Bryan M. Barnes

Scatterfield microscopy for extending the limits of image-based optical metrology

We have developed a set of techniques, referred to as scatterfield microscopy, in which the illumination is engineered in combination with appropriately designed metrology targets to extend the limits of image-based optical metrology. Previously we reported results from samples with sub-50-nm-sized features having pitches larger than the conventional Rayleigh resolution criterion, which resulted in images having edge contrast and elements of conventional imaging. In this paper we extend these methods to targets composed of features much denser than the conventional Rayleigh resolution criterion. For these applications, a new approach is presented that uses a combination of zero-order optical response and edge-based imaging. The approach is, however, more general and a more comprehensive set of analyses using theoretical methods is presented. This analysis gives a direct measure of the ultimate size and density of features that can be measured with these optical techniques. We present both experimental results and optical simulations using different electromagnetic scattering packages to evaluate the ultimate sensitivity and extensibility of these techniques.

Fundamental limits of optical critical dimension metrology: a simulation study

This paper is a comprehensive summary and analysis of a SEMATECH funded project to study the limits of optical critical dimension scatterometry (OCD). The project was focused on two primary elements: 1) the comparison, stability, and validity of industry models and 2) a comprehensive analysis of process stacks to evaluate the ultimate sensitivity and limits of OCD. Modeling methods are a requirement for the interpretation and quantitative analysis of scatterometry data. The four models evaluated show good agreement over a range of targets and geometries for zero order specular reflection as well as higher order diffraction. A number of process stacks and geometries representing semiconductor manufacturing nodes from the 45 nm node to the 18 nm node were simulated using several measurement modalities including angle-resolved scatterometry and spectrally-resolved scatterometry, measuring various combinations of intensity and polarization. It is apparent in the results that large differences are observed between those methods that rely upon unpolarized and single polarization measurements. Using the three parameter fits and assuming that the sensitivity of scatterometry must meet the criterion that the 3σ uncertainty in the bottom dimension must be less than 2% of the linewidth, specular scatterometry solutions exist for all but the isolated lines at 18 nm node. Scatterometry does not have sufficient sensitivity for isolated and semi-isolated lines at the 18 nm node unless the measurement uses wavelengths as short as 200 nm or 150 nm and scans over large angle ranges.

Improving optical measurement uncertainty with combined multitool metrology using a Bayesian approach

Recently, there has been significant research investigating new optical technologies for dimensional metrology of features 22 nm in critical dimension and smaller. When modeling optical measurements, a library of curves is assembled through the simulation of a multidimensional parameter space. A nonlinear regression routine described in this paper is then used to identify an optimum set of parameters that yields the closest experiment-to-theory agreement. However, parametric correlation, measurement noise, and model inaccuracy all lead to measurement uncertainty in the fitting process for optical critical dimension measurements. To improve the optical measurements, other techniques such as atomic force microscopy and scanning electronic microscopy can also be used to provide supplemental a priori information. In this paper, a Bayesian statistical approach is proposed to allow the combination of different measurement techniques that are based on different physical measurements. The effect of this hybrid metrology approach will be shown to reduce the uncertainties of the parameter estimators.

Improving optical measurement accuracy using multi-technique nested uncertainties

This paper compares and contrasts different combinations of scatterfield and scatterometry optical configurations as well as introduces a new approach to embedding atomic force microscopy (AFM) or other reference metrology results directly in the uncertainty analysis and library-fitting process to reduce parametric uncertainties. We present both simulation results and experimental data demonstrating this new method, which is based on the application of a Bayesian analysis to library-based regression fitting of optical critical dimension (OCD) data. We develop the statistical methods to implement this approach of nested uncertainty analysis and give several examples, which demonstrate reduced uncertainties in the final combined measurements. The approach is also demonstrated through a combined reference metrology application using several independent measurement methods.

Optical critical dimension measurement of silicon grating targets using back focal plane scatterfield microscopy

We demonstrate optical critical dimension measurement of lines in silicon grating targets using back focal plane scatterfield icroscopy. In this technique, angle-resolved diffraction signatures are obtained from grating targets by imaging the back focal plane of a brightfield microscope that has been modified to allow selection of the angular distribution and polarization of the incident illumination. The target line profiles, including critical dimension linewidth and sidewall angle, are extracted using a scatterometry method that compares the diffraction signatures to a library of theoretical signatures. Because we use the zero-order component of the diffraction, the target features need not be resolved in order to obtain the line profile. We extracted line profiles from two series of targets with fixed pitch but varying linewidth: a subresolution 300-nm-pitch series, and a resolved 600-nm-pitch series. Linewidths of 131 nm to 139 nm were obtained, with nanometer-level sensitivity to linewidth, and a linear relationship of linewidth obtained from scatterfield microscopy to linewidth measured by scanning electron microscopy was demonstrated. Conventional images can be easily collected on the same microscope, providing a powerful tool for combining imaging metrology with scatterometry for optical critical dimension measurement.

Deep-subwavelength Nanometric Image Reconstruction using Fourier Domain Optical Normalization

Quantitative optical measurements of deep subwavelength, three-dimensional (3D), nanometric structures with sensitivity to sub-nanometer details address a ubiquitous measurement challenge. A Fourier domain normalization approach is used in the Fourier optical imaging code to simulate the full 3D scattered light field of nominally 15 nm-sized structures, accurately replicating the light field as a function of the focus position. Using the full 3D light field, nanometer scale details such as a 2 nm thin conformal oxide and nanometer topography are rigorously fitted for features less than one-thirtieth of the wavelength in size. The densely packed structures are positioned nearly an order of magnitude closer than the conventional Rayleigh resolution limit and can be measured with sub-nanometer parametric uncertainties. This approach enables a practical measurement sensitivity to size variations of only a few atoms in size using a high-throughput optical configuration with broad application in measuring nanometric structures and nanoelectronic devices.

Fourier domain optical tool normalization for quantitative parametric image reconstruction

There has been much recent work in developing advanced optical metrology methods that use imaging optics for critical dimension measurements and defect detection. Sensitivity to nanometer-scale changes has been observed when measuring critical dimensions of subwavelength 20 nm features or when imaging defects below 15 nm using angle-resolved and focus-resolved optical data. However, these methods inherently involve complex imaging optics and analysis of complicated three-dimensional electromagnetic fields. This paper develops a new approach to enable the rigorous analysis of three-dimensional, through-focus, or angle-resolved optical images. We use rigorous electromagnetic simulation with enhanced Fourier optical techniques, an approach to optical tool normalization, and statistical methods to evaluate sensitivities and uncertainties in the measurement of subwavelength three-dimensional structures.

Optical Through-Focus Technique that Differentiates Small Changes in Line Width, Line Height and Sidewall Angle for CD, Overlay, and Defect Metrology Applications

We present a new optical technique for dimensional analysis of sub 100 nm sized targets by analyzing through-focus images obtained using a conventional bright-field optical microscope. We present a method to create through-focus image maps (TFIM) using optical images, which we believe unique for a given target. Based on this we present a library matching method that enables us to determine all the dimensions of an unknown target. Differential TFIMs of two targets are distinctive for different dimensional differences and enable us to uniquely identify the dimension that is different between them. We present several supporting examples using optical simulations and experimental results. This method is expected to be applicable to a wide variety of targets and geometries.

Three-dimensional deep sub-wavelength defect detection using λ = 193 nm optical microscopy

Optical microscopy is sensitive both to arrays of nanoscale features and to their imperfections. Optimizing scattered electromagnetic field intensities from deep sub-wavelength nanometer scale structures represents an important element of optical metrology. Current, well-established optical methods used to identify defects in semiconductor patterning are in jeopardy by upcoming sub-20 nm device dimensions. A novel volumetric analysis for processing focus-resolved images of defects is presented using simulated and experimental examples. This new method allows defects as narrow as (16 ± 2) nm (k = 1) to be revealed using 193 nm light with focus and illumination conditions optimized for three-dimensional data analysis. Quantitative metrics to compare two-dimensional and three-dimensional imaging indicate possible fourfold improvements in sensitivity using these methods.

Zero-order imaging of device-sized overlay targets using scatterfield microscopy

Patterns of lines and trenches with nominal linewidths of 50 nm have been proposed for use as an overlay target appropriate for placement inside the patterned wafer die. The National Institute of Standards and Technology (NIST) Scatterfield Targets feature groupings of eight lines and/or trenches which are not resolvable using visible-wavelength bright-field microscopy. Such repetitive patterns yield zero-order images superimposed by interference effects from these finite gratings. Zero-order imaging is defined as the collection of specular reflection from periodic structures without the collection of any possible diffracted beams. As our lines and trenches are formed in different photolithographic steps, the overlay offset can be derived from the relative displacement of these zero-order responses. Modeling this phenomenon will require a thorough characterization of the transmission of light through all points in the optical path as a function of position, angle, and polarization. Linear polarization parallel and perpendicular to these lines and trenches is investigated as a possible enhancer of overlay offset measurement repeatability. In our particular case, nominally unpolarized light proved most repeatable.