatic tuning of the properties of disordered indium-oxide films near the superconductor-insulator transition

The evolution with carrier concentration of the electrical properties of amorphous indium oxide (InO) thin films has been studied using electronic double layer transistor configurations. Carrier variations of up to 7 X 10^(14) carriers/cm^2 were achieved using an ionic liquid as a gate dielectric. The superconductor-insulator transition was traversed and the magnitude and position of the large magnetoresistance peak found in the insulating regime were modified. The systematic variation of the magnetoresistance peak with charge concentration was found to be qualitatively consistent with a simulation based on a model involving granularity.

Non-monotonic swelling of a macroion due to correlation-induced charge inversion

It is known that a large, charged body immersed in a solution of multivalent counterions may undergo charge inversion as the counterions adsorb to its surface. We use the theory of charge inversion to examine the case of a deformable, porous macroion which may adsorb multivalent ions into its bulk to form a three-dimensional strongly-correlated liquid. This adsorption may lead to non-monotonic changes in the size of the macroion as multivalent ions are added to the solution. The macroion first shrinks as its bare charge is screened and then reswells as the adsorbed ions invert the sign of the net charge. We derive a value for the outward pressure experienced by such a macroion as a function of the ion concentration in solution. We find that for small deviations in the concentration of multivalent ions away from the neutral point (where the net charge of the body is zero), the swollen size grows parabolically with the logarithm of the ratio of multivalent ion concentration to the concentration at the neutral point.

Spatially inhomogeneous electron state deep in the extreme quantum limit of strontium titanate

When an electronic system is subjected to a sufficiently strong magnetic field that the cyclotron energy is much larger than the Fermi energy, the system enters the extreme quantum limit (EQL) and becomes susceptible to a number of instabilities. Bringing a three-dimensional electronic system deeply into the EQL can be difficult however, since it requires a small Fermi energy, large magnetic field, and low disorder. Here we present an experimental study of the EQL in lightly-doped single crystals of strontium titanate. Our experiments probe deeply into the regime where theory has long predicted an interaction-driven charge density wave or Wigner crystal state. A number of interesting features arise in the transport in this regime, including a striking re-entrant nonlinearity in the current–voltage characteristics. We discuss these features in the context of possible correlated electron states, and present an alternative picture based on magnetic-field induced puddling of electrons.