Byung Chul Yeo
Korea Institute of Science and Technology
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Featured researches published by Byung Chul Yeo.
Physical Chemistry Chemical Physics | 2016
Hyun Jun Jung; Byung Chul Yeo; Kwang-Ryeol Lee; Sang Soo Han
Although silicon oxide (SiOx) nanowires (NWs) are recognized as a promising anode material for lithium-ion batteries (LIBs), a clear understanding of their lithiation mechanism has not been reported yet. We elucidate the lithiation mechanism of SiOx NWs at the atomic scale based on molecular dynamics (MD) simulations employing the ReaxFF reactive force field developed through first-principles calculations. SiOx NWs with crystalline Si (c-Si) core and amorphous SiO2 (a-SiO2) shell structures of ∼1 nm in thickness show smaller volume expansion than pristine Si NWs, as found in previous experiments. Lithiation into SiOx NWs creates two interfaces: c-Si/a-LixSi and a-LixSi/a-LiySiO2. The mobility of the latter, which is located farther toward the outside of the NW, is slower than that of the former, which is one of the reasons why the thin SiO2 layer can suppress the volume expansion of SiOx NWs during lithiation. Another reason can be found from the stress distribution, as the SiOx NWs show stress distribution different from the pristine case. Moreover, the lithiation of SiOx NWs leads to the formation of Li2O and Li4SiO4 compounds in the oxide layer, where several Li atoms (not a majority) in Li4SiO4 can escape from the compound and diffuse into the c-Si, in contrast to the Li2O case. However, Li atoms that pass through the SiO2 layer penetrate into the c-Si preferentially along the 〈110〉 or 〈112〉 direction, similar to the mechanism observed in pristine Si NWs. We expect that our comprehensive understanding of the lithiation mechanism of SiOx NWs will provide helpful guidance for the design of SiOx anodes to obtain better performing LIBs.
Journal of Physical Chemistry Letters | 2017
Kang-Seop Yun; Sung Jin Pai; Byung Chul Yeo; Kwang-Ryeol Lee; Sun-Jae Kim; Sang Soo Han
We propose the ReaxFF reactive force field as a simulation protocol for predicting the evolution of solid-electrolyte interphase (SEI) components such as gases (C2H4, CO, CO2, CH4, and C2H6), and inorganic (Li2CO3, Li2O, and LiF) and organic (ROLi and ROCO2Li: R = -CH3 or -C2H5) products that are generated by the chemical reactions between the anodes and liquid electrolytes. ReaxFF was developed from ab initio results, and a molecular dynamics simulation with ReaxFF realized the prediction of SEI formation under real experimental conditions and with a reasonable computational cost. We report the effects on SEI formation of different kinds of Si anodes (pristine Si and SiOx), of the different types and compositions of various carbonate electrolytes, and of the additives. From the results, we expect that ReaxFF will be very useful for the development of novel electrolytes or additives and for further advances in Li-ion battery technology.
ACS Applied Materials & Interfaces | 2017
Seunggi Seo; Byung Chul Yeo; Sang Soo Han; Chang Mo Yoon; Joon Young Yang; Jonggeun Yoon; Choongkeun Yoo; Ho Jin Kim; Yong Baek Lee; Su Jeong Lee; Jae Min Myoung; Han Bo Ram Lee; Woo Hee Kim; Il Kwon Oh; Hyungjun Kim
The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al2O3 thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H2O were used as the precursor and oxidant, respectively, with octadecylphosphonic acid (ODPA) as an SAM to block Al2O3 film formation. However, Al2O3 layers began to form on the ODPA SAMs after several cycles, despite reports that CH3-terminated SAMs cannot react with TMA. We showed that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al2O3 film growth. Moreover, the amount of physisorbed TMA was affected by the partial pressure. By controlling it, we developed a new AS-ALD Al2O3 process with high selectivity, which produces films of ∼60 nm thickness over 370 cycles. The successful deposition of Al2O3 thin film patterns using this process is a breakthrough technique in the field of nanotechnology.
Journal of Physical Chemistry C | 2015
K. P. S. S. Hembram; Hyun Jung Jung; Byung Chul Yeo; Sung Jin Pai; Seungchul Kim; Kwang-Ryeol Lee; Sang Soo Han
Physical Chemistry Chemical Physics | 2016
K. P. S. S. Hembram; Hyun Jung Jung; Byung Chul Yeo; Sung Jin Pai; Heon Ju Lee; Kwang-Ryeol Lee; Sang Soo Han
Journal of Physical Chemistry C | 2015
Hyun Jung Jung; Minho Lee; Byung Chul Yeo; Kwang-Ryeol Lee; Sang Soo Han
Physical Chemistry Chemical Physics | 2016
Sung Jin Pai; Byung Chul Yeo; Sang Soo Han
Journal of Physical Chemistry C | 2016
Byung Chul Yeo; Donghun Kim; Hyungjun Kim; Sang Soo Han
Chemistry of Materials | 2017
Seungwoo Song; Donghun Kim; Hyun M. Jang; Byung Chul Yeo; Sang Soo Han; Chang Soo Kim; J. F. Scott
Journal of Physical Chemistry C | 2018
Hong Woo Lee; Hyun Jung Jung; Byung Chul Yeo; Donghun Kim; Sang Soo Han