Bruno P. Falcão

Influence of the layer thickness in plasmonic gold nanoparticles produced by thermal evaporation

Metallic nanoparticles (NPs) have received recently considerable interest of photonic and photovoltaic communities. In this work, we report the optoelectronic properties of gold NPs (Au-NPs) obtained by depositing very thin gold layers on glass substrates through thermal evaporation electron-beam assisted process. The effect of mass thickness of the layer was evaluated. The polycrystalline Au-NPs, with grain sizes of 14 and 19 nm tend to be elongated in one direction as the mass thickness increase. A 2 nm layer deposited at 250°C led to the formation of Au-NPs with 10-20 nm average size, obtained by SEM images, while for a 5 nm layer the wide size elongates from 25 to 150 nm with a mean at 75 nm. In the near infrared region was observed an absorption enhancement of amorphous silicon films deposited onto the Au-NPs layers with a corresponding increase in the PL peak for the same wavelength region.

Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

We report an investigation on the morphological, structural, and optical properties of large size wurtzite GaAs nanowires, low doped with Mg, grown on GaAs(111)B and Si(111) substrates. A higher density of vertical nanowires was observed when grown upon GaAs(111)B. Very thin zinc-blende segments are observed along the axis of the nanowires with a slightly higher linear density being found on the nanowires grown on Si(111). Low temperature cathodoluminescence and photoluminescence measurements reveal an emission in the range 1.40–1.52 eV related with the spatial localization of the charge carriers at the interfaces of the two crystalline phases. Mg related emission is evidenced by cathodoluminescence performed on the GaAs epilayer. However, no direct evidence for a Mg related emission is found for the nanowires. The excitation power dependency on both peak energy and intensity of the photoluminescence gives a clear evidence for the type II nature of the radiative transitions. From the temperature dependence on the photoluminescence intensity, non-radiative de-excitation channels with different activation energies were found. The fact that the estimated energies for the escape of the electron are higher in the nanowires grown on Si(111) suggests the presence of wider zinc-blende segments.

New insights into the temperature-dependent photoluminescence of Mg-doped GaAs nanowires and epilayers

The intentional introduction of impurities in semiconductor nanowires is very important in view of device applications. Doping affects the electronic energy level structure which in the case of III–V nanowires can also be strongly influenced by the simultaneous occurrence of two polytypes, zinc-blende (ZB) and wurtzite (WZ). In this work, we report a study on GaAs nanowires with different Mg-acceptor doping levels through temperature dependent photoluminescence. A comparable investigation is presented for Mg-doped GaAs epilayers. For the later, only a band is observed which is ascribed to the involvement of the Mg acceptor due to the observed bandgap energy narrowing effect with increasing the doping level, and the temperature dependent behaviour. A different behaviour is reported for nanowires: several radiative transitions are observed whose temperature dependence follows that of bulk GaAs, in accordance with spatially indirect recombination. Although the polytypic regions mask the role of doping in nanowires it favours the charge separation required for photovoltaic applications.

Ag and Sn Nanoparticles to Enhance the Near-Infrared Absorbance of a-Si:H Thin Films

Silver (Ag) and tin (Sn) nanoparticles (NPs) were deposited by thermal evaporation onto heated glass substrates with a good control of size, shape and surface coverage. This process has the advantage of allowing the fabrication of thin-film solar cells with incorporated NPs without vacuum break, since it does not require chemical processes or post-deposition annealing. The X-ray diffraction, TEM and SEM properties are correlated with optical measurements and amorphous silicon hydrogenated (a-Si:H) films deposited on top of both types of NPs show enhanced absorbance in the near-infrared. The results are interpreted with electromagnetic modelling performed with Mie theory. A broad emission in the near-infrared region is considerably increased after covering the Ag nanoparticles with an a-Si:H layer. Such effect may be of interest for possible down-conversion mechanisms in novel photovoltaic devices.

Substrate and Mg doping effects in GaAs nanowires

Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE) on GaAs(111)B and Si(111) substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i) a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii) a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111); iii) the occurrence of a higher WZ phase fraction, in particular for growth on Si(111); iv) an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111)B; and v) a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111). Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2 /Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111) substrate is suggested.

Optical study of strained double Ge/Si quantum dot layers

In this work we studied experimentally and theoretically the emission from Ge WL and QDs. The numerical calculations give a prediction for the energy positions of the WL and QDs related emissions in accordance with the PL measurements. The experimental results show an independence of the energy position of the WL related emission of the interaction between the two deposited Ge layers whereas a shift to higher energies was observed for the dots related emission with the increase of the Si spacer thickness. Two difierent transitions (A and B) related to QDs were identifled. The temperature dependence of the intensity was investigated. No dependence of the activation energies on the Si spacer thickness was observed.